2112BIT Search Results

M39P0R1080E4

Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
Contextual Info: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)

TFBGA105

Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Contextual Info: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

TFBGA105

Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
Contextual Info: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)

MSM9889L

Abstract: MSM9888L MSM9892L MSM9893L MSM9894AL SSOP30-P-56-0
Contextual Info: FEDL9888L-9889L-01 OKI Semiconductor OKI Semiconductor MSM9888L/9889L MSM9888L/9889L FEDL9888L-9889L-01 Issue Date: Feb. 27, 2002 3V, Serial Voice Flash Memory-driving Recording and Playback IC GENERAL DESCRIPTION The MSM9888L/9889L are recording and playback ICs that are controlled by a microcontroller

R5F72543

Abstract: r5f61725 SH7724 R5F2136Can R5F72543RKBGV R5F35L83 R8A77240D500BG 2332 prom R5F70834AD80FTV R5F70835
Contextual Info: Renesas MPU & MCU General Catalog 2009.10 2009.10 Renesas MPU & MCU General Catalog Renesas MPU & MCU General Catalog RJJ01B0001-1200 2009. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 11.1 Renesas Technology www.renesas.com

TFBGA105

Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low

M58LT128HSB

Abstract: CR10 M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

m9888

Abstract: MSM9888L MSM9892L MSM9893L MSM9894AL SSOP30-P-56-0
Contextual Info: E2D0083-29-94 Pr el im GENERAL DESCRIPTION The MSM9888L/9889L are recording and playback ICs that are controlled by a microcontroller in serial mode, compress voice with the OKI ADPCM system with high tone quality, and directly store voice data in the serial voice flash momory. These ICs can operate in the range of 2.7 to 3.6

23LIST

Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

M36L0R7050U3

Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Contextual Info: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple

M58LRxxxKC

Contextual Info: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers

ML675055

Abstract: SHA256 encryption aes ic SHA-256 DES-8 iso7816 sim oki ml675055 ISO7816 CACHE MEMORY 80MHz
Contextual Info: 550-1, Higashiasakawacho, Hachioji-shi, 193-8550, Japan 2009 年 1 月 20 日 開發出了適用於刷卡機的高安全性能的 LSIML675055 搭載了支援 PCI-PED2.0 的加密技術 Oki Semiconductor 此次新開發了「ML675055」，自本日 起開始發售。OKI 將特有的 IP 群 符合刷卡機安全度評價標準

PSRAM

Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory

Contextual Info: Altera Transceiver PHY IP Core User Guide Subscribe Feedback UG-01080 2013.7.1 101 Innovation Drive San Jose, CA 95134 www.altera.com TOC-2 Contents Introduction to the Protocol-Specific and Native Transceiver PHYs.1-1 Protocol-Specific Transceiver

M58LR256K

Contextual Info: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers

M58LT128KSB

Abstract: M58LT128KST
Contextual Info: M58LT128KST M58LT128KSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: FJDL9888L-9889L-01 MSM9888L/9889L l FJDL9888L-9889L-01 OKI 電子デバイス 発行日：2002年 2月27日 MSM9888L/9889L 3Vシリアル音声Flashメモリ駆動録音再生用LSI n 概要 MSM9888L/9889Lはシリアルでマイコンから制御を行い、高音質なOKI ADPCM方式で音声を圧

R8A77343DA00BG

Abstract: R5F61725 MINI DX3 READER HEAD WIRING DIAGRAM R5F64218 R4F2113 HD6412240FA20V R8A77343DA0FBG R8A77310D333BG R8A77343DA06BG HD6417032F20V
Contextual Info: 2011.06 Renesas Microcomputer General Catalog www.renesas.com CONTENTS Lineup 3 Renesas Development Environment 5 Application Matrix 7 SuperH Family 15 V850 MCUs 59 M32R Family 76 RX Family 78 RL78 Family 96 R8C Family 112 78K MCUs 164 M16C Family 221 H8SX Family

Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

CR10

Abstract: M58LT128HSB M58LT128HST
Contextual Info: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program

R5F61725

Abstract: R5F72543 R5F72544 R5F72114 HD64F36079 R5S72625P144FPU R8A77850 MITSUBISHI E100 R5F35L83JFF m3776amch
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid