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    2.2K Datasheets (27)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    22K112-R
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 79.48KB 1
    2.2K3A1-25
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A1A
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A1AM
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A1IA
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A1W2
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A1W3
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A2B
    Betatherm Thermistor, NTC, Interchangeable, 3892K Sensitivity Index Original PDF 648.28KB 13
    2.2K3A359I
    Unknown THERMISTOR NTC Scan PDF 73.49KB 1
    badge NV1206B222K202CEGN
    Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes 0603 to 2225, rated voltage 25V to 630V, capacitance range 100pF to 10μF, and capacitance tolerance per specification.Multilayer ceramic capacitors (MLCC) in EIA sizes 0603 to 2225 with voltage ratings from 25V to 6kV, available in C0G and X7R dielectrics, offering high reliability, low loss, and compliance with RoHS and AEC-Q200 standards.Multilayer ceramic capacitors (MLCC) in various series including general-purpose, high-voltage, soft-terminated, and automotive-grade types, with capacitance ranges from 0.5pF to 10μF, voltage ratings up to 6kV, and EIA sizes from 0603 to 2225, featuring X7R or C0G dielectrics and RoHS compliance. Original PDF
    badge NL0805B222K500CPBN
    Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes from 0603 to 2225, capacitance range 100pF to 10μF, rated voltage up to 630V, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G/X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G or X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C. Original PDF
    badge NV1206B122K102CEDN
    Hui Ju (Capacitors) Multilayer ceramic capacitors (MLCC) with EIA sizes from 0603 to 2225, available in C0G and X7R dielectrics, rated voltages up to 4000V, capacitance ranges from 0.5pF to 10μF, and compliant with RoHS standards.Multilayer ceramic capacitors (MLCC) with EIA sizes from 0603 to 2225, available in C0G and X7R dielectrics, rated voltages up to 4000V, capacitance ranges from 0.5pF to 10μF, and low ESR designs for high reliability applications. Original PDF
    badge HK32ASPIN 022K8T7
    Shenzhen Hangshun Chip Technology R&D Co Ltd 32-bit ARM Cortex-M0 motor control MCU with 60KB Flash, 8KB SRAM, 80MHz clock, 12-bit ADC, and hardware EMACC for FOC, supporting multiple packages. Original PDF
    badge NV1210B222K202CEKN
    Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes from 0603 to 2225, capacitance range 100pF to 10μF, rated voltage up to 630V, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G/X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G or X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C. Original PDF
    badge NV1808B222K202CEKN
    Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes from 0603 to 2225, capacitance range 100pF to 10μF, rated voltage up to 630V, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G/X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G or X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G or X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C. Original PDF
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    TE Connectivity CRGCQ0805F22K

    RES 22K OHM 1% 1/8W 0805
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    DigiKey () CRGCQ0805F22K Digi-Reel 335,410 1
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    CRGCQ0805F22K Cut Tape 335,410 1
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    CRGCQ0805F22K Tape & Reel 335,000 5,000
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    Newark CRGCQ0805F22K Cut Tape 14,842 1
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    Master Electronics CRGCQ0805F22K 100,000
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    YAGEO Corporation AC0603FR-0722K6L

    RES SMD 22.6K OHM 1% 1/10W 0603
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    DigiKey () AC0603FR-0722K6L Digi-Reel 34,755 1
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    AC0603FR-0722K6L Tape & Reel 30,000 5,000
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    Avnet Americas AC0603FR-0722K6L Tape & Reel 30,000 16 Weeks 5,000
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    Newark AC0603FR-0722K6L Cut Tape 9,885 1
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    Rutronik AC0603FR-0722K6L Tape & Reel 15,000 5,000
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    IBS Electronics AC0603FR-0722K6L 5,000
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    TDK Electronics B78108E1222K009

    FIXED IND 2.2UH 3.4A 57 MOHM TH
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    DigiKey () B78108E1222K009 Cut Tape 25,700 1
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    B78108E1222K009 Ammo Pack 25,000 2,500
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    JST Manufacturing ASEHSEH22K305

    JUMPER SEH-001T-P0.6 X2 12"
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    DigiKey ASEHSEH22K305 Bulk 10,358 1
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    IBS Electronics ASEHSEH22K305 1,000 1,000
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    Vishay Dale CRCW060322K1FKTA

    RES SMD 22.1K OHM 1% 1/10W 0603
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    DigiKey () CRCW060322K1FKTA Digi-Reel 7,544 1
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    CRCW060322K1FKTA Cut Tape 7,544 1
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    CRCW060322K1FKTA Tape & Reel 5,000 5,000
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    2.2K Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DTC123TKA Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 2.2kΩ SMT3 50V SOT-346(SC-59) l Features 1) Built-In Biasing Resistor


    Original
    DTC123TKA 100mA 100mA OT-346 SC-59) PDF

    Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ


    Original
    DTA123E -100mA -100mA DTA123EM DTA123EE SC-105AA) OT-416 SC-75A) PDF

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


    OCR Scan
    10kii) Q62702-C2383 OT-23 xds pnp Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs PDF

    Contextual Info: DTC023J series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Builtin Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of


    Original
    DTC023J 100mA 100mA DTC023JM DTC023JEB SC-105AA) SC-89) PDF

    TF256

    Contextual Info: Ordering number : ENA1616B TF256 N-Channel JFET http://onsemi.com 20V, 140 to 450 A, 1.7mS, USFP Features • • • • • • High gain : GV=2.7dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products [1.0mmx0.6mm×0.27mm (max 0.3mm)]


    Original
    ENA1616B TF256 A1616-7/7 TF256 PDF

    BCR108W

    Abstract: VSO05561
    Contextual Info: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


    Original
    BCR108W VSO05561 EHA07184 OT323 Nov-29-2001 BCR108W VSO05561 PDF

    DSA0037427

    Abstract: SEMH10
    Contextual Info: SEMH10 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ)


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    SEMH10 EHA07174 OT666 Feb-09-2004 DSA0037427 SEMH10 PDF

    pnp array

    Abstract: SEMD10 DSA0037426 DSA003742
    Contextual Info: SEMD10 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)


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    SEMD10 OT666 EHA07176 OT666 Feb-26-2004 pnp array SEMD10 DSA0037426 DSA003742 PDF

    FJX3013R

    Abstract: FJX4013R
    Contextual Info: FJX3013R FJX3013R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJX4013R 2 1 SOT-323 1. Base 2. Emitter 3. Collector


    Original
    FJX3013R FJX4013R OT-323 FJX3013R FJX4013R PDF

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2213 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=2.2K£1, R2=47K£1) • C om plem ent to KSR 1213 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan
    KSR2213 -10mA, PDF

    Contextual Info: FJN3313R FJN3313R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJN4313R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor


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    FJN3313R FJN4313R FJN3313RBU FJN3313RTA PDF

    Contextual Info: KSR1013 KSR1013 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR2013 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit


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    KSR1013 KSR2013 PDF

    Contextual Info: KSR1113 KSR1113 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to KSR2113 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original
    KSR1113 KSR2113 OT-23 OT-23 PDF

    Contextual Info: KSR2213 KSR2213 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR1213 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit


    Original
    KSR2213 KSR1213 O-92S PDF

    Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2013 SWITCHING APPLICATION B ias R esistor Built In T O -92 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R1=2.2K£1, R2=47K£1) • C om plem ent to KSR 1013 ABSOLUTE MAXIMUM RATINGS (TA=25°C)


    OCR Scan
    KSR2013 -10mA, PDF

    KIA6225S

    Abstract: KIA6225P G22K KIA6 3K10K
    Contextual Info: SEMICONDUCTOR KIA6225P/S TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DUAL PRE-AMPLIFIER W D High voltage gain : GVO=100dB Typ. at f=1kHz. G Excellent channel separation and high ripple rejection. : CHsep=65dB(Typ.) P d (f=10kHz, Rg=2.2k L H Dual pre amplifier for car or home stereo use.


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    KIA6225P/S 100dB 10kHz, 20kHz. KIA6225S KIA6225P G22K KIA6 3K10K PDF

    BCR553

    Contextual Info: BCR553 PNP Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23


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    BCR553 VPS05161 EHA07183 Jul-23-2001 BCR553 PDF

    BCR08PN

    Abstract: VPS05604
    Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation


    Original
    BCR08PN VPS05604 OT-363 EHA07193 EHA07176 OT363 Jul-12-2001 BCR08PN VPS05604 PDF

    BCR158

    Abstract: BCR158F BCR158L3 BCR158T SEMB10
    Contextual Info: BCR158./SEMB10 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


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    BCR158. /SEMB10 BCR158/F/L3 BCR158T/W SEMB10 EHA07183 EHA07173 BCR158 BCR158L3 BCR158F BCR158 BCR158F BCR158L3 BCR158T SEMB10 PDF

    PWR4522

    Abstract: THERMAL Fuse RESISTOR
    Contextual Info: PL IA NT CO M *R oH S Features Applications • Fuses safely at 220/240 mains voltage ■ White goods ■ Resistance values as high as 2.2K ohms ■ Inverters ■ Flameproof silicone coating ■ Lighting ■ Low TCR ■ Metering ■ RoHS compliant* PWR4522 Fusible Power Resistors


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    PWR4522 PWR4522A THERMAL Fuse RESISTOR PDF

    BCR108W

    Abstract: VSO05561
    Contextual Info: BCR108W NPN Silicon Digital Transistor 3  Switching circuit, inverter, interface circuit, driver circuit  Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323


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    BCR108W VSO05561 EHA07184 OT323 Jul-16-2001 BCR108W VSO05561 PDF

    A1906

    Abstract: SC-106A tf262 IT16225 TF262TH
    Contextual Info: TF262TH Ordering number : ENA1906 SANYO Semiconductors DATA SHEET TF262TH N-channel Silicon Juncton FET For ECM use Features • • • • • Low output noise voltage : VNO= -112dB typ. VCC=2V, RL=2.2kΩ, Cin=5pF Ultrasmall package facilitates miniaturization in end products : 1.4mm x 1.2mm × 0.34mm


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    ENA1906 TF262TH -112dB A1906-5/5 A1906 SC-106A tf262 IT16225 TF262TH PDF

    FJY3013R

    Abstract: FJY4013R
    Contextual Info: FJY3013R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=2.2KΩ, R2=47KΩ • Complement to FJY4013R Eqivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings *


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    FJY3013R FJY4013R FJY3013R FJY4013R PDF

    GAAS FET AMPLIFIER for optical receiver

    Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit
    Contextual Info: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range


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    F0100504B 100MHz) 1900MHz OC-48/STM-16 F0100504B OC-48/STM-16, MIL-STD-883C GAAS FET AMPLIFIER for optical receiver transimpedance amplifier F0321818M F0832483T FET differential amplifier circuit PDF