20.0 Search Results

TOSHIBA HEMT

Abstract: TGI7785-120L
Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

Contextual Info: MWT-0820S-3P2/0820Z-3P2 8M U tlZ MililVlBrMilSlt www.mwtinc.com Email; info@-m.wtinc.com TYPICA L SPECIFICATIONS AT 25 °C • 20.0 dBm P-ldB • 5.5 dB SMALL SIGNAL GAIN • 15.0 dB RETURN LOSS • 100 mA @ +8V • USES TWO MwT-3HP GaAs FET DEVICES • 7.5 dB NOISE FIGURE

gem 65

Abstract: modbus wago
Contextual Info: Data sheet from 20.06.2012 Item no.: 750-842 Product description: ETHERNET TCP/IP PROGRAMMABLE FIELDBUS CONTROLLER 10 MBit/s DIGITAL AND ANALOG SIGNALS Produkt kann von Bild abweichen / product may differ Packing unit 1 piece RoHS compliant Product group 15 I/O System

O116

Abstract: Kobitone Audio Company
Contextual Info: Speaker Date: 5/6/05 Dimensions: mm In. Part Number: 253-5301 ø12.2 (ø.48) 3.8 (.15) ø11.6 (ø.457) 5±.20 (.197±.008) ø30±.20 (ø1.18±.008) A: Frequency Response, Magn dB re 20.00PA 100 90 Speaker dB 80 70 60 50 20 200 Hz 2K 20K KT-400225 Electrical Specifications:

Contextual Info: 20.06.2013 RF 19 - Signal indicator, 1 x 1-module 3.14.002.053/0000 For more information, see LEDs. Suitable for RK 90 system design, illuminated for 2-module keycap. General information Colour of lens Recommended key grid yellow 23/x mm Dimensions Length

QTE-060-09-X-D-A

Abstract: QTE-20-XX-D-XX-X-FL QTE-060 1-G17
Contextual Info: QTE-XXX-XX-XXX-D-XXX REVISION BY .155 3.94 REF SEE NOTE 13 DO NOT SCALE FROM THIS PRINT 01 02 .035 0.88 REF .055 1.40 No OF POSITIONS -020, -040, -060, *-080, *-100 (PER ROW) * (SEE NOTE 11) C C1-A-DC LEAD STYLE (No OF POSITIONS / 20) x .7875 [20.003] -01: .1680 [4.267]

Contextual Info: Directional Coupler ZMDC-15-6 Typical Performance Data FREQUENCY MHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 35.0

RF Product Device Data

Abstract: XB1004 XP1013 XU1002-QD XU1002-QD-0N00 XU1002-QD-0N0T XU1002-QD-EV1
Contextual Info: 17.0-25.0 GHz GaAs Transmitter QFN, 7x7mm U1002-QD July 2008 - Rev 14-Jul-08 Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +13 dBm P1dB 2.0 dBm LO Drive Level 20.0 dB Image Rejection, 9.0 dB Conversion Gain 7x7 mm, QFN

ZSCJ-2-1

Contextual Info: 2 Way-180° Power Splitter/Combiner ZSCJ-2-1 Typical Performance Data FREQ. INSERTION LOSS dB (MHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 20.0 23.0 26.0 29.0 32.0 35.0 38.0 41.0 44.0 47.0 50.0 55.0 60.0 65.0 70.0 75.0 80.0 85.0 90.0 95.0 100.0 110.0 20.0

4562

Contextual Info: Frequency Mixer ZX05-762H+ Typical Performance Curves Conversion Loss @ IF=30MHz 20.0 LO = +14dBm Conversion Loss dB 18.5 LO = +17dBm 17.0 LO = +20dBm 15.5 14.0 12.5 11.0 9.5 8.0 6.5 5.0 2060 2678 3296 3914 4532 5150 5768 6386 7004 7622 8240 RF Frequency (MHz)

Contextual Info: Directional Coupler ZFDC-20-3-75+ Typical Performance Curves Coupling 19.0 0.05 19.1 0.10 19.2 0.15 19.3 Coupling dB Insertion Loss (dB) Insertion Loss 0.00 0.20 0.25 0.30 19.4 19.5 19.6 0.35 19.7 0.40 19.8 0.45 19.9 0.50 20.0 10 34 58 82 106 130 154 178

26 pin DOT MATRIX

Abstract: DM2-8808 DM2-8808GU-DA01 5 x 7 DOT MATRIX DIAGRAM 18 pin DOT MATRIX 10KHZ 8*8 dot matrix red DM2-8808HO-DA01
Contextual Info: DM2-8808 SERIES ∅1.9mm 8 X 8 SINGLE COLOR DOT MATRIX LED DISPLAYS FEATURES • 0.8inch 20.0mm Matrix height • Choice of three colors-Bright Green / Orange / SH. Red • Flat package and light weight • Easy assembly • High quality and low cost • High reliable and intensity

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

TFH85P330RJE

Abstract: 10R2 400M TFH85P15R0JE
Contextual Info: TFH Series 85 Watt TO264 Package Thick Film Power 0.79" 20.07mm P style (standard) 0.20" (5.08mm) M style (optional) 0.25" (6.35mm) 1.03" (26.16mm) FEATURES SPECIFICATIONS • 85 Watt power rating at 25°C case temperature • Non-inductive performance • Low thermal resistance

1 micro farad capacitor

Abstract: 100 micro farad capacitor ECG012 high power amplifier sot89
Contextual Info: PRELIMINARY DATA SHEET ECG012 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications n n DC to 2500 MHz 35 dBm Typical OIP3 at 2400 MHz Highly Reliable InGaP HBT 20.0 dBm Typical P1dB at 2400 MHz 5.1 dB Typical Noise Figure at 900 MHz Excellent Stability

Contextual Info: NO.MLPGE10028 SPECIFICATIONS HIGH FREQUENCY MULTILAYER CHIP FILTER FI 212B448802-T TAIYO YUDEN CO., LTD. Date: 20.0ct.2010 HIGH FREQUENCY MULTILAYER CHIP FILTER Table of Contents 1. Scope 2. Part Numbering System 3. Electrical specification 3-1 Electrical Characteristics

IC1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Contextual Info: SAfiYO Quick Guide Bridge Rectifiers N o . 2 N i ths tand Cur ren t Rat ing To Single-Phase I FSM O u 11 ine (uni t:mm) Vo 1 tage Type No. (A) Rank (A ) (Side) D B A 2 0 Rema rks B 100V C 200V (Under Side) 20.0 E 400V G 600V ( - 12. 5-> 1 ! T ~ ; o : i

70M15A

Contextual Info: MONOLITHIC CRYSTAL FILTERS FEATURES STABLE TEMPERATURE CHARACTERISTICS CUSTOM SPECIFICATIONS AVAILABLE SPECIFICATIONS CHANNEL SPACING 12.5 kHZ 20.0 kHZ MODEL CENTER PASS RIPPLE FREQUENCY BANDWIDTH kHz kHz MIN dB dBm MAX TERMINATING CASE POLES IMPEDANCE STYLE

Contextual Info: MOS FET FKV660S under development ID = 100µA, VGS = 0V VGS = ±20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V max 60 ±10 100 2.0 1.0 20.0 11 2000 900 100 ID = 25A VDD 12V RL = 0.48Ω

am varactor

Abstract: KV1583A KV1581 KV1581A-3
Contextual Info: AM Varactor Diodes Part no. KV1563M Capacitance pF VRmax (V) min 428.0 20 typ 100.0 20.0 428.0 KV1563BM 20 27.0 506.0 100.0 20.0 428.0 KV1564M KV1580 KV1580A-1 KV1580NT KV1581 KV1581A-2 KV1581A-3 KV1582M KV1583A KV1583BM 20 30 30 30 30 30 30 30 30 30 max

R3767

Abstract: 168L259764
Contextual Info: NO.MLPGE10030 SPECIFICATIONS HIGH FREQUENCY MULTILAYER CHIP FILTER FI 168L259764-T TAIYO YUDEN CO., LTD. Date: 20.0ct.2010 HIGH FREQUENCY MULTILAYER CHIP FILTER Table of Contents 1. Scope 2. Part Numbering System 3. Electrical specification 3-1 Electrical Characteristics

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

Contextual Info: EMP209-Q5 17.0 – 20.0 GHz Packaged Power Amplifier ISSUED 05/30/2007 FEATURES • • • • 17.0 – 20.0 GHz Operating Frequency Range 28.5dBm Output Power at 1dB Compression 11.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm APPLICATIONS