2000EA Search Results

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL21A106KPFN3NE  Product : Multi-layer Ceramic Capacitor  Description : CAP, 10㎌, 10V, ±10%, X5R, 0805 A. Samsung Part Number ① Series CL 21 A 106 K P F N 3 N E ① ② ③

1N60C

Abstract: *1N60C
Contextual Info: FQN1N0C N-Channel QFET MOSFET 00 V, 0.3 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

1N50C

Abstract: FQN1N50C
Contextual Info: FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

LG Innotek

Abstract: VF 0.1v
Contextual Info: Indicator Features ƒ Colorless transparency lens type. ƒ 5mm T-1 ¾ all plastic mold type. ƒ High luminosity. ƒ ESD Class based on Human Body Model(HBM) : 950V Absolute Maximum Ratings (Ta=25℃) ± Outline Drawing Item Symbol Value Unit Power Dissipation

Contextual Info: 0.4mm Pitch SERIES 5805 SUPER MICRO CONNECTORS 0.4mm Pitch BtoB H＝1.0mm ●プラグ Plug 注文コード/Ordering Code Part No. 14 5805 xxx X00x X829+ 0：金具無し ボス無し Without the anchor metal or the boss 1：金具無し ボス有り

JEDEC TO-252 LAND PATTERN

Contextual Info: Liteon Semiconductor Corporation LSP1084 5A Low Dropout Linear Regulator GENERAL DESCRIPTION FEATURES The LSP1084 is a series of low dropout three-terminal regulators with a dropout of 1.5V at 5A output current. The LSP1084 series provides current limiting and

8 pin zif connector 0.3mm FPC

Abstract: elco 120 pin 90 PIN ELCO Connector DCN-312
Contextual Info: 12.0 in h- 2.0 4.0 01.5 r r I r-5 CD u "Yw. 5? i i 1*- F < SECT.F-F DATUM PIN SECT.E-E REEL DIMENSION 8 | 7 6 5 NO. PART NO. DESCRIPTION QTY MATERIAL REMARKS DRW NO. 1 CONNECTOR 2 EMBOSSED TAPE 1 POLYSTYRENE 3 TOP COVER TAPE 1 POLYSTYRENE 4 REEL 1 CORRGATED CARDBOARD or POLYSTYRENE

TMS320C54x, instruction set

Abstract: TMS320C541 TMS320C542 TMS320C548 TMS320C549 EXORCISER
Contextual Info: TMS320C54x Assembly Language Tools User’s Guide 1997 Digital Signal Processing Products Printed in U.S.A., January 1997 2617677-9761 revision D SPRU102B User’s Guide TMS320C54x Assembly Language Tools 1997 TMS320C54x Assembly Language Tools User’s Guide

1N60C

Abstract: FQN1N60CTA 11N60C D 92 M - 03 DIODE
Contextual Info: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

TMS320C549

Abstract: q notations for tms320c54x TMS320C54x, instruction set tektronix 463 F495 LA 76810 OR EQUALANT LNK500 spru131 TMS320C548 TMS320C541
Contextual Info: TMS320C54x Assembly Language Tools User’s Guide Literature Number: SPRU102B Manufacturing Part Number: 2617677-9761 revision D January 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

Contextual Info: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

1N60C

Abstract: FQN1N60C
Contextual Info: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

1084 TO-252

Abstract: 1084-VV
Contextual Info: Liteon Semiconductor Corporation LSP1084 5A Low Dropout Linear Regulator GENERAL DESCRIPTION FEATURES The LSP1084 is a series of low dropout three-terminal regulators with a dropout of 1.5V at 5A output current. The LSP1084 series provides current limiting and

viking b-2 class 130

Abstract: viking b-2 class b viking CSR viking b-2 class 130 b viking csr0204 CSR0207 CL02A marking SMD CODES 1002 RF Transceiver 1.9 ghz Thermocouple antiacid
Contextual Info: Resistors Thin Film Precision Chip Resistor AR Series 2 Thin Film Precision Resistor CSR Series 7 Anti-Corrosive Thin Film Precision Chip Resistor PR Series 10 Current Sensing Chip Resistor CS Series 14 Ultra Low Ohm Metal Strip Chip Resistor LR Series 18

TMS320C54x, instruction set

Abstract: TMS320C541 TMS320C542 TMS320C548 TMS320C549 HEX500 EXORCISER motorola
Contextual Info: TMS320C54x Assembly Language Tools User’s Guide 1997 Digital Signal Processing Products Printed in U.S.A., January 1997 SDS SPRU102B User’s Guide TMS320C54x Assembly Language Tools 1997 TMS320C54x Assembly Language Tools User’s Guide Literature Number: SPRU102B

Contextual Info: 【CFS Series】 Carbon Film Resistor •Features －SMD style carbon resistor －Free direction for mounting due to cylindrical design －High solder ability due to specially plated electrodes －Electrodes strength is higher than flat chip resistors －Lower current noise than thick film flat chip resistors

1N50C

Abstract: 11n50c FQN1N50CTA FQN1N50CBU
Contextual Info: QFET FQN1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

1N60C

Abstract: FQN1N60C
Contextual Info: FQN1N60C 600V N-Channel MOSFET Features Description • 0.3 A, 600 V, RDS on = 11.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

CSR0207

Abstract: viking CSR viking csr0204 CSR0204 R050 RESISTOR r100 resistor class b viking
Contextual Info: Metal Film Precision Resistor－CSR Series Features －Advanced thin film technology. －Excellent overall stability: Class 0.25. －Force fitted steel caps, tin plated on nickel barrier. －Pure Sn termination on Ni barrier layer. －Compatible with lead Pb -free and lead containing soldering processes.

5801

Contextual Info: 0.4mm Pitch SERIES 5801 SUPER MICRO CONNECTORS 0.4mmPitch BtoB H=0.8mm ●プラグ Plug 注文コード/Ordering Code Part No. 14 5801 xxx X00x X829+ 2：金具有り ボス無し With the anchor metal, without the boss 3：金具有り ボス有り With the anchor metal and the boss

Contextual Info: Indicator Features ƒ Colorless transparency lens type. ƒ 5mm T-1 ¾ all plastic mold type. ƒ High luminosity. ƒ ESD Class based on Human Body Model(HBM) : 950V Absolute Maximum Ratings (Ta=25℃) ± Outline Drawing (Unit:mm) ± ± ± ± ± Item Symbol