20/800V IRF Search Results

Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE50 diode 71A
Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE30
Contextual Info: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE40
Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

"VDSS 800V" mosfet

Abstract: IRFBE30L IRFBE30S
Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

IRFNG50

Abstract: mosfet 10a 800v high power 91556A
Contextual Info: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

IRFAG50

Contextual Info: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

BTA12 600V

Abstract: scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STD25NF20 600v 5A scr diac triac bta08 triac 800V 1A
Contextual Info: LIGHTING Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions STBV68 STBV45 STBV42 STBV32 STX13003 ST13003 BULT118 BULK128D-B BULD1101ET4 STD13003-1 BULD118D-1 BULB39DT4 BULB49DT4 STB13005-1 BUL118 BUL128 BUL128D-B

800v irf

Abstract: IRFBE30L IRFBE30S 95507 irf 480
Contextual Info: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

CD 1517

Abstract: IRFIBE20G
Contextual Info: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =

1RFPE40

Abstract: IRFPE40 NC1636 IR rectifier diode 100A 800V 54A-V
Contextual Info: |^ t ¡ 0 f " f lc l[ t ÍO r i3 l HI 4Ô554S2 D01SSR2 DQ2 M I N R K l Rectifier IRFPE40 HEXFET® Power M O S F E T • • • • • • PD-9.578B INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
Contextual Info: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG30

Contextual Info: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

Contextual Info: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFBE30L

Abstract: IRFBE30S
Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International

smd diode 39a

Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The