2110 Search Results

R7730

Contextual Info: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg

58628-1

Contextual Info: General Information Kit Part Number: 7-2110838-2 Description: Ultra-Fast Fully Insulated FASTON Receptacles and Tabs Kit Application: Appliance Industries, Commercial and Building Equipment, HVAC Systems, Industrial Controls, Industrial Machines, Instrumentation and Controls, Lighting Applications, Medical Equipment, Motors, Security, Test Equipment

LS013B7DH01

Abstract: d143 T transistor Zebra stripe s TSSCS lcd tv parts Zebra stripe sharp TFT LCD tv driver LCP-2110019B Industrial Devices L168 V144H
Contextual Info: No. LCP-2110019B Date 16th Aug 2010 Technical Literature For TFT-LCD Module Model No. LS013B7DH01 Notice The technical Literature is subject to change without any prior notice for the purpose of product improvement. Please contact Sharp or its representative before designing

Contextual Info: General Information Kit Part Number: 1-2110830-0 Description: Deluxe Shrouded and Unshrouded, Surface Mount and Through Hole, Dual and Single Row, Vertical and Right Angle Header and Receptacle Housing Connector Kit Application: Bar Code Scanners, Estimating / Measurement Devices, Instrumentation and Controls, Medical Equipment, Servers /

Contextual Info: General Information Kit Part Number: 6-2110838-4 Description: Pre-Insulated Parallel Splices Kit Application: HVAC Systems, Instrumentation and Controls, Lighting Applications, Motors, Panel Boxes, Power Supplies, Switchgear, Transportation Family: PLASTI-GRIP

AMP Faston terminal

Contextual Info: General Information Kit Part Number: 7-2110838-3 Description: Ultra-Fast Fully Insulated FASTON Receptacles and Tabs Kit Application: Appliance Industries, Commercial and Building Equipment, HVAC Systems, Industrial Machines, Instrumentation and Controls, Medical Equipment, Motors, Security

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

pin-to-pin replacement for HIP2500

Abstract: HS2100RH replacement for HIP2500 smd 1a 100v diode bridge CDFP4-F16 HIP2500 HS-2100RH HIP2500* replacement 4562 mosfet 8 pin ic 4562 mosfet
Contextual Info: HS-2100RH Data Sheet Radiation Hardened High Frequency Half Bridge Driver The Radiation Hardened HS-2100RH is a high frequency, 100V Half Bridge N-Channel MOSFET Driver IC, which is a functional, pin-to-pin replacement for the Intersil HIP2500 and the industry standard 2110 types. The low-side and

Contextual Info: Optoway SPS-2110WG 1 * SPS-2110WG / SPS-2110BWG / SPS-2110AWG RoHS Compliant 10 Gb/s / 10 km / 1310 nm Digital Diagnostic SFP+ LC SINGLE-MODE TRANSCEIVER

LC1 D33

Contextual Info: a Prelim inary Advanced Micro Devices A m 2110 ISDN Terminal Adapter Circuit ITAC DISTINCTIVE CHARACTERISTICS • Universal adapter for ISDN R reference point ■ ■ Support of async and sync Interfaces: X.21, X.21 bis, V.24, RS232C Automatic calling/answering with on-chip

Contextual Info: NOTES: R E V 1S I O N S 908-21103 DRAWING I . MAT E R I A L S AND F I N I S H E S : BODY CONTACT RET. RING INSULATOR THIRD -BRASS, GOLD PLATE . 0 0 0 0 3 0 M I N OVER NI C K E L -BRASS, GOLD PLATE ( . 0 0 0 0 3 0 M I N ) OVER NI C KE L -BE CU, GOLD PLATE ( . 0 0 0 0 3 0 M I N ) OVER NI C KE L

AAN-232

Contextual Info: Model XDL21-6-117 Rev C Delay Line DESCRIPTION The XDL21-6-117 is a surface mount delay line that uses a slow wave coupling structure that maximizes the amount of delay per unit area over other distributed delay structures. The XDL21-6-117 can be used in amplifier linearization applications from 2110 – 2170MHz. The XDL21-6117 is ideal for use in the main loop of feed forward and in pre-distortion

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

an2110s

Abstract: GCLH YE 1015
Contextual Info: 2110S A N 2110S Video Camera Signal P ro cessin g Circuit "h j* • « * U n it • mm A N 2110S li , f f t i / 7 f t t L i e i t ? tL fz * f * 0 S & T '- f o OB ^¿M, AGC, g f t j t f i i s e , * r > -v iiI E [s li& £ W iS L T ii' , » f « i i s ì ì t o

3933

Abstract: TFM-42MH
Contextual Info: Frequency Mixer TFM-42MH+ Typical Performance Curves Conversion Loss vs. IF @ RF=2110.1MHz Conversion Loss @ IF=30MHz 11.0 10.0 LO = +10dBm 9.7 LO = +13dBm 10.0 Conversion Loss dB Conversion Loss (dB) 10.5 LO = +16dBm 9.5 9.0 8.5 8.0 7.5 9.1 8.8 8.5 8.2

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

Hytrel

Abstract: Hytrel 94v-0 uPC 2002 smf-28 corning
Contextual Info: www.gouldfo.com T hi s i s th e N e w Po w e r of Go u l d ! 1121 Benfield Blvd., Millersville, MD 21108 Toll Free: 800-54-GOULD VOICE: 410.987.5600 FAX: 410.987.1201 EMAIL: info@gouldfo.com WEB: www.gouldfo.com Patch Cords Gould cable assemblies feature quality parts and guaranteed performance specifications.

Contextual Info: Bulletin PD-21105 12/05 303CNQ100PbF SCHOTTKY RECTIFIER 300 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Description/ Features Characteristics Values Units IF AV Rectangular 300 A VRRM 100 V 22,000 A

Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

MAMXES0050

Abstract: diode 2140
Contextual Info: MAMXES0050 E-Series Surface Mount Mixer 2110 – 2170 MHz Features • • • • SM-87 Package LO Power +7 dBm Up to +1 dBm RF Surface Mount Low Profile Note: Non Hermetic Package Description M/A-COM’s MAMXES0050 is a Low Cost, Broadband, high performance Double Balanced Mixer designed for use in high

Contextual Info: 4/22/2014 Cheesehead screw with slot - Schroff Cheesehead screw with slot Part no.: 21100-146 Features: Add to basket To bolt onto PCBs Can only be used on bottom horizontal rail. Can be used with PCB retainer B Extraction function only Can be labelled Technical information:

Contextual Info: This document was generated on 02/22/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 22-28-2110 Active KK Interconnection System 2.54mm Pitch KK® Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 11

BLF7G22LS-200

Abstract: BLF7G22L BLF7G
Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

H8S-2110B

Abstract: p-qfp100-14x14-0.50 KD 472 M "LPC I/O" addressing modes 8086 cfs 455 a Diode KD 514 FE3A H8S/2110 KD 502
Contextual Info: REJ09B0299-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2110B Group Hardware Manual