2003A Search Results

2SB893

Abstract: SB893 1023C
Contextual Info: Ordering number:1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, strobes. unit:mm 2003A Features [2SB893] · Low saturation voltage : VCE sat ≤–0.45V (IC=–1.5A, IB=–0.15A).

yg 2025

Abstract: transistor bc 930 2SA929 2SA930 2SC1570
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D • TTTTOTb OOOflöaO 4 B T -2 7 - / S PNP Epitaxial Planar Silicon Transistor 2003A Very Low-Noise Amp Applications The 2SA929, 930 are transistors for very low noise AF amp. They are especially suited for use in the first stage of equalizer amp. in high-grade stereo sets.

transistor c2274

Abstract: transistor a984 A984 sc2274 transistor sc2274 2SA984 c2274 2SC2274 C2274 E C2274K
Contextual Info: SANYO S EM ICO NDUC TOR CORP 35E D • 7*H707fc, OOtHlfll 1 B9 ^ r -i:? -;:/ * PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 465F Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).

T35W

Abstract: transistor BC 543 transistor Bc 542 transistor bc 207 npn ako 544 126 2SC2998 922B knitter 34
Contextual Info: SANYO SEMICONDUCTOR 2SC2998 CORP 1EE I D 1 7Ti707ti ~r-3s-i3> 2003A N P N Ep itaxial P la n a r S ilic o n T ra n sisto r High Speed Sw itching a _ i : _ 922B Features . Fast switching speed. . High breakdown voltage. Absolute Maxiaui Ratings at Ta:25°C

2SA1450

Abstract: 2sc3708
Contextual Info: Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions • Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V unit:mm 2003A [2SA1450/2SC3708]

2SC2857

Abstract: EN753 7533 TO-92
Contextual Info: Ordering number:EN753C NPN Triple Diffused Planar Silicon Transistor 2SC2857 High-Voltage Driver Applications Applications Package Dimensions • Color TV vertical driver, sound driver applications. unit:mm 2003A Features [2SC2857] · High breakdown voltage VCEO≥180V

2SA1392

Contextual Info: Ordering number:EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. unit:mm 2003A [2SA1392/2SC3383] JEDEC : TO-92 EIAJ : SC-43 SANYO : NF : 2SA1392

2sd734

Abstract: 2SB698 512F
Contextual Info: Ordering number:512F PNP/NPN Epitaxial Planar Silicon Transistor 2SB698/2SD734 1W AF Output, Electronic Governor, DC-DC Converter Applications Package Dimensions unit:mm 2003A [2SB698/2SD734] JEDEC : TO-92 EIAJ : SC-43 SANYO : NP : 2SB698 for audio 1W output.

2SC3495

Abstract: ITR05631 ITR05632 ITR05633 ITR05634 ITR05635 ITR05636 A 14U
Contextual Info: Ordering number:ENN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF amplifier, various driver, muting circuit. unit:mm 2003A Features [2SC3495] · Adoption of FBET process.

Contextual Info: 2003A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.27p C1/C2 Min. Capacitance Ratio3.0 V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.135 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

ULQ2003A

Contextual Info: 57, U LQ 2001A - U LQ 2003A SCS-THOMSON U LQ 2002A - U LQ 2004A :u SEVEN DARLINGTON ARRAYS SEVEN DARLINGTONS PER PACKAGE EXTENDED TEMPERATURE RANGE -40 to 105°C OUTPUT CURRENT!- 500 mA PER DRIVER (600 mA PEAK) OUTPUT VOLTAGE 50 V INTEGRAL SUPPRESSION DIODES FOR IN­

2042A

Abstract: 2039 transistor SC-46 220kf 2049B
Contextual Info: TRANSISTOR CASE OUTLINES Case Outline 2003A unit: mm Case Outline 2042A T0126M L Case Outline 2039 Case Outline 2049B (unit: mm) T0220M F Case Outline 2048A {unit: mm) 0,44 2.0 0.» ob \ -»C *4.0— B: Base Cr Collector E: Emitter JEDEC : TO-92 EIAJ : SC-43

transistor tl 4311

Abstract: transistor 2sc1570 TRANSISTOR BC 157 TRANSISTOR BC 158 PA 2027A 2SC1570 TRANSISTOR IFW S2003A opa 2064 TRANSISTOR "BC 157"
Contextual Info: 3EE D SANYO SE MICONDUCTOR CORP 7Ti707b OGDÖÖ3Ö 1 | r - 2003A ' 2 f - / s N P N Epitaxial P la n a r S ilic o n T ra n s is to r Low-Noise Amp Applications 43 IE The 2SC1570 is developed as very low-noise tra n s isto r and is especially suited for use in equ alizer first

2SC693

Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
Contextual Info: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0

sn1328

Contextual Info: MCP2003/4/3A/4A LIN J2602 Transceiver Features: Description: • The MCP2003/2003A and MCP2004/2004A are compliant with Local Interconnect Network LIN Bus Specifications 1.3, 2.0 and 2.1 and are compliant to SAE J2602 • Support Baud Rates up to 20 Kbaudwith

B109

Contextual Info: Telecommunication ISDN U Transfor mer Transformers DT22-2003AT DT22-2003AT XXXX : DATE CODE WHITE DOT ON PIN1 DELTAXXXX C A B 10 9 8 7 6 6 5 0.5 TINNED CP WIRE D F 10 8 9 7 6 1 10 N1 E PRI 135 C N3 4 2 7 9 N2 N4 6 1 2 3 4 SEC 73.2 5 5 DIMENSIONS IN mm A B

pin diagram ULN2803

Abstract: Darlington pair IC 16 pin diagram of uln 2003 VLN 2003a IC 2803 Darlington pair IC 2803 ULN2003 PIN DIAGRAM ULN2003L ic. uln 2003 uln 2003 pin diagram
Contextual Info: X Ï W W Iik rn P h ir« U > J V I lr V I V A / I l i p o *?' ^ '< •• -eft- V. - ,' l m o o 3 L_ aLW 2003A & LJ2§03A ^H igh-Voltage , ¡g e n e r a l Description - . . y V 2 H ig h -C u rre n t D arlin g to n A rrays T The Series ULN2003 and the ULN2803 are HighVoltage, High-Current Darlington Arrays that are

2SC3382

Abstract: 2SA1391
Contextual Info: Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. · Low-noise use. unit:mm 2003A [2SA1391/2SC3382] Noise Test Circuit JEDEC : TO-92

VEBO-15V

Abstract: 2SC3495
Contextual Info: Ordering number:EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF amplifier, various driver, muting circuit. unit:mm 2003A Features [2SC3495] · Adoption of FBET process.

2SC3068

Abstract: VEBO-15V
Contextual Info: Ordering number:EN943G NPN Epitaxial Planar Silicon Transistor 2SC3068 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low-frequency, general-purpose amplifier., various drivers, muting circuit. unit:mm 2003A

2sc3114

Abstract: 2SA1246 high vebo
Contextual Info: Ordering number:EN1047B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003A [2SA1246/2SC3114] B:Base C:Collector

dc motor driver ic ULN 2003A PIN DIAGRAM

Abstract: LM 2003A ULN2003 PIN DIAGRAM ULN2001 ULN2003 darlington array with clamp diode 2A DARLINGTON ARRAYS uln series ULN2001A ULN2001A-ULN2002A
Contextual Info: ‘T I S G S -T H O M S O N ULN2001 a - u l n 2002A MÊIMSUILKSfflMSKODÊ U L N 2003A -U L N 2004A SEVEN DARLINGTON ARRAYS . SEVEN DARLINGTONS PER PACKAGE . OUTPUT CURRENT 500mA PER DRIVER 600mA PEAK - OUTPUTVOLTAGE 50V . INTEGRAL SUPPRESSION DIODES FOR IN­

2sa152

Abstract: 2SA1529
Contextual Info: Ordering number:EN2153A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1529/2SC3923 Switching Applications with Bias Resistance Applications Package Dimensions • Switching circuits, inverter circuits, interface circuits, driver circuits. unit:mm 2003A

2SA1527

Abstract: 2SC3921
Contextual Info: Ordering number:EN2151B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1527/2SC3921 Switching Applications with Bias Resistance Applications Package Dimensions • Switching circuits, inverter circuits, interface circuits, driver circuits. unit:mm 2003A