200V 10A Search Results

200V 10A Result Highlights (5)

Part	Manufacturer	Description
INA148UA/2K5	Texas Instruments	+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
INA148UA/2K5G4	Texas Instruments	+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
INA148UA	Texas Instruments	+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
INA148UAG4	Texas Instruments	+-200V Common-Mode Voltage Difference Amplifier 8-SOIC -55 to 125
INA148QDRQ1	Texas Instruments	Automotive +-200V Common-Mode Voltage Difference Amplifier 8-SOIC -40 to 125

200V 10A Price and Stock

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Bourns Inc


Bourns Inc BSDW20G120C2 SiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BSDW20G120C2	Tube	50		50	1 - 10 - 100 $4.81 1000 $4.75 10000 $4.75	Buy Now
Bourns Inc BSDH10G120E2 SiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	BSDH10G120E2	Tube	50		50	1 - 10 - 100 $2.38 1000 $2.38 10000 $2.38	Buy Now

200V 10A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CEPF630 Abstract: CEFF630 CEBF630 Contextual Info: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	CEPF630/CEBF630 CEFF630 CEPF630 CEBF630 O-263 O-220 O-220F O-220/263 CEPF630 CEFF630 CEBF630	PDF
FSF9250R4 Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,	Original	JANSR2N7404 FSF9250R4 -200V, R2N74 FSF9250R4 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET	PDF
Rad Hard in Fairchild for MOSFET Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440	Original	JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss	PDF
1E14 Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460	Original	JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR	PDF
NTE2549 Contextual Info: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2549 NTE2549	PDF
NTE2549 Contextual Info: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2549 NTE2549	PDF
IRF P CHANNEL MOSFET 200V 20A Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω	Original	RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252	PDF
200V transistor npn 2a Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A Contextual Info: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V	Original	NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A	PDF
1E14 Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R Rad Hard in Fairchild for MOSFET Contextual Info: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 0D, FSJ26 0R /Subjec t (44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (44A, 200V, 0.050	Original	FSJ260D, FSJ260R FSJ26 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R Rad Hard in Fairchild for MOSFET	PDF
MIL-PRF-28800F Abstract: fuse 10KA Wavetek fuse 10a 100ka Ct232 HD110B HV-231-10 CT236 0-30V HD115B Contextual Info: AC & DC Voltage Ranges 200mV, 2V, 20V, 200V, 1500VDC/1000AC DC Accuracy ±0.1% rdg, ±2dgt AC Accuracy 200mV – ±0.8% rdg, ±4dgt @ 40-500Hz 200V 1000V – ±0.8% rdg, ±4dgt (@50Hz, 60Hz) 200mV-20V – ±1.5% rdg, ±5dgt (@500Hz-5kHz) 200V – ±1.5% rdg, ±5dgt (@500Hz-2kHz)	Original	200mV, 1500VDC/1000AC 200mV 40-500Hz) 200mV-20V 500Hz-5kHz) 500Hz-2kHz) 60Hz-500Hz) 1500VDC 200mA, MIL-PRF-28800F fuse 10KA Wavetek fuse 10a 100ka Ct232 HD110B HV-231-10 CT236 0-30V HD115B	PDF
CEPF640 Abstract: CEBF640 CEFF640 Contextual Info: CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D	Original	CEPF640/CEBF640 CEFF640 CEPF640 CEBF640 O-220 O-263 O-220F O-263 CEPF640 CEBF640 CEFF640	PDF
CEPF640 Abstract: CEBF640 CEFF640 AA-76 Contextual Info: CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D	Original	CEPF640/CEBF640 CEFF640 CEPF640 CEBF640 O-220 O-263 O-220F O-263 CEPF640 CEBF640 CEFF640 AA-76	PDF
f20up20dn Abstract: power Diode 200V 10A f20up20dn FFB20UP20DN power Diode 200V 10A Contextual Info: FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers tm Features Description High Reverse Voltage : VRRM = 200V The FFB20UP20DN is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar construction.	Original	FFB20UP20DN FFB20UP20DN f20up20dn power Diode 200V 10A f20up20dn power Diode 200V 10A	PDF
Contextual Info: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description	Original	PD-97808 RDHB710SE20A2SX RDHB710SE20A2SX MIL-PRF-38534	PDF

f20up20dn Abstract: power Diode 200V 10A f20up20dn FFB20UP20DN F20UP Contextual Info: FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers tm Features Description High Reverse Voltage : VRRM = 200V The FFB20UP20DN_F085 is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFB20UP20DN f20up20dn power Diode 200V 10A f20up20dn F20UP	PDF
IRFP9240 Abstract: TA17522 irfp9243 Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate	OCR Scan	IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. RFP9240, RFP9241, RFP9242, IRFP9240 TA17522 irfp9243	PDF
irfp9240 Contextual Info: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate	OCR Scan	IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, -150V RFP9240, irfp9240	PDF
Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.	Original	RCD100N20 182mW SC-63) OT-428> C10N20 R1102A	PDF
Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.	Original	RCD100N20 182mW SC-63) OT-428> C10N20 R1102A	PDF
Contextual Info: HY18N20D 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,	Original	HY18N20D O-252 2002/95/EC O-252 MIL-STD-750 18N20D 250mA	PDF
Contextual Info: HY18N20T 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,	Original	HY18N20T O-220AB 2002/95/EC O-220AB MIL-STD-750 18N20T 50PCS/TUBE	PDF
irfp9240 Abstract: IRFP9243 Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate	Original	IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. 199st irfp9240 IRFP9243	PDF
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	JANSR2N7396 FSL230R4	PDF
Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	JANSR2N7404 FSF9250R4 -200V,	PDF

200V 10A Search Results

200V 10A Result Highlights (5)

200V 10A Price and Stock

Bourns Inc BSDW20G120C2

Bourns Inc BSDH10G120E2

200V 10A Datasheets Context Search

CEPF630

FSF9250R4

Rad Hard in Fairchild for MOSFET

1E14

NTE2549

NTE2549

IRF P CHANNEL MOSFET 200V 20A

200V transistor npn 2a

1E14

MIL-PRF-28800F

CEPF640

CEPF640

f20up20dn

f20up20dn

IRFP9240

irfp9240

irfp9240