22DB Search Results

RFMA2124-2W

Contextual Info: RFMA2124-2W-P3 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 01/09/2007 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm

Contextual Info: EIM1011-4 10.7 – 11.7GHz Multi-Stage Power Amplifier UPDATED: 01/15/2008 FEATURES • • • • • 10.7– 11.7GHz Operating Frequency Range 35.5dBm Output Power @1dB Compression 27.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @each tone Pout 22dBm

plc transceiver

Abstract: NN12 P35-4775-1
Contextual Info: P35-4775-1 GaAs MMIC POWER AMPLIFIER – T/R SWITCH FOR 1.7 – 2.7GHz WIRELESS APPLICATIONS Features • No external biasing or matching components required • 22dBm Output Power • PCMCIA compatible surface mount plastic package • 10dB power level step with no

diodes V3F

Abstract: CCD 22 pin fax CCD 22 pin CS7610-KL CS7660 ITU-601 16 bit Correlated Double Sampling camera 24 pin
Contextual Info: CS7610 A Cirrus Logic Company Analog Video Signal Processor Features General Description • 8-Bit Video ADC • 10MSPS Conversion Rate • Internal Correlated Double Sampler • 22dB Digitally Controlled Gain Range • Code ’16’ Black Level Clamp •

L10061

Abstract: l8045 FTM-6112C-L8049G
Contextual Info: December 04, 2006 1.25Gbps CWDM Lever-latch SFP Transceiver For 22dB/30dB minimum link budget with monitoring function Members of FlexonTM Family ‹ Compatible with SFF-8472 Rev 9.5 ‹ Compatible with FCC 47 CFR Part 15, Class B ‹ Compatible with FDA 21 CFR 1040.10 and

Contextual Info: DATA SHEET SE5010L: 5 GHz Power Amplifier with Power Detector Applications Product Description • • The SE5010L is a 22dBm 5GHz Power amplifier for 802.11an Wireless LAN applications. DSSS 5 GHz WLAN IEEE802.11an Access Points, PCMCIA, PC cards The SE5010L offers a high level of integration for a

C 3531

Contextual Info: Advance Product Information November 2, 2001 Ka Band Low Noise Amplifier TGA1307-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 23-29 GHz Frequency Range 3.1 dB Nominal Noise Figure 28GHz 17 dB Nominal Gain OTOI > 22dBm 5V, 50 mA Self-Bias

Contextual Info: SMM5138XZ 12.7 – 15.4GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier • Conversion Gain : -13dB • Input Third Order Intercept IIP3 : +22dBm • LO-RF Isolation : 30dBc

Contextual Info: Frequency Mixer LAVI-9VH+ Typical Performance Curves Conversion Loss @ IF=170MHz Conversion Loss dB 12.0 11.4 LO = +16dBm 10.8 LO = +19dBm LO = +22dBm 10.2 9.6 9.0 8.4 7.8 7.2 6.6 6.0 150 300 450 600 750 900 1050 1200 1350 1500 RF Frequency (MHz) Conversion Loss vs. IF @ RF=845MHz

Contextual Info: Preliminary ES/SMM5141XZ 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

SYBD-22-172HP

Contextual Info: High Power Bi-Directional Coupler 50Ω 22dB Coupling Maximum Ratings DC Pass SYBD-22-172HP+ 1400 to 1750 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C DC Current 2A Permanent damage may occur if any of these limits are exceeded.

Ksc1674

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic

TG2202F

Abstract: DSA003632
Contextual Info: TG2202F TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2202F 1.9 GHz Band Attenuator PHS Digital Cordless Telephone Features Attenuation: ATT = 22dB (typ.) Control voltage: 0 V/3 V Pin Assignment (top view) Marking Weight: 0.014 g (typ.) Maximum Ratings (Ta = 25°C)

7856

Abstract: MC-7862 MC-7852 MC-7856 MC-7866 750-MHz
Contextual Info: GaAs CATV Hybrids 860MHz bandwidth, higher gain, Push-Pull Amplifiers and a significant improvement in CTB Part MC-7856 MC-7852 over silicon … plus assembly of these Bandwidth 50 – 860MHz 50 – 860MHz amplifiers is fully automated, so you're Gain 22dB @ 860MHz

SFP CML

Abstract: 1431nm GR-1089-CORE
Contextual Info: June 13, 2007 1.25Gbps CWDM Spring-latch SFP Transceiver For 22dB/30dB minimum link budget with monitoring function Members of FlexonTM Family 1040.11, Class I ‹ Compatible with ITU-T G.694.2 ‹ Compatible with ITU-T G.695 ‹ RoHS compliant Description

102433

Abstract: SNA-376
Contextual Info: SNA-376 Product Description Sirenza Microdevices’ SNA-376 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency

KSC2786

Contextual Info: KSC2786 KSC2786 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator • High Current Gain Bandwidth Product : fT=600MHz TYP. • High Power Gain : GPE=22dB at f=100MHz TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

B 1403 N

Abstract: EFM-1900 27 66 77 9
Contextual Info: EFM-1900 E-Series Surface Mount Mixer 1850 – 1980 MHz Features • • • • • LO Power +13 dBm +22dB Compression Point Surface Mount +32dBm IIP3 Up and Down converting SM-106 Package Note: Non Hermetic Package,Metal Cover. 0.800 20.32 2 Description

MAFRIN0493

Abstract: MAFRIN0332 Surface Mount Circulator
Contextual Info: RoHS Compliant Surface Mount Robust Lead Circulator 902 MHz—928 MHz MAFRIN0493 V2 Features • • • • • • Designed for RFID market 22dB Isolation typical 0.25dB Insertion Loss Low cost package 260°C Reflow Compatible RoHS* Compliant Version of the MAFRIN0332

X-3002

Contextual Info: Who1 H E W L E T T münÆ P A C K A R D Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22dBmTyp.PldB, +23 dBm TyP psat@900 MHz • 50 dB Typ. Power Control

Contextual Info: FMM5714X 37-42GHz Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 3dB Typ. High Associated Gain : Gas = 22dB ( Typ.) Wide Frequency Band : 37-42GHz High Output Power : P1dB = 20dBm ( Typ. ) @f=42GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION

Contextual Info: ES/SMM5141XZ Preliminary 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm

Contextual Info: RF6545 3.0V TO 3.6V, 2.4GHz FRONT END MODULE Features    GND NC VBAT VBAT NC Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm 15 14 13 12 11 GND 16 Tx Output Power=22dBm Integrated RF Front End Module with TX/RX switch, PA, filter, and DP2T switch. 50 single-ended

Contextual Info: RF3396 RF3396General Purpose Amplifier GENERAL PURPOSE AMPLIFIER DC to >6000MHz Operation ̈ Internally Matched Input and Output ̈ 22dB Small Signal Gain ̈ +2.0dB Noise Figure ̈ +11.5dBm Output P1dB ̈ Footprint Compatible with MicroX GND ̈ GND Features