22D7H Search Results

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards

2216H

Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.

29lv641

Contextual Info: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations

Q002

Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Contextual Info: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical

ST M29W800DT

Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE -90/12 • GENERAL DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and

EN29LV640B

Abstract: EN29LV640T EN29LV641H EN29LV641L
Contextual Info: Eon Silicon Solution Inc. Page 1/7 EN29LV640T/B VS EN29LV641H/L 64Mb FLASH SPEC COMPARISON Part No. : EN29LV640T/B Issued date : 2008 / 04 / 15 Prepared by : FAE Engineer：Sunny Tai Approval by : FAE Manager：Jason Tseng This Application Note may be revised by subsequent

MB29LV

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-3E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE 90/12 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and

marking code M19

Abstract: SA1-141 DS05 FPT-48P-M19 FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 SA127
Contextual Info: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され

sga31

Abstract: SA124 MBM29LV650UE-90 tRH10 DS05 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 Marking code M19
Contextual Info: MBM29LV650UE90/MBM29LV651UE90 データシート 生産終息品 MBM29LV650UE90/MBM29LV651UE90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

Contextual Info: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: MBM29LV652UE90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: Am29LV642D Data Sheet For new designs, S29GL128N supersedes Am29LV642D and is the factory-recommended migration path for this device. Please refer to the S29GL128N datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced

M29W800FT

Contextual Info: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access time: 55 ns, 70 ns, 90 ns (only available

Contextual Info: ADVANCED INFORMATION MX29LV640U 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 16 byte structure • One hundred twenty-eight Equal Sectors with 32K word each - Any combination of sectors can be erased with erase

Contextual Info: MX29LV640BU FEATURES 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY GENERAL FEATURES • 4,194,304 x 16 word structure • Sector Structure - 128 Equal Sectors with 32K word each • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

Contextual Info: ADVANCED INFORMATION MX29LV640BU 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 4,194,304 x 16 byte structure • One hundred twenty-eight Equal Sectors with 32K word each - Any combination of sectors can be erased with erase

AM29LV065D

Abstract: AM29LV641DHL AMD VID
Contextual Info: Migrating from Single-byte to Threebyte Device IDs Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90
Contextual Info: MBM29LV650UE90/651UE90 Data Sheet Retired Product MBM29LV650UE90/651UE90 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

l640du90r

Abstract: L640DU90RI L640DU90
Contextual Info: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control

Contextual Info: Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control

A15F6

Abstract: AM29LV641DL90
Contextual Info: ADVANCE INFORMATION Am29LV640DU/Am29LV641DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read, erase, and program operations

Contextual Info: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control