2202 TRANSISTOR Search Results

transistor 2202

Abstract: transistor SMD FLO 14 gilbert cell differential pair DCS-1800 GPS05866 gilbert mixer qpsk modulator 4 to 6 GHz T2201-XV10-S1-7600 transistor bx smd
Contextual Info: ICs for Communications Mixer DC - 2.5 GHz and Vector Modulator 1.4 - 2.5 GHz PMB 2202 Version 1.0 Preliminary Specification 08.95 T2201-XV10-S1-7600 PMB 2202 Revision History: Current Version: 08.95 Previous Version: none Page Page in previous (in new Version

PRE-AMPLIFIER

Abstract: LM1202
Contextual Info: A pril 1999 LM2202 230 MHz Video Amplifier System General Description The LM 2202 is a very high frequency video a m plifier system intended for use in high resolution m onochrom e o r RGB color m onitor applications. In addition to the w ideband video a m plifier the LM 2202 contains a gated differential input black

9829 A

Abstract: TARF2202 .7E8
Contextual Info: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

siemens rs 1007

Abstract: 2202 DCS-1800 PMB2201 PMB2202 nf schaltungen gilbert cell differential pair
Contextual Info: ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 1.4 - 2.5GHz PMB 2202 Version 1.2 Preliminary Data Sheet 08.97 Edition 08.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.

Contextual Info: PMB 2202 Revision History: Previous Version: Page Page in previous (in new Version Version) Current Version: 08.95 none Subjects (major changes since last revision) Edition 08.95 This edition was realized using the software system FrameMaker . Published by Siemens AG,

Contextual Info: A580-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1814-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)225ö V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

LM2402T

Abstract: lm2402 U12402 023p 2n5770 equivalent LM2202 P6201 CRT MONITOR SCHEMATIC DIAGRAM signal path designer
Contextual Info: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched w ith LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed for use in high resolution co lo r m onitor applica­ tions. The IC contains three high input im pedance, w ide

2402 transistor

Abstract: "101016" ers 2202 1 Tektronix 2402 CS 2402
Contextual Info: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched with LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed fo r use in high resolution color m onitor a pplica­ tions. The 1C contains three high input im pedance, w ide

LM 072

Abstract: LM2402
Contextual Info: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched with LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed fo r use in high resolution color m onitor a pplica­ tions. The 1C contains three high input im pedance, w ide

Contextual Info: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)

HP3312A

Abstract: nf schaltungen DCS-1800
Contextual Info: S IE M E N S if'o I V v fn r 'o m m i in ir o t in n c IU l V / U M M M U I M V / U I I V / I I O Mixer DC - 2.5 GHz and Vector Modulator 1.4 - 2.5 GHz PMB 2202 Version 1.0 Preliminary Specification / • 08.95 T2201-XV10-S1 -7600 Edition 08.95 Ausgabe 08.95

HFET-2202

Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
Contextual Info: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum

Texas Instruments GPS

Abstract: TPS2202 TPS2202IDF TPS2202IDFLE
Contextual Info: TPS2202IDF DUAL-SLOT PC CARD POWER-INTERFACE SWITCH FOR SERIAL PCMCIA CONTROLLER SLVS103 - DECEMBER 1994 DF PACKAGE TOP VIEW Fully Integrated Vqc and Vpp Switching for Dual-Slot PC Card Interface Saves PCMCIA Controller I/O Leads by Utilizing 3>Lead Serial Interface

STK4152

Abstract: STK4152II transistor 38W en220 STK4152 II 30Wmin
Contextual Info: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

STK4152II

Abstract: en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022
Contextual Info: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

transistor 2202

Abstract: 3001 transistor 2202 TRANSISTOR SRA2202M
Contextual Info: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRA2202M

Contextual Info: SRA2202M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

Contextual Info: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRA2202M

Contextual Info: SRA2202M PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion 2. OUT • I nt erface circuit and driver circuit applicat ion Features 3. IN • Wit h built- in bias resist ors • Sim plify circuit design • Reduce a quant it y of part s and

bu 515

Abstract: BU208A Q68000-A494 Q68000-A5163 T-25 PICTURE TUBE BU 110 BU208
Contextual Info: . 2SC D • Ö235b05 QQQMÖ4Q ! ■ ISIEG BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIENGESELLSCHAF V84Ö v ~ r - 3 3 - < n BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

bu 2225

Abstract: BU208A BU 102
Contextual Info: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high