2205 TRANSISTOR Search Results

Contextual Info: User's Guide SNVA614B – January 2012 – Revised January 2014 AN-2205 LM25118 Evaluation Board 1 Introduction The LM25118 Evaluation Board is designed to provide the design engineer with a fully functional, Emulated Current Mode Control, buck-boost power converter to evaluate the LM25118 controller IC. The

85615 tx

Abstract: 66787 87422 MAXIM 8744 MAX2385 MAX2385EBP-T MAX2386 MAX2386EBP-T 56033 089936
Contextual Info: 19-2205; Rev 0; 10/01 KIT ATION EVALU E L B AVAILA CDMA + GPS LNA/Mixers In GPS mode, the MAX2386 LNA offers high gain and the MAX2385 features lower current consumption with lower gain. The CDMA paths of the MAX2385/MAX2386 are identical. Features ♦ Low Average Current Consumption: 4.5mA

85615 tx

Abstract: MAXIM 8744 78455 75591 87422 925681 pin diagram of 8355 Various Russian Datasheets 66787 74643
Contextual Info: 19-2205; Rev 0; 10/01 KIT ATION EVALU E L B AVAILA CDMA + GPS LNA/Mixers In GPS mode, the MAX2386 LNA offers high gain and the MAX2385 features lower current consumption with lower gain. The CDMA paths of the MAX2385/MAX2386 are identical. Features ♦ Low Average Current Consumption: 4.5mA

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

en220

Abstract: STK4182-II STK4182II STK4182 STK4101V STK4101 sanyo stk4182II stk*4182 stk4182 11 STK4182II free pdf download
Contextual Info: Ordering number: EN2205B Thick Film Hybrid IC STK4182II AF Power Amplifier Split Power Supply (45W + 45W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4182II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

STK4182II

Abstract: stk4182 50Hz sine wave filter circuit STK4182-II en2205b Stereo Power Amplifier Circuit Diagram stk*4182 STK4102II STK4182II free pdf download POP transistor power high frequency
Contextual Info: Ordering number: EN2205B Thick Film Hybrid IC STK4182II AF Power Amplifier Split Power Supply (45W + 45W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4182II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

Lautsprecher LP

Abstract: transistor DA3 307 rft lautsprecher Langwelle Scans-048 26pOL rft tgl rft relais DSAGER0002 DSAGER00028
Contextual Info: T E C H N I S C H E DO KU MEN TA TI ON Progrom m geberleil Pr T 801 Z.Nr 8721BOI—00001 . . 1 2 Bestückung und Zubehör t 1* 2.1 Beatüokung des Pr-T 801 01 (von oben linke)» Funktion 1.2.1.1. 1.2.1.2. 1.2.1*3* 1.2.1.4. 1.2.1*5. 1.2*1»S. 1.2.1.7. 1.2.1.8.

3001 transistor

Abstract: SRA2205M transistor package TO-92M
Contextual Info: SRA2205M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

viper 224

Abstract: KA3SO680RF TDA 16838 TDA16837 TDA 16836 KA5HO165R TDA16836 viper 100 TOP227 tda 2750
Contextual Info: CoolSET The coolest couple out there Control IC and Powerstage for high efficient Switched Mode Power Supply. http://www.infineon.com/coolset CoolSET™ Designing a SMPS with CoolSET™ Up until now engineers have always kept an eye on the driving factors for

SRA2205

Abstract: SRA2205M
Contextual Info: SRA2205M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

CURRENT12-3

Abstract: LAS2212 transistor 2206 LAS2205 2215 SERIES CAPACITORS 85-watt 2205 TRANSISTOR
Contextual Info: ALAMBDA LINEAR REGULATORS LAS 2200 SERIES 5 AMP, 85 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PAR AM ETER SYM BOL M A X IM U M U N ITS v ,N 40 Volts Input-Output Voltage Differential V,N-V0 37.5 Volts Input Voltage FEATURES • • •

2N706

Abstract: 2N706A 2N706B 2N706C 2N708 2N743 2N743A 2N744 2N744A 2N783
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

bu 2225

Abstract: BU208A BU 102
Contextual Info: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

motorola an569

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Rating Value Unit Vdc Collector-Emitter Voltage VCEO -45 Emitter-Base Voltage

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

transistor tt 2206

Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

EE20

Abstract: 100L 330L mA 555
Contextual Info: Aluminum Electrolytic Capacitor/FA Radial lead type Series: FA • Features Type : Discontinued A Endurance :105°C 2000 to 5000h Smaller than Series HFQ Low impedance 20 to 40 less volume than Series HFQ ■Specification -55 to + 105°C 6.3 to 63 V .DC

SY 360 05

Abstract: BT2222A 2n22 2N706 2N706A 2N706B 2N706C 2N708 2N743 2N743A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

transistor t2a

Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200

UFN320

Abstract: C1347 MOS 6509
Contextual Info: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

Contextual Info: POWER MOSFET TRANSISTORS 4 0 0 Volt, 1.8 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability UFN322 UFN323 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.