200PIS Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

Contextual Info: CMOS DRAM KM41C4001A 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 1 A is a C M OS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: HYUNDAI HYM5V641OOA N-Series 1M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64100A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit

TC5116400FT

Contextual Info: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

sa92

Abstract: SA93
Contextual Info: PNP Silicon Planar High Voltage Transistors M P SA92 M P SA93 D E S C R IP T IO N T h ese plastic encapsulated, general purpose tran sistors are designed for applications requiring high breakdow n voltages, low saturation voltages, and low capacitance. The E-line package is form ed by transfer

L442

Abstract: pin diagram of op-amp ic 747 bldc motor dip 28
Contextual Info: March 1996 PRELIMINARY ^ÉL Micro Linear ML4428 Sensorless Smart-Start BLDC PWM Motor Controller G EN ERAL D ESCRIPTIO N FEATURES The ML4428 motor controller provides all of the functions necessary for starting and controlling the speed of delta or WYE wound Brushless DC BLDC Motors without the need

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Tb4]i42 00150L4 bbä ■ SMGK KMM540512C/CG DRAM MODULES 5 1 2 K X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: I rac tc A C tft C 60ns 15ns 110ns KMM540512C-7 70ns 20ns 130ns KMM540512C-8 80ns

Contextual Info: KM44C1002A CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung K M 44C 1002A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

km44c1000aj

Abstract: 581000A
Contextual Info: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package

41C1000

Abstract: KMM591000AN 41C1000BJ
Contextual Info: MM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1M X 4 in 20-pin SOJ package and

3JA1

Contextual Info: KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4002B is a CMOS high speed 4,194,304 x 1 Dynamic Random Access Memory, Its de­ sign is op tim ized fo r high pe rform ance ap p lica tio n s

KM41C1001bp

Abstract: c1001b KM41C1001BJ
Contextual Info: KM41C1001B CMOS DRAM 1 M X 1 Bit C M O S Dynamic RAM with Nibble M ode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1001B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de­ sign is o p tim ized fo r high perform ance ap p lica tio n s

Contextual Info: KM416C1200L/LL CMOS DRAM 1M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b i t x i 6 Dynamic Random Access Memory. It's design is optimized for high performance applica­

Contextual Info: NN51V16160A/ NN51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The NN51V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The NN51V16160A/18160A series is fabricated with advanced CMOS