200TY Search Results

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

MARKING D53 SOT23

Contextual Info: IC SMD Type Product specification 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

2SD596

Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

d54 marking

Abstract: MARKING D53 SOT23 marking D53 PT-200 2SD780A hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

sot-23 bv4

Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

m6 marking transistor sot-23

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

Contextual Info: Transistors IC SMD Type Product specification 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: Product specification 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

L6 TRANSISTOR

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.

2SC4886

Abstract: 2SA1860 DSA0016510
Contextual Info: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank

VCO190-200TY

Contextual Info: VCO190-200TY 4/16/2007 Frequency MHz VCO190-200TY Frequency vs Vtune 280 260 240 220 200 180 160 140 120 1 2 3 4 5 6 7 8 9 10 11 12 13 12 13 Vtune (V) Tuning Sensitivity (MHz/V) VCO190-200TY Tuning Sensitivity vs Vtune 16 14 12 10 8 6 1 2 3 4 5 6 7 Vtune (V)

Contextual Info: Transistors IC SMD Type Product specification 2SD780 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

MARKING SMD PNP TRANSISTOR BV

Abstract: TRANSISTOR SMD BV 640 smd transistor marking BV SMD PT-200 2SB624
Contextual Info: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

SOT-323 marking L6

Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.

Contextual Info: .030 DIA TYP. 120 *.002 .200 *oio ' r— y .200TYP. CUSTOMER DATA SHEET COIL: 26.5 VDC WINDING ol WINDING »2 1000 OHMS 1 10% 0 25° C 1000 OHMS 110% 0 25° C 13.0 VDC MUST OPERATE 13.0 VDC MUST OPERATE LAST ENERG. — j 26.5 VDC NOMINAL VOLTAGE 26.5 VDC NOMINAL VOLTAGE

A1056

Contextual Info: .120 * 0.002 190 MAX .410 MAX 200TYP. COIL: CUSTOMER DATA SHEET 26.5 VDC 0 25°C WINDING »1 WINDING o 2 1000 OHMS - 10% 25° C 1000 OHMS Î1056 S 25° C 13.0 VDC MUST OPERATE 13,0 VDC MUST OPERATE L A S T ENERG, 26.5 VDC NOMINAL VOLTAGE 26.5 VDC NOMINAL VOLTAGE

2SC4886

Abstract: 2SA1860
Contextual Info: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank

SMD DW3

Abstract: 2SD780 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SD780 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

2SC1623

Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.

RZC12N25

Abstract: rzc15n20 CRZ0524NC RZC12W20 RZC05N50 RZC05N35 RZC15W16 RZ-12W RZC12P25 CRZ0512NC
Contextual Info: 1/3 DC-DCコンバータ 非絶縁型・DIP RoHS指令対応製品 CRZ シリーズ 仕様・規格一覧 出力コンデンサ内蔵型 形名 最大出力電力 入力条件 入力電圧 Edc 効率 ∗1 出力特性・その他 出力電圧 Edc 最大出力電流

IC-7404

Abstract: RDH150 RDM24-2R5 RDH24-2R5 ic7404 RDM12-2R5 RDM15-4R0 ic74 RDM05-12R RDM05-6R0
Contextual Info: 1/14 DC入力電源 単一出力・長寿命品UL/C-UL認可品 R シリーズ RDM/RDH（30 ~ 150W） 発振周波数 300kHzの高周波化で小型化を実現しました。過電圧保 護・過電流保護のフェールセイフはもちろん、RC・RS・RV など

240v automatic change over switch circuit diagram

Abstract: EN61000-4-2 RTW03-12R RTW03-12RC RTW05-10R RTW12-4R3 RTW15-3R5 RTW28-1R8 RTW48-1R1 led L-612
Contextual Info: 1/19 Conformity to RoHS Directive AC Input Single Output, General-Purpose, UL/C-UL/TÜV Approved R Series RTW(50 to 300W) This is an ultra-thin, high-performance standard power supply that is both energy efficient and environmentally friendly. Utilizing TDK’s

B3P5-vh-b

Abstract: 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0
Contextual Info: A122_JBW 1/19 TDK Switching Power Supply Wide input, compact and device-embedded type J SERIES JBW UL/CSA, EN60950 approved and Electric Appliances And Material Control Law compliant, CE marking product [FEATURES] • Compact and low price. • Wide input voltage range type.