2009A Search Results

2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.

2SD1953

Abstract: EN2507 25073
Contextual Info: Ordering number:EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers. unit:mm 2009A Features [2SD1953] 8.0 · Darlington connection. · High DC current gain.

2SC2621

Abstract: ic sj 2038 TRANSISTOR ML5 sj 2038 12006A sj 2025 marking ML5 ic sj 2025 TO-220AA marking 2009a
Contextual Info: 2SC2621 NPN Triple Diffused Planar Silicon Transistor 2009A Color TV Chroma Output Applications E675A Absolute Maxi m u m Ratings at T a = 2 5 C Collector to Base Voltage CBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current

Ditelong

Abstract: LDM4057SRA 2009A
Contextual Info: NO.：QB/SPS 73 PS 2009A SPECIFICATIONS NAME: Φ10 TYPE: LDM4057SRA DOT MATRIX SHENZHEN DITELONG INDUSTRIAL CO.,LTD. SHENZHEN CANDELA ELECTRONIC CO.,LTD. SHENZHEN SUCCESS PHOTOELECTRONICS CO.,LTD SHENZHEN OFFICE Add: Room 1911,Zhongwin Science & Techn.Bldg,Bagua 3th Rd.Bagualing Industry Zone Shenzhen,China

2SA1248

Abstract: 2SC3116
Contextual Info: Ordering number:EN1032A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions • Color TV sound output, converters, inverters. unit:mm 2009A Features [2SA1248/2SC3116] · High breakdown voltage.

2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Contextual Info: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage

2SB1127

Abstract: 2sb1127 TRANSISTOR
Contextual Info: Ordering number:2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications Package Dimensions • Strobe, power supplies, relay drivers, lamp drivers. unit:mm 2009A Features [2SB1127] · Adoption of FBET, MBIT processes.

Contextual Info: revision for dwg # 1PB-2009A13 rev ch.no. - - date description original design 11/6/2007 revised by Philipp E. M20x1.5 or 1/2" NPT 87.5 mm [3.4 in] 90 mm [3.5 in] 50 mm [2.0 in] 93 mm [3.7 in] 78 mm [3.1 in] n22 mm [.9 in] unless otherwise specified: all dimensions are in millimeters

b1181

Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D I T - Q 1 - 3 7 * ^ 7 Q7b Q003775 0 l \ " 2SA1210 Epitaxial P la n a r S ilic o n T ra n sisto rs P N P/npn 2009A High Voltage S w itch in g , A F 1 5 0 W Predriver A p p lications 2SC2912 780C Features • A d o p tio n o f F B E T process

Contextual Info: DEMO MANUAL 2009A LT3791-1 60V Four-Switch Synchronous Buck-Boost Controller DESCRIPTION Demonstration circuit 2009A is a 60V four-switch synchronous buck-boost controller that demonstrates the high power capability of the LT3791-1. The output is 24V and the maximum output current is 5A. The switching

transistor 2sC2621

Abstract: 2SC262 2SC2621 DDD3710 LN 2003a 2009A bc 301 transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 12 E » I 7Ti7a7h DQOm?D r-3 3 -0 ? 2SC2621 N P N Triple D iffu s e d P la n a r S ilic o n T ra n sisto r 2009A Color TV Chroma Output Applications D675A Absolute Hay Im « Ratings at Ta=25C Collector to Base Voltage CBO Collector to Emitter Voltage vCEO

2sd439

Abstract: 2SB559
Contextual Info: 2SB559 E pitaxial P lanar S ilic o n T ra n sisto rs P N P /n p n 2009A 2SD439 P372E Low Frequency Power Am p, Medium Speed Switching Applications Matures . Large allowable collector dissipation and wide ASO. . Low saturation voltage and good linearity of hFE.

Contextual Info: 2009 MicroPuck TM 1 Watt LED Power Module by LEDdynamics TM Product Overview The 2009A MicroPuck is a versatile, compact solution for powering 1 High-Power LED from low DC voltages. The 2009A was designed to power (1) High-Power LED, or strings of 5mm (T 1-3/4) LEDs, efficiently and with stability. This

2SD826

Abstract: EE13 EE16 2sD826 transistor
Contextual Info: Ordering number:EN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009A [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8

2SD894

Abstract: 2SD894 transistor
Contextual Info: Ordering number:EN590B NPN Epitaxial Planar Silicon Transistor 2SD894 25V/1.5A Driver Applications Use Package Dimensions • Motor drive, printer hummer drive, relay drive, voltage regulator controller. unit:mm 2009A [2SD894] Features 8.0 2.7 · High DC Current Gain not less than 4000 .

ma 2009a

Abstract: LDM4057SRA 2009A
Contextual Info: NO.：QB/SPS 73 PS 2009A SPECIFICATIONS NAME: Φ10 TYPE: LDM4057SRA DOT MATRIX SHENZHEN DITELONG INDUSTRIAL CO.,LTD. SHENZHEN CANDELA ELECTRONIC CO.,LTD. SHENZHEN SUCCESS PHOTOELECTRONICS CO.,LTD SHENZHEN OFFICE Add: Room 1911,Zhongwin Science & Techn.Bldg,Bagua 3th Rd.Bagualing Industry Zone Shenzhen,China

"1 watt led"

Abstract: "1 watt led" datasheet 2009A LEDdynamics flashlight bulbs led flashlight solar led street light luxeon 1 watt 1 watt led
Contextual Info: 2009 MicroPuck TM 1 Watt LED Power Module by LEDdynamics TM Product Overview The 2009A MicroPuck is a versatile, compact solution for powering 1 High-Power LED from low DC voltages. The 2009A was designed to power (1) High-Power LED, or strings of 5mm (T 1-3/4) LEDs, efficiently and with stability. This

transistor d 1825 7c

Abstract: BU406
Contextual Info: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output

Contextual Info: sanyo s e m ic o n d u c t o r corp ~ 1 2 E D | 7 cH 7 Q 7 L i OOOSOb'J r ' 3 3 - I S NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1222C Features: • High Breakdown Voltage and High Reliability.

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

2SD1401

Abstract: 2042A 5033K
Contextual Info: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed

2sb1303

Contextual Info: SANYO SEMICONDUCTOR ' CORP 1EE II | 7 1 1 7 0 71 1 O M S im T -il' £>l S S 2 S B 1 2 3 1 / 2 S D 1 841 S S 2 S B 1 3 2 5 /2 S D 1 999 Complementary Pair Silicon Transistors Complementary Pair Silicon Transistors Low Saturation Voltage Amp Applications Motor Driver Applications

2SC3173

Contextual Info: SANYO SEMICONDUCTOR CORP 12E » I 7 CH 7 0 7 L , 0004311 7 T ' 53-11 2SC3173 NPN Epitaxial Planar Silicon Transistor 201OA C R T Display Horizontal Deflection Output Applications 1309B Features: ’ High switching speed • Especially suited for use in high-definition CRT display Vcc=6 to 12V

2SC930

Abstract: transistor 2SC930 2SC930NP 2SC2839 2SC930SPA 2SC930 D
Contextual Info: SANYO SEMICONDUCTOR CORP l^ifir|~^?cn 7 0 7 b % 2SC930 D004141 r-s/'/5r T “ 3 2 03 3 í - | 7 NPN. Epitaxial Planar Silico n Transistor 200 3 A AM Converter, FM RF • IF Amp Applications 545E The 2SC930 has two types of packges SPA and NP. Use • FM RF amp, mixer, OSC, converter, and IF amplifier.