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Contextual Info: DTC123TKA Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCEO Value IC 100mA R1 2.2kΩ SMT3 50V SOT-346(SC-59) l Features 1) Built-In Biasing Resistor

Contextual Info: DTA123E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 2.2kΩ 2.2kΩ VMT3 EMT3 -50V DTA123EM DTA123EE (SC-105AA) SOT-416(SC-75A) UMT3 l Features 1) Built-In Biasing Resistors, R1 = R2 = 2.2kΩ

xds pnp

Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23

Contextual Info: DTC023J series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Builtin Transistors l Outline Parameter VCC Value 50V IC(MAX.) 100mA R1 R2 2.2kΩ 47kΩ l Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

TF256

Contextual Info: Ordering number : ENA1616B TF256 N-Channel JFET http://onsemi.com 20V, 140 to 450 A, 1.7mS, USFP Features • • • • • • High gain : GV=2.7dB typ VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz Ultrasmall package facilitates miniaturization in end products [1.0mmx0.6mm×0.27mm (max 0.3mm)]

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

DSA0037427

Abstract: SEMH10
Contextual Info: SEMH10 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ)

pnp array

Abstract: SEMD10 DSA0037426 DSA003742
Contextual Info: SEMD10 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=2.2kΩ, R2=47kΩ)

FJX3013R

Abstract: FJX4013R
Contextual Info: FJX3013R FJX3013R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJX4013R 2 1 SOT-323 1. Base 2. Emitter 3. Collector

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2213 SWITCHING APPLICATION B ias R esistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R 1=2.2K£1, R2=47K£1) • C om plem ent to KSR 1213 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: FJN3313R FJN3313R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to FJN4313R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor

Contextual Info: KSR1013 KSR1013 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR2013 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit

Contextual Info: KSR1113 KSR1113 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =2.2KΩ, R2=47KΩ) • Complement to KSR2113 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR2213 KSR2213 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR1213 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2013 SWITCHING APPLICATION B ias R esistor Built In T O -92 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R1=2.2K£1, R2=47K£1) • C om plem ent to KSR 1013 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

KIA6225S

Abstract: KIA6225P G22K KIA6 3K10K
Contextual Info: SEMICONDUCTOR KIA6225P/S TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DUAL PRE-AMPLIFIER W D High voltage gain : GVO=100dB Typ. at f=1kHz. G Excellent channel separation and high ripple rejection. : CHsep=65dB(Typ.) P d (f=10kHz, Rg=2.2k L H Dual pre amplifier for car or home stereo use.

BCR553

Contextual Info: BCR553 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR08PN

Abstract: VPS05604
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

BCR158

Abstract: BCR158F BCR158L3 BCR158T SEMB10
Contextual Info: BCR158./SEMB10 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=47kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

PWR4522

Abstract: THERMAL Fuse RESISTOR
Contextual Info: PL IA NT CO M *R oH S Features Applications • Fuses safely at 220/240 mains voltage ■ White goods ■ Resistance values as high as 2.2K ohms ■ Inverters ■ Flameproof silicone coating ■ Lighting ■ Low TCR ■ Metering ■ RoHS compliant* PWR4522 Fusible Power Resistors

BCR108W

Abstract: VSO05561
Contextual Info: BCR108W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323

A1906

Abstract: SC-106A tf262 IT16225 TF262TH
Contextual Info: TF262TH Ordering number : ENA1906 SANYO Semiconductors DATA SHEET TF262TH N-channel Silicon Juncton FET For ECM use Features • • • • • Low output noise voltage : VNO= -112dB typ. VCC=2V, RL=2.2kΩ, Cin=5pF Ultrasmall package facilitates miniaturization in end products : 1.4mm x 1.2mm × 0.34mm

FJY3013R

Abstract: FJY4013R
Contextual Info: FJY3013R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=2.2KΩ, R2=47KΩ • Complement to FJY4013R Eqivalent Circuit C C S13 E B E B SOT - 523F Absolute Maximum Ratings *

GAAS FET AMPLIFIER for optical receiver

Abstract: transimpedance amplifier F0100504B F0321818M F0832483T FET differential amplifier circuit
Contextual Info: F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise typ.6pΑ/√Ηz@100MHz Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range