2202 TRANSISTOR Search Results

9829 A

Abstract: TARF2202 .7E8
Contextual Info: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

siemens rs 1007

Abstract: 2202 DCS-1800 PMB2201 PMB2202 nf schaltungen gilbert cell differential pair
Contextual Info: ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 1.4 - 2.5GHz PMB 2202 Version 1.2 Preliminary Data Sheet 08.97 Edition 08.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.

LM2402T

Abstract: lm2402 U12402 023p 2n5770 equivalent LM2202 P6201 CRT MONITOR SCHEMATIC DIAGRAM signal path designer
Contextual Info: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched w ith LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed for use in high resolution co lo r m onitor applica­ tions. The IC contains three high input im pedance, w ide

Contextual Info: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)

HFET-2202

Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
Contextual Info: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum

HFBR-1201

Abstract: hfbr-2201 SIECOR Fiber Optic cable HFBR-1202 HFBR-2202 transistor b 1202 RS-458 HP 2202 screw cores UNS thread HFBR2202
Contextual Info: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)

Texas Instruments GPS

Abstract: TPS2202 TPS2202IDF TPS2202IDFLE
Contextual Info: TPS2202IDF DUAL-SLOT PC CARD POWER-INTERFACE SWITCH FOR SERIAL PCMCIA CONTROLLER SLVS103 - DECEMBER 1994 DF PACKAGE TOP VIEW Fully Integrated Vqc and Vpp Switching for Dual-Slot PC Card Interface Saves PCMCIA Controller I/O Leads by Utilizing 3>Lead Serial Interface

STK4152

Abstract: STK4152II transistor 38W en220 STK4152 II 30Wmin
Contextual Info: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

bu 2225

Abstract: BU208A BU 102
Contextual Info: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

motorola an569

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Rating Value Unit Vdc Collector-Emitter Voltage VCEO -45 Emitter-Base Voltage

2n6254

Abstract: rca 2n6254 2N6371 2N6253 2n6254 rca ITT 2201 i944
Contextual Info: P ow er Transistors File N um b er HARRIS 2N6253, 2N6254, 2N6371 1077 SEMICOND SECTOR 27E D H 4302571 DDLTIhS T *HAS T - 3 3 -1 3 High-Power Silicon N-P-N Transistors For Industrial and C om m ercial Use Features: • Maxim um safe-area-of-operation curves

2C3303

Abstract: ca3725 6676 transistor transistor C200 2N6676 2CS9
Contextual Info: File Number 2N6676, 2N6677, 2N6678 HARRIS SEMICOND SECTOR 1165.1 M 3 0 S 2 7 1 D D 4 0 b 20 EfiM • HAS SbE D T ’3 3 ~ / 9 15-A Sw ItehM aX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

UFN320

Abstract: C1347 MOS 6509
Contextual Info: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.

MRF245

Abstract: MRF237 MRF221 MRF238 MRF243 MRF244 2n5591 2N6151 2N6153 MRF212
Contextual Info: TRIACs in Plastic Packages O N -ST A T E R M S C U R R E N T 25 30 0.45 Am p 4.0 Am p 8.0 Am p 10 Am p Case 29-02 TO-92 Style 12 Case 77-03 Style 5 Case 221-02 TO-220 A B Style 2 Case 90-05 Style 4 Case 221-02 T 0 -22 0 A B Style 2 M A C 10-1 2N6068 MAC92-1I

hp 4552

Abstract: O2-A2 CQFP100 PSOP24-MP0816 CLT84 gh 312 clt82xxx CQFP44 diode gp 421 PS-3306 Series
Contextual Info: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

USART 8251 interfacing with 8051 microcontroller

Abstract: full 18*16 barrel shifter design 18*16 barrel shifter design USART 8251 USART 8251 expanded block diagram 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER P4QFP100-GH-1420 interfacing 8051 with ppi USART 8251 interfacing M8490 scsi
Contextual Info: CLA90000 Series High Density CMOS Gate Arrays DS5500 ISSUE 2.0 INTRODUCTZarlinkION BENEFITS The CLA90000 family of gate arrays from Zarlink Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

microprocessors interface 8086 to 8251

Abstract: USART 8251 interfacing with 8051 microcontroller to design a full 18*16 barrel shifter design USART 8251 18*16 barrel shifter design microprocessors architecture of 8251 USART 8251 expanded block diagram cqfp100 P2QFP100-GH-1420 full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Semiconductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

TL 1838

Abstract: ITT 2222 A Mitel Semiconductor process flow to design a full 18*16 barrel shifter design pic 1840 ATS 16Mhz MITEL CLA full 18*16 barrel shifter design
Contextual Info: CLA90000 SERIES j j j j ivilTEL HIGH DENSITY CMOS GATE ARRAYS s b m Sc o n â î c t o r DS4375 - 2.0 April 1997 INTRODUCTION BENEFITS The CLA90000 family of gate arrays from Mitel Sem icon­ ductor consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million gates. This

LT8900

Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Contextual Info: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array

Micro Linear application note 34

Abstract: R7240 RF5176
Contextual Info: RF5176 Preliminary 2 3V W-CDMA POWER 1900MHZ/ 3V LINEAR POWER AMPLIFIER Typical Applications • Commercial and Consumer Systems • 3V 1920-1980MHz W-CDMA Handsets • Portable Battery-Powered Equipment 2 • Spread-Spectrum Systems Product Description 1.00

Contextual Info: RF2161 Preliminary 2 3V W-CDMA POWER 1900MHZ 3V LINEAR POWER AMPLIFIER Typical Applications • 3V 1850-1910 CDMA-2000 Handsets • Commercial and Consumer Systems • 3V 1920-1980 W-CDMA Handsets • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • Spread Spectrum Systems

Contextual Info: RF2161 Preliminary
   
    
      • 3V 1850-1910 CDMA-2000 Handsets • Commercial and Consumer Systems • 3V 1920-1980 W-CDMA Handsets • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS • Spread Spectrum Systems