202FH Search Results

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

variable time delay circuit using 8085

Abstract: STC 80C51
Contextual Info: H Preliminary Advanced Micro Devices Am2085 ISDN Subscriber Access Controller ISAC-S DISTINCTIVE CHARACTERISTICS • S-Bus transceiver according to CCITT 1.430 ■ Recovery of clock and frame ■ Frame alignment for trunk line termination ■ Access to Echo bit

Contextual Info: in te i 8XC196KD/8XC196KD20 COMMERCIAL CHMOS MICROCONTROLLER 87C196KD—32 Kbytes of On-Chip OTPROM • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 16 MHz and 20 MHz Available 1000 Byte Register RAM Register-to-Register Architecture 28 Interrupt Sources/16 Vectors

Contextual Info: in tj, 8XC196KC/8XC196KC20 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KC—16 Kbytes of On-Chip OTPROM 83C196KC—16 Kbytes ROM 80C196KC—ROMIess • 16 and 20 MHz Available ■ Dynamically Configurable 8-Bit or 16-Bit Buswidth ■ 488 Byte Register RAM

Contextual Info: irrte* P K 1IL O IM IO K 1 Ä K V 8XC196K C /8XC 196KC20 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 87C196KC— 16 Kbytes of On-Chip OTPROM 83C196KC— 16 Kbytes ROM 80C196KC—ROMIess 16 and 20 MHz Available • Dynamically Configurable 8-Bit or 488 Byte Register RAM

Contextual Info: intei IP H g y M O IM D f t f 8XC196KB/8XC196KB16 COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER 8 Kbytes of On-Chip ROM/OTP Available Dynamically Configurable 8-Bit or 16-Bit Buswidth 232 Byte Register File Full Duplex Serial Port Register-to-Register Architecture

8098 instruction

Abstract: intel 8098 c8798
Contextual Info: P K iy iM IO K IÄ IS V intel MCS -96 8098/8398/8798 ADVANCED 8-BIT MICROCONTROLLER WITH 16-BIT CPU • 8398: an 8098 with 8K Bytes of On-Chip ROM ■ 232 Byte Register File ■ Full Duplex Serial Port ■ Register-to-Register Architecture ■ Dedicated Baud Rate Generator

Contextual Info: in te l 8XC196MC INDUSTRIAL MOTOR CONTROL MICROCONTROLLER 87C196MC 16 Kbytes of On-Chip OTPROM* 83C196MC 16 Kbytes of On-Chip ROM High Performance CHMOS 16-Bit CPU 16 Kbytes of On-Chip OTPROM/ROM 488 bytes of On-Chip Register RAM Register to Register Architecture

M80C196KC

Contextual Info: ^ iH @ p y T ^ E W a E W in te i M87C196KD MILITARY CHMOS MICROCONTROLLER M87C196KD—32 Kbytes of On-Chip EPROM 16 MHz Available Full Duplex Serial Port 32 KBytes On-Chip EPROM High Speed I/O Subsystem 1000 Byte Register RAM 16-Bit Timer Register-to-Register Architecture

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

80C196MD

Abstract: mcs 96 programming 83C196MD 87C196MD 8XC196MD PX29
Contextual Info: 8XC196MD INDUSTRIAL MOTOR CONTROL MICROCONTROLLER 87C196MD 16 Kbytes of On-Chip OTPROM* 87C196MD, ROM 16 Kbytes of On-Chip Factory-Programmed OTPROM 80C196MD ROMless ▀ ▀ High-Performance CHMOS 16-Bit CPU 16 Kbytes of On-Chip OTPROM/ Factory-Programmed OTPROM

INTEL Packaging Handbook

Abstract: 80C196MC N87C196 G1314 intel packaging handbook 240800 -20/intel packaging handbook 240800 V/intel packaging handbook 240800
Contextual Info: INTEL CORP UP/PRPHLS bôE D • 4fl2bl75 G 1 3 m ? l 515 ■ ITL1 PDBm LG W AG ^ in te l 8XC196MC INDUSTRIAL MOTOR CONTROL MICROCONTROLLER 87C196MC 16 Kbytes of On-Chip OTPROM* 83C196MC 16 Kbytes of On-Chip ROM High Performance CHMOS 16-Bit CPU 16 Kbytes of On-Chip OTPROM/ROM

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

8XC196KC Users manual

Abstract: 8XC196KC/KD complete users manual 8XC196KC/KD MCS-96 mcs 96 programming 8XC196KC/kd users manual MCS-96 development 8XC196KD users manual 8XC196KB Users manual 8XC196KC instructions
Contextual Info: AP-714 APPLICATION NOTE Converting from the 8XC196KB KC KD to the 8XC196Nx Family JENNIE ABELLA APPLICATIONS ENGINEER July 1995 Order Number 272625-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in

RRQ2

Abstract: AD10 AD11 AD12 CRC-10 CRC-32 3583H "network interface cards"
Contextual Info: ICs for Communications Segmentation and Reassembly Element SARE PXB 4110 Version 1.1 Preliminary Data Sheet 01.97 T4110-XV11-P2-7600 PXB 4110 Revision History: Current Version: 01.97 Previous Version: Preliminary Data Sheet 08.95 Version 1.1 Page (in previous

80C196KC

Abstract: 80C196KC Users Guide 87C196KC user manual 80C196KC20 8xC196 8XC196KC20 intel 80C196kb 80C196KB 83C196KC 87C196KC
Contextual Info: 8XC196KC 8XC196KC20 COMMERCIAL EXPRESS CHMOS MICROCONTROLLER Y 87C196KC 83C196KC 80C196KC 16 and 20 MHz Available 16 Kbytes of On-Chip OTPROM 16 Kbytes ROM ROMless Y Dynamically Configurable 8-Bit or 16-Bit Buswidth Y 488 Byte Register RAM Register-to-Register Architecture

BA258

Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

samsung electronics ba41

Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

NS064N

Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70