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    1N50C Search Results

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    SLKOR SLESD11N5.0C

    18A@8/20US 162W@8/20US 9V 7.2V 5
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    DigiKey () SLESD11N5.0C Tape & Reel 10,000 10,000
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    SLESD11N5.0C Cut Tape 10,000 1
    • 1 $0.13
    • 10 $0.08
    • 100 $0.05
    • 1000 $0.03
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    SLESD11N5.0C Digi-Reel 10,000 1
    • 1 $0.13
    • 10 $0.08
    • 100 $0.05
    • 1000 $0.03
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    Infineon Technologies AG SPB21N50C3ATMA1

    MOSFET N-CH 560V 21A TO263-3
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    DigiKey () SPB21N50C3ATMA1 Tape & Reel 2,434 1,000
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    SPB21N50C3ATMA1 Cut Tape 2,434 1
    • 1 $4.91
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    • 1000 $2.00
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    SPB21N50C3ATMA1 Digi-Reel 2,434 1
    • 1 $4.91
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    • 100 $2.30
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    Avnet Americas SPB21N50C3ATMA1 Tape & Reel 14 Weeks 1,000
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    Newark () SPB21N50C3ATMA1 Tape & Reel 1,651 100
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    • 1000 $2.09
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    SPB21N50C3ATMA1 Cut Tape 1,651 1
    • 1 $5.35
    • 10 $3.53
    • 100 $2.50
    • 1000 $2.09
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    TME SPB21N50C3ATMA1 1,000
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    EBV Elektronik SPB21N50C3ATMA1 2,000 15 Weeks 1,000
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    Rochester Electronics LLC FQP11N50CF

    MOSFET N-CH 500V 11A TO220-3
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    DigiKey FQP11N50CF Tube 2,116 137
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    Rochester Electronics LLC SPA21N50C3XKSA1

    HIGH POWER_LEGACY
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    DigiKey SPA21N50C3XKSA1 Bulk 1,465 103
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    Infineon Technologies AG SPP21N50C3XKSA1

    MOSFET N-CH 500V 21A TO220-3
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    DigiKey SPP21N50C3XKSA1 Tube 1,000 1
    • 1 $4.74
    • 10 $4.74
    • 100 $2.21
    • 1000 $1.70
    • 10000 $1.70
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    Avnet Americas SPP21N50C3XKSA1 Tube 500
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    Newark SPP21N50C3XKSA1 Bulk 1
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    Bristol Electronics SPP21N50C3XKSA1 1,950 1
    • 1 $2.44
    • 10 $1.59
    • 100 $1.15
    • 1000 $1.05
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    Rochester Electronics SPP21N50C3XKSA1 39 1
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    • 100 $1.48
    • 1000 $1.33
    • 10000 $1.25
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    Vyrian SPP21N50C3XKSA1 11,372
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    1N50C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N50C

    Abstract: FQN1N50C
    Contextual Info: 1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original
    FQN1N50C FQN1N50C 1N50C PDF

    FQN1N50CTA

    Contextual Info: 1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to


    Original
    FQN1N50C FQN1N50CTA PDF

    CRT - TCL COLOUR TV SCHEMATIC DIAGRAM

    Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A
    Contextual Info: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF

    Contextual Info: QFET 1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQN1N50C PDF

    1N50C

    Abstract: FQN1N50C FQN1N50
    Contextual Info: QFET 1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQN1N50C 1N50C FQN1N50C FQN1N50 PDF

    1N50C

    Abstract: 11n50c FQN1N50CTA FQN1N50CBU
    Contextual Info: QFET 1N50C 500V N-Channel MOSFET Features Description • 0.38 A, 500 V, RDS on = 6.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQN1N50C FQN1N50C FQN1N50CBU FQN1N50CTA 1N50C 11n50c PDF