65536BIT Search Results

X76F641

Contextual Info: ISO 7816 Compatible X76F641 64K 8Kx8+32x8 Secure SerialFlash FEATURES DESCRIPTION • 64-bit Password Security —Five 64-bit Passwords for Read, Program and Reset • 8192 Byte+32 Byte Password Protected Arrays —Seperate Read Passwords —Seperate Write Passwords

100490

Contextual Info: FU JIT S U ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100490-15 MBM100490-25 J u ly 1 9 8 7 E d tio n 1 .0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100490 is fu lly decoded 6 5536-bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage applications. This device is organized as 65536 words b y one b it, and it features

Contextual Info: DS1986 PRELIMINARY 64K bit Add— Only {Button SPECIAL FEATURES COMMON {Button FEATURES • 6 5 5 36 -b its Electrically Program mable Read Only M em ory EPROM com m unicates with the econom y of one signal plus ground • Unique, fa ctory-lasered and tested 6 4 -b it registra­

Contextual Info: FUJITSU ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10490-1 5 MBM10490-25 July 1967 Edition 3.0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10490 is fu lly decoded 055 3 6 -bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage a pp li­

Contextual Info: MITSUBISHI LSIs M5M5178P,J-35,-45,-55 6 5 S 3 6 -B IT 8 1 9 2 -W O R D BY 8 -B IT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 8 1 9 2 w ord by 8-b it static RAM s, fabri­ cated w ith the high performance C M OS silicon gate MOS

Contextual Info: MITSUBISHI LSIs M 5M 5189BP, J- I S ,-2 0 ,-2 5 65S36-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 16384 w ord by 4 -b it static RAM s, fabri­ PIN CONFIGURATION (TOP VIEW) cated w ith the high-performance C M OS silicon-gate MOS

28C64 EEPROM

Abstract: 28C64 MBM28C64-25 MBM28C64 eeprom 28c64 till 111 28C64-25 eeprom 28c64-35 MBM28C64-35 at 28c64s
Contextual Info: FUJITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM M BM 28C64-25 M BM 28C64-35 S e p te m b e r T 9 8 7 E d itio n 2 .0 CMOS 8 1 9 2 x 8 ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 28C64 is a high speed 65,536 bits CMOS electrically erasable

Contextual Info: DS2506 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2506 64K bit Add-O nly Memory PIN ASSIGNMENT PR 35 • 65536 bits Electrically Program m able Read O nly Memory EPROM communicates with the econom y of one signal plus ground QE 1 NC QE 2 DATA QE 3 NC • Unique, factory-1 asered and tested 6 4 -b it registra­

Contextual Info: MITSUBISHI LS Is M 5 M 5 1 8 7 B P , J - 1 5 ,-2 0 ,- 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These devices

6SS36-BIT

Abstract: M5M5178P-35 M5M5178P-45
Contextual Info: MITSUBISHI LSIs M 5 M 5 1 7 8 P -3 5 ,-4 5 , - 5 5 6 5 5 3 6 -B IT 8 1 9 2 -WORD BY 8 -B IT CMOS STATIC RAM DESCRIPTION This is a family of 8192 word by 8-bit static RAMs, fabri­ PIN CONFIGURATION (TOP VIEW) cated with the high performance CMOS silicon gate MOS

M5M5178BP

Abstract: A7TA
Contextual Info: MITSUBISHI LS Is M5M5178BP, J,FP-15,-20 M5M5178BVP-20 65536-BIT 8192-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This is a fam ily of 8 1 9 2 -w o rd by 8 -b it static RAM s, PIN CONFIGURATION (TOP VIEW) fabricated w ith the high-performance CMOS silicon-gate MOS

M5M5178AP

Contextual Info: MITSUBISHI LSIs M5M5178AP,J,FP-20,-25 w 6 5 5 3 6 -B IT « l» 2 -W O R D BY 8-BIT CMOS STATIC RAM DESCRIPTION This is a fa m ily o f 8 1 9 2 w o rd b y 8 -b it s ta tic R A M s, fa b ri­ PIN CONFIGURATION (TOP VIEW) cated w ith the high p e rform ance CMOS s illic o n gate MOS

Contextual Info: MITSUBISHI LSIs M5M5178AP,J,FP-20,-25 65536-BIT 8 192-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION This is a fa m ily o f 8 1 9 2 w o rd b y 8 -b it s ta tic R A M s, fa b ri­ PIN CONFIGURATION (TOP VIEW) cated w ith th e high pe rform ance C M OS s illic o n gate MOS

Contextual Info: MITSUBISHI LSIs M5M5188AP, J-25, -35, -45, -55 65536-BIT 16384-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is fa m ily o f 16384 w ord by 4 -b it static RAMs, fa b ri­ PIN CONFIGURATION (TOP VIEW) cated w ith the high-performance CMOS silicon-gate MOS

EPROM MEMORY

Abstract: ic rom 2816 DS1986 DS1986-F3 DS9092 DS9093F DS9093RA DS9096P DS9101 2816b
Contextual Info: 19-4893; Rev 8/09 DS1986 64Kb Add-Only iButton www.maxim-ic.com COMMON iButton FEATURES SPECIAL FEATURES • •        65536 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground

MB74LS74A

Abstract: MB74LS161A 8265A-10 8265A 8265 RAM mb74ls161 8265a-12 74ls161 counter pin configuration
Contextual Info: F U J IT S U MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY MB 8265A -10 MB 826S A -12 MB 8265A -15 65,536-BIT D Y N A M IC RA NDO M ACCESS M EM O RY The F u jits u M B 8 2 6 5 A is a fu lly decoded, d y n a m ic random access m e m ory organized as 6 5 ,5 3 6 o n e -b it w o rd s. Th e design is o p tim iz e d fo r high speed,

AK6010A

Abstract: AK6010AF AK6012A AK6012AF
Contextual Info: ASAHI KASEI [AK6010A/12A] AK6010A / 12A I2C bus 32K / 64Kbit Serial CMOS EEPROM Features









ADVANCED CMOS EEPROM TECHNOLOGY READ/WRITE NON-VOLATILE MEMORY
 WIDE VCC OPERATION Vcc = 1.8V 5.5V AK6010A

32768 bits, 4096
8 organization

Contextual Info: b 2 4 ti a E S 0024302 f l 2b « 1 1 1 1 1 M M 5 MITSUBISHILSIs 5 1 8 B 7 P , J - 1 5 , - 2 , - 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is fam ily o f 6 5 5 3 6 -w o rd by 1-bit static R AM s, fabricated PIN CONFIGURATION (TOP VIEW)

fcb61c65l

Abstract: I/cmosh-3 tr
Contextual Info: Philips Components Data sheet status Product specification date of issue June 1990 FCB61 C65 L/LL 8 K x 8 Fast CMOS low-power static RAM FOR DETAILED INFORMATION SEE RELEVANT DATA BOOK OR DATA SHEET FEATURES GENERAL DESCRIPTION • Operating supply voltage

AT25640B

Abstract: ATMLH AT25320B-SSHL-T ATML U 030 Atmel LOT marking ATML U 010 ATML H ATML U Atmel MARKING CODE AT25320B-SSHL-B
Contextual Info: Atmel AT25320B and AT25640B SPI Serial EEPROM 32Kb 4096 x 8 and 64Kb (8192 x 8) DATASHEET Features  Serial Peripheral Interface (SPI) compatible  Supports SPI Modes 0 (0,0) and 3 (1,1)  Datasheet describes Mode 0 operation  Low-voltage and standard-voltage operation

DAP02

Abstract: dap02e
Contextual Info: ASAHI KASEI [AK6510C/12C] AK6510C / 12C SPI bus 32K/64Kbit Serial CMOS EEPROM Features … Advanced CMOS EEPROM Technology … Single Voltage Supply: 1.8V to 5.5V … AK6510C: 32Kbits; 4096 x 8 organization AK6512C: 64Kbits; 8192 x 8 organization … SPI Serial Interface Compatible

ELAP CM 72

Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Contextual Info: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3

MB7144E-W

Abstract: 7144 transistor
Contextual Info: 000100050202010000020201010101020201 PROGRAMMABLE SCHOTTKY 65536-BIT READ ONLY MEMORY F U JIT S U MB 7144E-W A p r il 1 9 8 5 E d itio n 2 .0 SCHOTTKY 65536-BIT DEAP PROM 8192 WORDS x 8 BITS The Fujitsu MB 7144-W is high speed S ch o ttky T T L electrically field program­

Contextual Info: DS1986 P R E L IM IN A R Y DALLAS DS1986 64Kbit Add—Only Touch Msmory s e m ic o n d u c to r SPECIAL FEATURES • Chip-based data carrier compactly stores information • 65536-bits Electrically Programmable Read Only Memory EPROM communicates with the economy