C51N20 Search Results

Contextual Info: RCD051N20 Data Sheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD051N20 Nch 200V 5.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

sot428 Part marking

Contextual Info: RCD051N20 RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source