200V 10A Search Results

CEPF630

Abstract: CEFF630 CEBF630
Contextual Info: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).

FSF9250R4

Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440

1E14

Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460

NTE2549

Contextual Info: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE2549

Contextual Info: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

200V transistor npn 2a

Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
Contextual Info: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

1E14

Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 0D, FSJ26 0R /Subjec t (44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (44A, 200V, 0.050

MIL-PRF-28800F

Abstract: fuse 10KA Wavetek fuse 10a 100ka Ct232 HD110B HV-231-10 CT236 0-30V HD115B
Contextual Info: AC & DC Voltage Ranges 200mV, 2V, 20V, 200V, 1500VDC/1000AC DC Accuracy ±0.1% rdg, ±2dgt AC Accuracy 200mV – ±0.8% rdg, ±4dgt @ 40-500Hz 200V 1000V – ±0.8% rdg, ±4dgt (@50Hz, 60Hz) 200mV-20V – ±1.5% rdg, ±5dgt (@500Hz-5kHz) 200V – ±1.5% rdg, ±5dgt (@500Hz-2kHz)

CEPF640

Abstract: CEBF640 CEFF640
Contextual Info: CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D

CEPF640

Abstract: CEBF640 CEFF640 AA-76
Contextual Info: CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D

f20up20dn

Abstract: power Diode 200V 10A f20up20dn FFB20UP20DN power Diode 200V 10A
Contextual Info: FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers tm Features Description „ High Reverse Voltage : VRRM = 200V The FFB20UP20DN is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar construction.

Contextual Info: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description

f20up20dn

Abstract: power Diode 200V 10A f20up20dn FFB20UP20DN F20UP
Contextual Info: FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers tm Features Description „ High Reverse Voltage : VRRM = 200V The FFB20UP20DN_F085 is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ion-implanted epitaxial planar construction.

IRFP9240

Abstract: TA17522 irfp9243
Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate

irfp9240

Contextual Info: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Contextual Info: HY18N20D 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,

Contextual Info: HY18N20T 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,

irfp9240

Abstract: IRFP9243
Contextual Info: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate

Contextual Info: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs