200V 10A Search Results

Contextual Info: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D10LC20U 200V 10A r n y 't'X >trr35ns >SRS;H >^BsOAw0, ^ m iB s F A RATINGS Absolute Maximum Ratings a i s E-fSymbol Conditions a Item Storage Temperature Operating Junction Temperature

Contextual Info: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2000 File Number 5009 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB)

AN1001

Abstract: EIA-541 F7101 IRF7101 MS-012AA
Contextual Info: PD- 95306 IRF7450PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS l l 200V Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See

marking x2b

Abstract: X2N SCR X2M sot223 X0205N X0202BN X2B SCR
Contextual Info: X02xxxN  SENSITIVE GATE SCR FEATURES IT RMS = 1.4A VDRM = 200V to 800V Low IGT < 200 µA A K A G DESCRIPTION The X02xxxN series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose high volume applications using surface mount

Contextual Info: YG906C2R L L D 200V / 20A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 Features 1.2±0.2 13Min 3.7±0.2 Low VF Super high speed switching. High reliability by planer design. +0.2

CW317

Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 1 D L 2 C 4 1 Unit in mm O S W IT C H IN G T Y P E P O W E R S U PP LY A P P L IC A T IO N . O C O N V E R T E R & C H O P P E R A P P L IC A T IO N . • • • Repetitive Peak Reverse Voltage : Vr r m = 200V

GS 069

Abstract: F10-S30 2SK2064 SHINDENGEN DIODE
Contextual Info: L V X v U - X /n° 7 “ M0SFET LVX Series Power M OSFET OUTLINE DIMENSIONS 2SK2064 Oase ; STO-220 F10S30 [U n it! ram] 300V 10A ill 10.2 ±Q-2 1.3 «•= Date code • À 2 S Â (Ciss) ft'/JvSlV =fc T9 a « * # • ^ v ffitn w a r uv m ex-< '.y5: v ? 5 M ' A t f ; s u ,

IRGP50B60PDPBF

Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

ESAD92M-02

Contextual Info: ESAD92M-02 20A Outline drawings, mm 15.5 ±0.3 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 Features Insulated package by fully molding Low VF Super high speed switching 3.2 +0.3 20 Min 1.6 ±0.3 5.45 ±0.2 ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.5 ø3.2 ±0.2 9.3 ±0.3

2N6250

Abstract: 2N6251 2N6249
Contextual Info: SavantIC Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·High voltage inverters ·Switching regulators ·Line operated amplifier

coupler MOSFET DRIVER application note

Abstract: MOSFET sot23-6 68A 35V capacitor GA243DR7E2472MW01L TL431 sot23 ceramic capacitor, .1uF 36V 3A zener MAX9053 TL431 SOT-232
Contextual Info: AUTOMOTIVE Sep 01, 2003 A Compact 36-72V DC Input, 3.3V/10A Output Power Supply A compact power supply that provides a regulated 3.3V at currents up to 10A using the MAX5052A PWM controller is described here. This power supply operates from -36V to -72V and uses synchronous rectification to

1020ct

Abstract: N06A 400V 10A high efficiency rectifier MURF1040CT
Contextual Info: MCC MURF1005CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MURF1040CT










Features • • • • • 10 Amp Isolation Super Fast Low power loss, high efficiency

12v dc 240v ac inverter circuit diagram

Abstract: PBA150F-24 24v dc 240v ac inverter 250V4A
Contextual Info: Home > Product Details PBA150F Features Harmonic attenuator, PFC Complies with IEC61000-3-2 Universal input (AC85-264V) Super small-size & light weight Making to high effective by synchronous rectification technology (PBA50F - 150F) High variety of options (PBA50F - 150F)

c 151c

Abstract: UES2403
Contextual Info: Ultra Fast Recovery Rectifiers UFT2010 - UFT2020 Dim. Inches Minimum A B C D E F G H J K L M N P R M illim eter Maximum Minimum .390 .045 .180 .245 .550 .139 .100 .415 .055 .190 .260 .650 .161 .135 .250 .580 .210 .022 .115 .040 .070 .110 -.500 .190 .014

MBR20200FCT

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • MBR20200FCT 20 Amp High Voltage Power Schottky High Junction Temperature Capability

MLCC 0402 MTBF

Abstract: military passive component varistor 471 2kv 47n J 1000V sem 2005 backlight inverter IECQ-CECC Range 250nF 630V capacitor 33pF 6kV ESCC 5p6 0603
Contextual Info: Standard range - 10Vdc to 6kVdc X8R High Temperature capacitors TCC/VCC capacitors High Q capacitors Copper Barrier capacitors Open Mode and Tandem capacitors IECQ-CECC range AEC-Q200 range S02A Space grade range Safety Certified capacitors 250Vac Non Safety rated AC capacitors

2SK890

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Ä-MOSH HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 2SK890 INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resiatance : Rj)g(0N )=O.25£i(Typ.)

Contextual Info: CPV364M4UPbF Vishay High Power Products IGBT SIP Module Ultrafast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED soft ultrafast diodes RoHS COMPLIANT • Optimized for high speed over 5 kHz

IRHYS63234CM

Abstract: IRHYS67234CM
Contextual Info: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides

12v dc motor IG 2200 53

Abstract: IRHNJ7330SE
Contextual Info: PD - 93829 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ7330SE JANSR2N7465U3 400V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7330SE 100K Rads (Si) RDS(on) ID QPL Part Number

IRF1010

Abstract: IRF634N IRF634NL IRF634NS
Contextual Info: PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF634NPbF IRF634NSPbF IRF634NLPbF l l HEXFET Power MOSFET

TPN3021

Abstract: GR-1089 VDE0433 VDE0878
Contextual Info: TPN3021 Application Specific Discretes A.S.D. TRIPOLAR OVERVOLTAGE PROTECTION FOR NETWORK INTERFACES FEATURES Triple crowbar protection Low capacitance Low holding current: IH = 30mA minimum Surge current: IPP = 200A, 2/10µs IPP = 30A, 10/1000µs •

2sc1785

Contextual Info: Inchange Semiconductor Product Specification 2SC1785 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base