2018 Search Results

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

2SC3773

Abstract: SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band

FI-SE20M

Contextual Info: LDI8203A-15 P R IN T ED > l» W IRIN G BOAEDJ fl/Y SEE DETAIL I IN TER FAC E CONNECTOR CN1!20186-20E-13 1-PEX PIN LAYOUT RCLKIN- RCLKIN+ CORRESPONDING CONNECTOR:FI-SE20M(FPC J ' ^ T «Sf ENLARGED DETAIL A a), F I—S20S (WI BEZEL/DI SPLAY POSITION ENLARGED

Contextual Info: PFDF Resettable Fuses www.schurter.com/PG01_1 Surface Mount Fuse, PTC, 2018 footprint, 5.1 x 4.6 mm, 60 VDC 60.0 VDC • 0.55 A Description Applications - Directly solderable on printed circuit boards - Power Over Ethernet IEEE 802.3 af port protection

2sc3807

Contextual Info: Órdering number: EN 2018A I No.*20IBA _ 2 S C 5 8 0 7 NPN Epitaxial Planar S i l i c o n Tr an si st or Iig h hFEi Frequency, G e n e r a l - 'urp os e Amp A p p l i c a t i o n s Low Applications . Low frequency general-purpose amplifiers, drivers

Contextual Info: PART NO. NO. OFPOS 20188-020-* ^ ^ 20P y/ “ 030- n 30P // ” 040” ,l 40P // -050- " 50P // -060- " 60P // ” 080~ H 80P // -100- " 100P A 11.43 17.78 24.13 30.48 36.83 49.53 62.23 B 20.32 26.67 33.02 39.37 45.72 58.42 71.12 C 24.80 31.15 37.50 43.85

Contextual Info: _ I_ 02 03 04 30 o 01 in GEN. ST. 07 08 OD 50 60 70 60 REV. 90 43 44 45 46 48 56 70 72 73 75 76 81 82 83 CO 10 11 12 13 14 18 20 31 32 33 3 4 138 39 40 IN T. ST. I d ,201843,573,00 o B S ,C DATE D E S C R IP T I ON BY C 'K ’D '

Contextual Info: VSMP Series 0603, 0805, 1206, 1506, 2010, 2018, 2512 (Z-Foil) Vishay Foil Resistors Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of ± 0.05 ppm/°C and Power Coefficient of 5 ppm at Rated Power and Load Life Stability of ± 0.005 % (50 ppm)

EN2516

Abstract: 2SB1935 2SB1295 2SB193
Contextual Info: Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2018A

2SA1256

Abstract: ITR03107 ITR03108 ITR03109
Contextual Info: Ordering number:ENN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators, converters, and IF amplifiers. unit:mm 2018B [2SA1256]

Leoco 2018

Abstract: 2065 Leoco 2028 Leoco UL94-V1
Contextual Info: 2065/2066/2065T Series Features ◆2065 & 2066 Housing: 2065 Available in 2 through 30 circuits 2066 Available in 4 through 44 circuits Material:PPO UL94V-1 Color: Black Accepts Leoco 2065 crimp terminal Mates with Leoco 2018 and 2028 header ◆2065 Terminal:

Contextual Info: fax id: 2018 CYM1846 512K x 32 Static RAM Module Features • H ig h -d e n s ity 16 -m e g a b it S R A M m o d u le • 32 -b it stand ard fo o tp rin t su p p o rts from 16K x32 th ro ug h 1M x32 • H ig h -s p e ed S R A M s — A c ce ss tim e o f 12 ns

Contextual Info: Ordering number : ENN7509 30A01C 30A01C PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2018B Features • • 0.4 0.5 •

Contextual Info: Instruction Sheet Small Form-Factor Pluggable SFP + 408-10261 Seating Tool Kits 2018280-[ ] for Stacked PT Connector and Cage Assemblies 04 FEB 09 Rev A Seating Tool Kit 2018280-1 Shown Back Seating Tool Bottomed on Cage Assembly  2 1 SFP+ Stacked PT Connector

Contextual Info: PFDF Resettable Fuses www.schurter.com/pg01_1 Surface Mount Fuse, PTC, 2018 footprint, 5.1 x 4.6 mm, 60 VDC 60.0 VDC • 0.55 A Description Applications - Directly solderable on printed circuit boards - Power Over Ethernet IEEE 802.3 af port protection

Electronic Designs bav99

Abstract: BQ2018 BAV99 BZX84C5V6 SST108 movlw
Contextual Info: Designed ttoo GO Designed GO . . . Practical and Cost-Effective Battery Management Design Examples by Benchmarq Series 2018, Number One Universal Battery Monitor Using the 2018 Power Minder IC Features ◆ Counts charge and discharge for Li-Ion, NiCd,

PolySwitch SMD

Abstract: SMD transistor Marking X1 marking A10 smd transistor marking A10 SMD Marking X1 polyswitch 100 smd a10 308 smd marking smd marking CA SMD100-2018
Contextual Info: Tyco / Electronics Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: SMD100-2018 PolySwitch PTC Devices DOCUMENT: SCD 22562 PCN: 483593 REV LETTER: E REV DATE: APRIL 11, 2002 PAGE NO.: 1 OF 1

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

Contextual Info: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP

IC 1820

Contextual Info: ERICSSON ^ PTB 20180 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor D escription The 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP

Contextual Info: SANYO SEMI CONDUCTOR 2SA1342, 2SC3396 CORP 2EE D • TTTTOTb 0007324 T ■ r~ 3 i~ i3 ” P N P /N PN Epitaxial Planar Silicon Transistors 2018a Switching Applications with Bias Resistances R1=22kO, R2=22kO 1234C Applications • Switchïng circuit, ¡averter circuit, interface circuit, driver circuit.

Contextual Info: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage

Contextual Info: SANYO S E M I C ON DU C T OR CORP E2E D 7 ‘n 7 0 7 b 2SA1510, 2SC3900 000733b S I T -3 7 - f3 " T - 3 5 -// P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=4.7ki2 2104A Applications . Switching circuits, inverter circuits, interface circuits, driver circuits

oz 2062

Abstract: 10001C
Contextual Info: Torson 0.050" 1.27mm 20-5016-2XXX-20-001 – Receptacle - Right Angle No. of Positions Part Number 20 5016 2004 20 001 A 4 1 2006 6 2 2008 8 3 2010 10 4 2012 12 5 2014 14 6 2016 16 7 2018 18 8 2020 20 9 2022 22 10 2024 24 11 2026 26 12 2028 28 13 2030 30 14