200V Search Results

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)

mpsa92

Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
Contextual Info: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance

2N1870

Abstract: 2N187
Contextual Info: SCRs 2N 1 87 0A -2 N 1 87 4A , J 1.25 Amp, Planar FEATU RES DESCRIPTION • Available as Either “JAN" or Standard Types • Operating D.C. Current Range: 5 to 1250mA • Pulse Currents: to 30A • Voltage Ratings: to 200V • Maximum Trigger Current: 0.2mA

Contextual Info: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1R5DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage VRRM=200V Average Forward Current F (AV) =1.5A (Ta=25°C) 35ns (Max.) Very Fast Reverse-Recovery Time v^o .g sv

MPS-92

Abstract: mps92 MPS93
Contextual Info: TOSHIBA MPS92 MPS93 Discrete Semiconductors Silicon PNPTransistor For High Voltage Application Features • High Voltage - Vceo = -300V MPSA92 - Vceo = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = (Max-) @ b = -20mA, lB = -2mA • Low Collector Output Capacitance

Contextual Info: 9097250 TOSHIBA D Ë | ciaci7SSD 000^ 314 O fea? TOSHIBA {D ISCR ET E/OPTO} DISCRETE/OPTO 67C Silicon Planar Type; Diode 09314 D T - c / - 1S2460-1S2462 GENERAL PURPOSE RECTIFIER APPLICATIONS. Unit in mm FEATURES: . High Reverse Voltage : VR=200V(Min.) (1S2462)

5kvd

Contextual Info: Multilayer Ceramic Chip Capacitors FEATURES • HIGH VOLTAGE 200Vdc ~ 5KVdc • NPO AND X7R DIELECTRICS • CASE SIZES FROM 0603 ~ 2225 • NICKEL BARRIER TERMINATION AND EXCELLENT MECHANICAL STRENGTH SPECIFICATIONS Operating Temperature Range Temperature Characteristic

Contextual Info: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

3000w power amplifier circuit diagram

Abstract: SA-12
Contextual Info: SA12 SA12 P r o dd uu cSA12 c tt TI en cnhonvoaltoi go yn FF rr oo mm Pulse Width Modulation Amplifiers FEATURE • • • • • • • HIGH FREQUENCY SWITCHING — 200 kHz WIDE SUPPLY RANGE—16-200V 15A CONTINUOUS TO 65°C CASE 3 PROTECTION CIRCUITS

Contextual Info: RF 2 Form A Low on-resistance AQW22PN DIP8-pin type featuring low on-resistance with 200V/400V load voltage RF 2 Form A Low on-resistance (AQW22PN) AQW22PN 6.4 .252 9.78 .385 3.9±0.2 .154±.008 9.78 .385 Height includes standoff 6.4 .252 3.6±0.2 .142±.008

100k Linear slide Potentiometer

Abstract: slide linear potentiometer RA3045 slide potentiometer 50k 45mm 10k slide Potentiometer slide potentiometer with led alpha 10K potentiometer TW-700143 RA3045F-20R-15LC-B50K-C 50k slide Potentiometer
Contextual Info: Date: 03/16/07 Ref.#: TW-700143 Alpha 30mm Slide Potentiometer with LED RA3045F Series LED 9 2-M2x0.4 T 15 7 T+11 T+15 3.5 T+10 Dimensions mm in. Specifications: • Tolerance: ± 20% • Slide Life: 15,000 Cycles • Rated Voltage: 200V • Rated Wattage: 20mm-0.1, 30mm, & 45mm-0.2

Contextual Info: RCD051N20 Data Sheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

APT30S20B

Abstract: APT20M36BLL APT30S20S
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30S20B APT30S20S 200V 200V 45A 45A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses

MSK4322

Abstract: 12 volt 200 Amp PWM 4322H 4322 motor
Contextual Info: ISO-9001 CERTIFIED BY DSCC 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4322 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.0°C/W (Each MOSFET)

NTE140A

Abstract: NTE147A NTE145A NTE139A NTE144A NTE5079A NTE146A NTE5087A NTE5068 NTE5084A
Contextual Info: NTE5061A thru NTE5105A Includes NTE134A thru NTE151A Zener Diode, 1 Watt ±5% Tolerance Features: D Zener Voltage 2.4V to 200V D Low Cost D Low Zener Impedance D Excellent Clamping D Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents Maximum Ratings and Electrical Characteristics: (TC = +25°C, unless otherwise specified.

APT15S20KCT

Abstract: APT20M36BLL
Contextual Info: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT G 1 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode

1351 NPN TRANSISTOR

Abstract: LT1351 LT1351CMS8 LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Transistor g29
Contextual Info: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower

do-214ab ed vishay

Contextual Info: ES3A thru ES3D Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifier DO-214AB SMC Reverse Voltage 50 to 200V Forward Current 3.0A Reverse Recovery Time 20ns Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90)

DN2620

Contextual Info: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology

VN2220

Abstract: VN2220N2 VN2220N3
Contextual Info: . VN22C inc N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVoss/ Order Number / Package ^DS O N ’ □(ON) (max) (min) TO-39 TO-92 Dicet 200V 1.25ft 5.0A VN2220N2 VN2220N3 VN2220ND 240V 1.25Q 5.0A VN2224N2

Contextual Info: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

DS25-.A

Abstract: GA mosfet
Contextual Info: Ætotxan PRODUCT DEVICES.INC. 3301 ELECTRONICS WAY. WEST PALM BEACH, FLORIDA 33407 TEL: 407 040-4311 FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MÜS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt.(l) VDSS Dra in-Ga te Vo 1tage VDGR (R gs = 1 -O M n ) (1)

Contextual Info: LEA D FINISH: GOLD CASING FINISH: GUILD CAPA CITA N CE ,050uF MIN, TEMP, RANGE -55°C TD 125°C CURRENT 15 AMP MAX, WORKING VOLTAGE 125VAC/400Hz 200VDC D,C, R E S IS T A N C E .Olohms SCHEMATIC o- MARKING: PART: -o NONE BAG: SCI — 9 9 4 5 — 5 03 HA C DATE CODE

Contextual Info: SAfiYO Quick Guide Bridge Rectifiers N o . 2 N i ths tand Cur ren t Rat ing To Single-Phase I FSM O u 11 ine (uni t:mm) Vo 1 tage Type No. (A) Rank (A ) (Side) D B A 2 0 Rema rks B 100V C 200V (Under Side) 20.0 E 400V G 600V ( - 12. 5-> 1 ! T ~ ; o : i