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    20N60CF Search Results

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    20N60CF Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG SPW20N60CFDFKSA1

    Trans MOSFET N-CH 650V 20.7A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW20N60CFDFKSA1)
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    Avnet Americas SPW20N60CFDFKSA1 Tube 240
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    Newark SPW20N60CFDFKSA1 Bulk 356 1
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    Rochester Electronics SPW20N60CFDFKSA1 360 1
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    Vyrian SPW20N60CFDFKSA1 7,179
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    Infineon Technologies AG SPP20N60CFDHKSA1

    Trans MOSFET N-CH 650V 20.7A 3-Pin TO-220AB Tube - Rail/Tube (Alt: SPP20N60CFDHKSA1)
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    Vyrian SPP20N60CFDHKSA1 7,706
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    Infineon Technologies AG SPA20N60CFDXKSA1

    - Rail/Tube (Alt: SPA20N60CFDXKSA1)
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    Avnet Americas SPA20N60CFDXKSA1 Tube 18 Weeks 500
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    Newark SPA20N60CFDXKSA1 Bulk 365 1
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    Rochester Electronics SPA20N60CFDXKSA1 113 1
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    Vyrian SPA20N60CFDXKSA1 9,546
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    Infineon Technologies AG SPP20N60CFDXKSA1

    - Rail/Tube (Alt: SPP20N60CFDXKSA1)
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    Avnet Americas SPP20N60CFDXKSA1 Tube 24 Weeks 500
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    Rochester Electronics SPP20N60CFDXKSA1 2,038 1
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    TME SPP20N60CFDXKSA1 46 1
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    Vyrian SPP20N60CFDXKSA1 5,530
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    Win Source Electronics SPP20N60CFDXKSA1 9,915
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    Infineon Technologies AG SPP20N60CFD

    Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-220AB Tube
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    Bristol Electronics SPP20N60CFD 62
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    Component Electronics, Inc SPP20N60CFD 11
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    Win Source Electronics SPP20N60CFD 9,839
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    20N60CF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Demands for High-efficiency Magnetics in GaN Power Electronics

    Abstract: 20n60cfd TPH3006
    Contextual Info: APEC 2014, Fort Worth, Texas, March 16-20, 2014, IS2.5.3 Demands for High-efficiency Magnetics in GaN Power Electronics Yifeng Wu, Transphorm Inc. Table of Contents 1. 1st generation 600V GaN-on-Si HEMT properties and performance 2. GaN HEMT high-frequency application examples


    Original
    5w/600v9w/600vdemands for high-efficiency magnetics in gan power electronics20n60cfd+1tph3006 PDF

    D8172

    Abstract: 20N60CFD D207 d207 infineon transistor D207 JESD22 PG-TO220-3 SP000216361 SPA20N60CFD PG-TO220-FP
    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    spa20n60cfdpg-to220fpsp00021636120n60cfd+7d8172d207d207 infineontransistor d207jesd22pg-to220-3pg-to220-fp PDF

    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp20n60cfdpg-to220-3-120n60cfdq67040-s4616 PDF

    20n60cfd

    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original
    spw20n60cfdpg-to247q67040-s461720n60cfd PDF

    20N60CFD

    Abstract: SPW20N60CFD TP001
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


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    spw20n60cfdpg-to247q67040-s461720n60cfd+1tp001 PDF

    20n60cfd

    Abstract: PG-TO-220-3-1 SPP20N60CFD
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp20n60cfdpg-to220q67040-s461620n60cfd+1pg-to-220-3-1 PDF

    20N60CFD

    Abstract: 20n60c SPI20N60CFD SPP20N60CFD ultra low idss
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO262 • Periodic avalanche rated • Extreme dv/dt rated


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    spi20n60cfdpg-to26220n60cfd20n60c+2spp20n60cfdultra low idss PDF

    DF 331 TRANSISTOR

    Abstract: d207
    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 " I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


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    spa20n60cfdpg-to220-3-31sp00021636120n60cfd+2df 331 transistord207 PDF

    20n60cfd

    Abstract: Q67040-S4617 SPW20N60CFD DSA003761 20N60CF
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original
    spw20n60cfdp-to247q67040-s461720n60cfd+2dsa00376120n60cf PDF

    20n60cfd

    Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original
    spa20n60cfdpg-to220-3-31sp00021636120n60cfd+4d8172jesd22transistor d207d207 PDF

    d207

    Abstract: 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon
    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original
    spa20n60cfdpg-to220-3-31sp00021636120n60cfd+4d207df 331 transistorjesd22d207 infineon PDF

    20n60cfd

    Abstract: d207 infineon TRANSISTOR D131 D131 transistor D207 F207 diode SPA20N60CFD
    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω ID 8.3 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original
    spa20n60cfdpg-to220-3-31sp00007961320n60cfd+5d207 infineontransistor d131d131 transistord207f207 diode PDF

    20N60CFD

    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp20n60cfdpg-to220-3-1q67040-s461620n60cfd PDF

    D8172

    Abstract: 20n60cfd 20n60cf D207 F 207 diode
    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 W ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original
    spa20n60cfdpg-to220-3-31sp00021636120n60cfd+4d817220n60cfd207f 207 diode PDF

    Contextual Info: 20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode VDS 600 V RDS on ,max 0.22 9 ID1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge


    Original
    spa20n60cfdpg-to220-3-31sp00021636120n60cfd PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    20n60cfd

    Abstract: SPP20N60CFD 20n60c
    Contextual Info: 20N60CFD Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp20n60cfdp-to220-3-1q67040-s461620n60cfd+120n60c PDF

    20N60CFD

    Abstract: TP001 SPW20N60CFD 20n60c 207a Q67040-S4617
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original
    spw20n60cfdpg-to247q67040-s461720n60cfd+3tp00120n60c207a PDF

    20n60cfd

    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original
    spw20n60cfdpg-to247q67040-s461720n60cfd PDF

    20n60cfd

    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp20n60cfdpg-to220-3-120n60cfdq67040-s4616 PDF

    20n60cfd

    Abstract: SPW20N60CFD
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original
    spw20n60cfdpg-to247q67040-s461720n60cfd+1009-134-a PDF

    20n60cfd

    Abstract: spp20N60CFD 20n60cf PG-TO-220-3-1 Q67040-S4616
    Contextual Info: 20N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.22 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spp20n60cfdpg-to220q67040-s461620n60cfd+220n60cfpg-to-220-3-1 PDF