2048X256 Search Results

Contextual Info: TOSHIBA TC55V040FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V040FT/TR is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7

a6628

Abstract: A-6628 cewe DIP32 MSM548512L
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

V9990

Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
Contextual Info: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.

Contextual Info: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16

M5M4V16S30DTP

Abstract: M5M4V16S40 M5M4V16s30
Contextual Info: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)

HM65

Abstract: DP-32 HM658512A HM658512ALFP-7 HM658512ALFP-8 HM658512ALP-10 HM658512ALP-10V HM658512ALP-7 HM658512ALP-7V HM658512ALP-8
Contextual Info: HM658512A Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Apr. 20, 1995 The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS

Contextual Info: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16

1000fps

Abstract: TDI ccd sensor tdi ccd 512 CCD160-250-SFT Sarnoff TDI CCD ccd sensor back illuminated 160-250-SFT high speed CCD sensor sarnoff ccd
Contextual Info: CCD160-250-SFT 2048 x 256 High-Performance CCD Sensor Text Text TExt sensor For unparalleled performance, the high speed, high sensitivity CCD 160-250-SFT generates clear images in real time. The Sarnoff CCD 160-256-SFT imager is a back-illuminated CCD array

HM658512LP-10

Abstract: hm658512lp HM658512LP-12 HM658512LP10 HM658512 NS16032 HM658512lfp HM658512LFP-10
Contextual Info: H T ACHI/ LOGIC/ARRAYS/MEM SIE D MMIhEOa G 0 1 fl2 GQ S Û T • H I T 2 HM658512 S e rie s -52 4,28 8-W o rd x 8 -B it H ig h S p e e d P s e u d o S ta tic R A M Features • Single 5 V ± 10% • Highspeed Access time 51 access t im e .80/100/120 ns

um1a

Contextual Info: TOSHIBA TC59S6432CFT/CFTL-54,-60r70,-80,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-W O R D S X 4B A N K S X 32-B ITS SYNCHRONOUS D YN A M IC RAM DESCRIPTION TC59S6432CFT/CFTL i s a CMOS s y n c h r o n o u s d y n a m i c r a n d o m a c c e s s m e m o r y o r g a n i z e d a s 524,288words X 4 banks X 32 bits. Fully synchronous operations are referenced to the positive edges of clock

a6628

Abstract: SOP-112 DIP32 MSM548512L DIP32P
Contextual Info: J2L0044-17-Y1 作成：1998年 1月 MSM548512L l 前回作成：1997年 9月 ¡ 電子デバイス MSM548512L 524,288-Wordx8-Bit PSRAM n 概要 プロセスを

HM65W8512

Abstract: HM65W8512LFP-12 HM65W8512LFP-12V HM65W8512LFP-15 HM65W8512LFP-15V HM65W8512LRR-12 HM65W8512LTT-12 HM65W8512LTT-12V HM65W8512LTT-15 HM65W8512LTT-15V
Contextual Info: ADE-203-289B Z HM65W8512 Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Dec. 9, 1994 The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 524288-word × 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm HiCMOS process technology.

TC59S1616

Abstract: TC59S1616AFT TC59S1608AF
Contextual Info: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM

i8088

Abstract: Z80 INTERFACE lcd display SED1351FOA 351FLB SED1351F0A
Contextual Info: SEDI 351 GRAPHICS LCD CONTROLLER DESCRIPTION The SED1351F is a graphics LCD controller capable of controlling medium to large resolution displays. It transfers data from MPU to external frame buffer RAM and converts this data to display signals for LCD drivers. The SED1351F can display images with 4 gray shades and support display duty cycle as high as 1/

p22v10

Abstract: MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10
Contextual Info: Order Number: MCF5206eAN/D Rev. 1, 6/2001 Semiconductor Products Sector Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick Motorola Ltd., East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than

p22v10

Abstract: AN2006 MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 P00001 palasm
Contextual Info: Order Number: AN2006 Rev. 1, 6/2001 Freescale Semiconductor, Inc. Freescale Semiconductor Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than

Contextual Info: TC518512FL 1/2 IL00 * C-MOS 524,288WORDX8 BIT STATIC RAM -TOP VIEW12 A18 IN 1 VDD(+5V) 32 11 10 A16 31 A15 IN 2 IN 9 8 30 A17 IN A14 IN 3 7 6 A12 IN 4 29 R/W A7 IN 5 28 A13 IN 5 27 26 23 A6 IN 6 27 A8 IN 25 IN 7 26 A9 IN 28 A4 IN 8 25 A11 IN 31 4

p22v10

Abstract: palasm ba date sheet MCF5307 MT48LC1M16A1 PAL22V10 PALLV22V10 asynchronous dram
Contextual Info: Freescale Semiconductor, Inc. Order Number: MCF5206eAN/D Rev. 1, 6/2001 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note Interfacing the ColdFire MCF5206e to a 1 Mbit x 16 SDRAM Nigel Dick Motorola Ltd., East Kilbride, Scotland

EM636165TS Rev.4

Abstract: cke 2009 EM636165TS-6 em636165ts EM636165TS-7 EM636165 EM636165TS-5
Contextual Info: EtronTech EM636165TS 1M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • • Fast access time: 4.5/5.4/5.4ns Fast clock rate: 200/166/143 MHz Self refresh mode: standard Internal pipelined architecture

Contextual Info: AS4C1M16S 1M x 16 bit Synchronous DRAM SDRAM Alliance Confidential Overview Features • • • • • • • • • • • • • The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16

TC518512FTL

Abstract: TC518512 TC518512PL
Contextual Info: TOSHIBA T C 5 1 8 5 1 2 P I7 F L / F T L / T R L r 7 0 / 8 0 / 1 0 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes

TC518512

Abstract: transistor D195
Contextual Info: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er

MCF5307

Abstract: MT48LC1M16A1 P22V10 PAL22V10 PALLV22V10
Contextual Info: Order Number: AN2006/D Rev. 0, 7/2000 Semiconductor Products Sector Application Note Interfacing the ColdFire¨ MCF5206e to a 16-Mbyte SDRAM Nigel Dick Netcomm Applications Group Motorola Ltd., East Kilbride, Scotland Due to advances in technology, synchronous DRAMs offer higher speeds, density, and performance than

EM636165

Abstract: EM636165TS
Contextual Info: EtronTech EM636165 1M x 16 bit Synchronous DRAM SDRAM Etron Confidential (Rev.3.6, Feb. /2009) Features • • • • • • • • • • • • • • Overview Fast access time: 5/5/5.5/5.5 ns Fast clock rate: 183/166/143 MHz Self refresh mode: standard and low power