22P4H Search Results
22P4H Price and Stock
Glenair Inc 280-022P4H62MEGGAD-Sub High Density Connectors HIPER-D - RECTANGULAR CONN |
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280-022P4H62MEGGA |
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280-022P4H62MEGGA | Bulk | 5 | 1 |
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Glenair Inc 280-022P4H62MTGPAD-Sub High Density Connectors 79 MICRO CRIMP |
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280-022P4H62MTGPA | Each | 1 |
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22P4H Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 22P4H Plastic 22pin 300mil DIP Weight g 1.5 JEDEC Code – Lead Material Alloy 42 12 1 11 E 22 e1 c EIAJ Package Code DIP22-P-300-2.54 D L A1 A A2 Symbol SEATING PLANE e b1 b b2 A A1 A2 b b1 b2 c D E e e1 L Dimension in Millimeters Min Nom Max – – 4.7 |
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22P4H 22pin 300mil DIP22-P-300-2 | |
0-12V
Abstract: M62358 M62358P
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M62358P 0-12V M62358 | |
Contextual Info: MITSUBISHI LS Is M 5 M 5 1 8 7 B P , J - 1 5 ,-2 0 ,- 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These devices |
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65536-BIT 65536-WORD --A14 M5M5187BP, 20ead 500mV | |
432W6
Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
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240K6X-A 240P6Y-A 240P6Z-A 255F7F 256F7B 256F7X-A/B 256P6J-E 256P6K-E 272F7X-A/B 281S8-C 432W6 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G | |
Contextual Info: M IT S U B IS H I LSIs M5M5188BP, J-15, -20, -25 6 5 5 3 6 - B I T 1 6 3 8 4 - W O R D B Y 4 - B IT C M O S S T A T IC R A M DESCRIPTION This is family of 16384 word by 4-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These |
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M5M5188BP, M5M5188BP | |
IC sj 4558
Abstract: OF 8 pin DIP IC 1251 SJ 1848 SOT-23 HP M5194 sj 4558 HA1631
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HD74HC R18CS0003EJ0200 IC sj 4558 OF 8 pin DIP IC 1251 SJ 1848 SOT-23 HP M5194 sj 4558 HA1631 | |
Contextual Info: E=1E D • ' M IT S U B IS H I 00 1 B Ô S Ô ELEK 1 ■ MITSUBISHI <DIG!TAL ASSP> M402101BP/BWP L IN E A R T . '7 5 - / l - a J 4 X 8 CROSSPOINT SW ITCK W ITH CONTROL MEMORY DESCRIPTION The M402101BP/BWP is a semiconductor integrated circuit consisting of a 4 X 8 cross point switch capable of selecting |
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M402101BP/BWP M402101BP/BWP 100dB 110dB. D013f 402101B T-95-ll-a-l | |
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog |
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M62358P | |
em-519
Abstract: M62363FP 20P2E 16P2 24P2Q 20P2N 48P6D M62301
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20P2N M62301SP/FP M62352P/FP/GP M62353P/FP/GP 12bit 20P2E 16P4/t6P2N/ UP4/14P2N M62354P/FP/GP M62356P em-519 M62363FP 16P2 24P2Q 48P6D M62301 | |
M62358PContextual Info: MITSUBISHI<Dig.Ana.lNTERFACE> M62358P.FP 8-BIT 12CH D-A CONVERTER WITH BUFFER AMPLIFIERS PIN CONFIGURATION TOP VIEW . 22 1 R LD Œ CLK I X > DC IX CO > o IX Ao12 X K} U ZD Ao5 z a Ao4 Ol 00 ID ~a FEATURES Ao2 X ] GND I X V refL D l •A ll c h a n n e l in c lu d e s g a in c h a n g e la tc h c irc u it w ith o u tp u t |
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M62358P | |
m402101
Abstract: m402101bp M402101B
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M402101BP M402101BWP 402101B 100dB 31--J m402101 M402101B | |
Contextual Info: MITSUBISHI LSIs M5M5187BP, J-15, -20, -25 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CM0S STATIC RAM DESCRIPTION P IN This is family of 65536-word by 1-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These |
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M5M5187BP, 65536-word | |
Contextual Info: MITSUBISHI LSIs M5M5188AP, 1-25, -35, -45, -55 65536-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM D ESC R IPT IO N This is family of 16384 word by 4-bit static R A M s, fabri cated with the high-performance C M O S silicon-gate M O S process and designed for high-speed application. These |
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M5M5188AP, 65536-BIT 16384-WORD 65S36-BIT( 163S4-WORD | |
5188b
Abstract: 5M5188BP 5188BP 65536Bit
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M5M5188BP, 65536-BIT 16384-WORD 16384-w 5188BP, 5188B M5M5188BP 5M5188BP 5188BP 65536Bit | |
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M402101BPContextual Info: MITSUBISHI < DIGITAL ASSP> M402101BP 4 X 8 CROSSPOINT SWITCH WITH CONTROL MEMORY DESCRIPTION The M 402101B is a semiconductor integrated circuit con PIN CONFIGURATION TOP VIEW sisting of a 4 X 8 cross point switch capable of selecting 32 analog switches with 5 address inputs as well as 2 types of |
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M402101BP 402101B 100dB 110dB. ti54Tfl2b Q021Q37 M402101BP | |
Contextual Info: MITSUBISHI LS Is b24Tfl25 0 0 2 4 3 0 b 471 • M I T 1 M5M5188BP, J-15,-20,-25 65536-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is fam ily o f 16384-w ord by 4-bit static RAMs, fabricated w ith the high-performance CMOS silicon-gate MOS process |
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b24Tfl25 M5M5188BP, 65536-BIT 16384-WORD 16384-w 5188BP, 500mV M5M5188BP | |
R2J240
Abstract: R2J24020F 61048fp R2J24010F R2S20020 M37512 61048FP laptop battery 3 cells diagram schematic m37512 M37512 r2j24010 R2J24020
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REJ01D0001-0400 R2J240 R2J24020F 61048fp R2J24010F R2S20020 M37512 61048FP laptop battery 3 cells diagram schematic m37512 M37512 r2j24010 R2J24020 | |
jrc 2100 audio amplifier
Abstract: HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555
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M62249FP HA17431UPA M5295AP M51945AL M51945BL M51952AL M51952BL M51955AL M51955BL M51958AL jrc 2100 audio amplifier HA13166 HA17324A LM324 HA13165 M51995AFP M51995P ha13168 HA17555 equivalent HA13164A IC ha17555 | |
c5v2Contextual Info: MITSUBISHI LS Is M 5 M 5 1 8 7 B P , J - 1 5 , - 2 0 , - 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These devices |
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65536-BIT 65536-WORD M5M5187BP, 300mW 500mV 25T47 c5v2 | |
Contextual Info: MITSUBISHI LSIs M 5 M 5 1 8 7 B P , J - 1 5 , - 2 0 , - 2 5 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These |
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65536-word M5M5187BP, M5M5187BP | |
48P4B
Abstract: P/N146071 hssop 432W6 70P3S-M 10C2-C 136P6S-C 20P5A
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240K6X-A 30S1B 42S1B-A 52S1B-B 64S1B-E 124S8 135S8-F 145S8 149S8 177S8 48P4B P/N146071 hssop 432W6 70P3S-M 10C2-C 136P6S-C 20P5A | |
Contextual Info: MITSUBISHI LSI* M5M5187BP,J-15,-20,-25 6 5 5 3 6 - B IT 6 5 5 3 6 - WORD BY l-B IT C M O S STATIC RAM DESCRIPTION This is fa m ily o f 65536-word by 1-bit static RAMs, fa b ri cated w ith the high-performance CMOS silicon-gate MOS process and designed fo r high-speed application. These |
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M5M5187BP 65536-word M5M5187BP, 500mV 5187BP, | |
Contextual Info: MITSUBISHI LS Is M 5 M 5 1 8 8 B P , J - 1 5 ,-2 0 , - 2 5 65536-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION T h is is fa m ily o f 16 3 8 4 -w o rd b y 4 -b it s ta tic R A M s, fa b rica ted w ith th e and h ig h -p erform a n ce CMOS silico n-g a te M OS process |
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65536-BIT 16384-WORD 500mV M5M5188BP, | |
Contextual Info: MITSUBISHI LSIs M5M5187BP, J-15, -20, -25 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is fam ily of 65536-word by 1-bit static RAMs, fabri cated w ith the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These |
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M5M5187BP, 65536-word |