200S1 Search Results

"IEEE-488 GPIB"

Abstract: 200S1G4 IEEE-488 GPIB conn female 300 pins 200S1G4M1
Contextual Info: MODEL 200S1G4 M1 200 WATTS CW 0.8-4.2GHz 160 School House Road, Souderton, PA 18964-9990 USA Phone 215-723-8181•FAX 215-723-5688 The Model 200S1G4 is a portable, self-contained, air-cooled, broadband, completely solid-state amplifier designed for applications where instantaneous bandwidth, high gain and linearity are required. Push-pull circuitry is utilized in all high

HDS-1240E

Abstract: DAC397 HDS-1240EMB
Contextual Info: A N A LO G D E V IC E S Ultra High Speed ECL Hybrid D/A Converter HDS-1240E □ FEATURES 12-Bit Settling Time to 40ns Low Glitch Energy E C L Compatible Replacement for ADH-030, DA-4000, DAC397 HDS-1240E FU N C T IO N A L BLOCK DIAGRAM BIPOLAR OFFSET CURRENT

200L-1-203

Abstract: 200S-1-103 bourns 200l 200L-1-202 50k trimpot 200P-1-502 2n08 ltls 200S 200P-1-501
Contextual Info: BOURNS TRIMPOT AD JU STM E N T POTENTIOMETER Model 200 Industrial —W irewound —Potentiom eter VA" Lo n g Actual Size FEATURES • Lowest cost military quality potentiometer. • Ideal for computers and laboratory type applications. • Exceeds steady state humidity requirements of

ADI-H-1000

Abstract: CC10P C881
Contextual Info: High Speed, Low Drift FET Operational Amplifier ANALOG DEVICES AD380/AD381/AD382 1.1 Scope. This specification covers the device requirements for a high speed, low drift FET input operational amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:

IGBT 200A 1200V

Abstract: 200-S12
Contextual Info: 1-Pack IGBT 1200V 1x200A 1MBI 200S-120 n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching

LT 5216

Abstract: R/diode lt 5216 fa 8139 a9005 bsl4 LT+5216
Contextual Info: S E M I C O N D U C T O R 8-Channel Differential Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH 5216 is a die le ctrica lly isolated C M O S m onolithic a nalog m ultiplexer, designed as a plug-in repla ce m en t for th e H I547 and sim ilar devices, b ut adding fa u lt p rote ction to

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

2mbi

Abstract: IGBT 200A 1200V 200S-120 2X20
Contextual Info: 2-Pack IGBT 1200V 2x200A 2MBI 200S-120 • Outline Drawing IGBT MODULE S-Series ■ Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching

SM22

Abstract: V18SM16 V22SM16 V27SM16 V33SM16 220S1
Contextual Info: G E SOLID STATE Ôï DeT| 3Û750Ô1 _ □ D l t e]40 3 l~~ T'N -l 5 SURFACE-MOUNT VARISTORS SM SERIES Cont’d RATINGS AND CHARACTERISTICS TABLE: SM16 SERIES (Equivalent to 14mm Radial) SM 16 (io x 16mm), SM22 (14 x 22mm) Maximum Ratings (8S°C) Continuous

ME4003

Abstract: 2SC3124 12gw
Contextual Info: TOSHIBA 2SC3124 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 1 24 TV TUNER, VHF OSCILLATOR APPLICATIONS. U n i t in m m + 0 .5 2 .5 -I 1 3 + 0 .2 5 1 .5 - Q .l 5 I1 c5c5 ÈE- +1 -E3 dd +1 oo +l M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC

TDA9501

Abstract: LAYOUT PENTAWATT 200D
Contextual Info: SGS-THOMSON öälDglSOlilLKginSOKlDSg TDA9501 AC COUPLING HIGH VOLTAGE VID E O AMPLIFIER • ■ - BANDWIDTH : 40M H zTYPIC AL RISE AND FALLTIM E : 9ns TYPICAL SUPPLY VOLTAGE : 90 V POWER DISSIPATION : 2.3W PENTAW ATT Plastic Package O RDER CO DE : TDA9501

IGBT cross reference semikron eupec

Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
Contextual Info: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130

mb7134e

Abstract: MB7134 transistor A6U diode a3u mb7134y IN4010
Contextual Info: I l l FU JITSU PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY MB 7133E/H MB 7134E/H/Y N ovem ber 1985 E d it io n 2 .0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS X 4 BITS This Fujitsu MB 7133 and MB 7134 are high speed S chottkyTTL electrically field programmable read only memories organized as 4096 words by 4 bits.

smd transistor 6b3

Abstract: diode zener smd sg 64
Contextual Info: APEX niCRO TECHNO LOGY CORP b7E D OÔ7flb3b QG0151Q TTQ • A M T PA09 • PA09A A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • A P P L IC A T IO N S H O T L IN E 8 0 0 5 4 6 -A P E X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • •

IGBT 200A 1200V

Abstract: 200-S12 2x200
Contextual Info: 2-Pack IGBT 1200V 2x200A 2MBI 200S-120 n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching

BV-1 501

Abstract: Led driver 100W schematic EL1501C EL1501CM QCX0002
Contextual Info: HIGH PFRF-OHVANCE ANA;OG INTEGRATED CIRCUITS EL1501C élantec EL1501C—SLIDE* Differential L int Drinrr- Kecrirer F e a tu r e s G e n e ra l D e sc r ip tio n • Com plete A D SL differential d river an d receiver • 45 Vp.p differential o u tp u t drive

B47PP

Abstract: 6F20 8A SF
Contextual Info: Diodes Internationa! IQ R Rectifier VfM @ JtX Part Number VRR* V >FAV@t C (A) (C) IfSM 'F(AV) 50 Hi (V) (A) 60Hz RQK(DC) (A) (°C/W) Notes Fax on Demand Number Cose Outline Key Standard Recovery B-47PP 8A F05N PP 8A F1N PP 50 50 150 1.45 600 628 0.6 100

27S16

Abstract: sm22 V18SM16 V22SM16 V27SM16 V33SM16 82S16
Contextual Info: H A R R IsTËÎlIC O N » SECTOR 37E • t 4305271 UGEb757 7 « H A S T-Il- 1 5 SM16 SERIES Equivalent to 14mm Radial Ratings and Characteristics (Cont'd) Series SM 16 and S M 22 Varistors of 130 VR M S or greater are listed under i l l File N o. E56529 as a recognized com ponent.

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW NS 1 ADS7806 1 DEMO BOARD AVAILABLE See Appendix A Low-Power 12-Bit Sampling CMOS ANALOG-to-DIGITAL CONVERTER FEATURES DESCRIPTION • 35mW max POWER DISSIPATION The ADS7806 is a low-power 12-bit sampling analogto-digital using state-of-the-art CMOS structures. It

200S-120

Abstract: IGBT 200A 1200V IGBT 1200v IGBT EQUIVALENT
Contextual Info: 1-Pack IGBT 1200V 1x200A 1MBI 200S-120 n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching

TC818ACBQ

Abstract: TC818DCOP tc818 tc818a QR4 LCD 40 segment bargraph LCD
Contextual Info: WTELEDYNE COMPONENTS TC818 AUTO-RANGING ANALOG-TO-DIGITAL CONVERTER WITH 3-1/2 DIGIT AND BAR-GRAPH DISPLAYS FEATURES • Display Hold Function ■ 3-1/2 Digit Resolution in Auto-Range Mode .1/2000 ■ Extended Resolution in Manual Range M ode. 1/3000

Pure Sine Wave Inverter circuit

Abstract: pure sine wave inverter sine wave inverter 2000W INVERTER CIRCUIT 2000w PURE SINE WAVE inverter 60S-12E pure sine inverter sine wave inverter circuit inverter 1000w circuit "sine wave inverter"
Contextual Info: Sine Wave lnverter Technical data Technical data 600W Pure Sine Wave Inverter Item number 60S-12E Rated input voltage 12 V DC 60S-24E 24 V DC Constant output power Peak output power a max. of 10 min. 600 W 1000 W (650 W) Maximum input current 80A Output voltage

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation

AN 7112E

Contextual Info: FUJITSU MICROELECTRONICS F U JIT SU 53E D 3 7 417b2 PROGRAMMABL SCHOTTKY? 256!-B ll READ?ONÜfMEMOR’ QQDÖ737 MB MB MB MB ñ 7111E/H 7112E/H/Y 7111L 7112L March 1986 Edition 2.0 SCHOTTKY 256 BIT DEAP PROM 32 WORDS x 8 BITS The Fujitsu MB 7111 and MB 7112 are high speed Schottky T T L electrically