1Z110 Search Results

Contextual Info: 1Z110 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage110 @I(Z) (A) (Test Condition)3.0m Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.300 Temp Coef pp/10k Maximum Operating Temp (øC)150õ Package StyleDO-15

smd 1gw

Abstract: diode Z47 1ZB36 1ZB20 zener U1DL49 1ZB20 6B4B41 FAST RECOVERY DIODE 200ns 2a 1B4B41 J2C42
Contextual Info: a SELECTOR GUIDE The following products are recommended for use in any new circuitry designs. General Purpose Rectifiers —> Peak Repetitive Reverse Voltage 600V 1000V 1S 1887 1S 1888 1S 1830 S5277B S5277G S5277J S5277N D O -41S S5566B S5566G S5566J S5566N

1Z51

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s

Z6 ZENER DIODE

Abstract: Z6 DIODE LZ13A 2-1Z390 21Z3 zener diode IN 825 1Z18A zener diode si 18 LZ6.8 z390
Contextual Info: TOSHIBA 1Z 6 . 2 - 1Z390,1Z 6 . 8 A - 1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1 Z 6.8 A -1Z 3 0 A CONSTANT VOLTAGE REGULATION Unit in mm TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation :

1Z150

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs

1Z12

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V

1ZB36

Abstract: 2z47 1J4B41 1B4B42 100L6P43 1Z16 6G4B41 3Z150 30L6P45 10GL2CZ
Contextual Info: 1 PART NUMBER INDEX P art No. 05B4B48 05G4B48 05GU4B48 05J4B48 05NH45 05NH46 05NU41 05NU42 0R8GU41 100G6P43 100L6P43 100Q6P43 100U6P43 10B4B41 10DL2C41A 10DL2C48A 10DL2CZ47A 10FL2C48A 10FL2CZ47A 10G4B41 10GL2CZ47A 10GWJ2C48C 10GWJ2CZ47C 10J4B41 10JL2CZ47 10JWJ2CZ47

1ZB36

Abstract: DIODE 1zb36 1ZB36 zener zener 150v 1w 120V 1W Zener Diode 3Z27 DIODE 1ZB20 zener zener diode 6.2v 1w ZENER 68V 1W 1Z150
Contextual Info: POWER ZENER Diode -> Power Dissipation F2.L3 Zener Voltage «- 1W Pacakae DO-41 SS DO-15 3W 5W DO-15L DO-201 AD _ 6.2V 1Z6.2 6.8V 7.5V 1Z6.8, 1Z6.8A 1ZB6.8 1Z7.5, 1Z7.5A 1ZB7.5 8.2V 1Z8.2, 1Z8.2A 1ZB8.2 9.1V 1Z9.1, 1Z9.1A 1ZB9.1 10V 1Z10, 1Z10A 1ZB10 11V 1Z11, 1Z11A

1Z16

Abstract: 1Z10 1Z11 1Z12 1Z13 1Z15 1Z18 1Z20 1Z22 1Z4.7
Contextual Info: SIYU R 1Z Series 特征 Features DO-41 Glass max. 0.82 •反向漏电流小。 Low reverse leakage ·齐纳击穿阻抗低。Low zener impedance ·最大功率耗散1000mW。 Maximum power dissipation of 1000 mW min. 27.5 ·高稳定性和可靠性。 High stability and high reliability

1Z27A

Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z13A 1Z390
Contextual Info: BL GALAXY ELECTRICAL ZENER DIODES 1Z6.2 - - - 1Z390 POWER DISSIPATION: 1.0 W FEATURES DO - 15 Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage

1Z10

Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs

Contextual Info: TOSHIBA 1Z6.2~1Z390,1Z6.8A~1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1Z6.8A-1Z30A Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS & Average Power Dissipation : P=1W Peak Reverse Power Dissipation : P r s M“ 200W at tw = 200/¿s

Contextual Info: SIYU R 1Z Series 特征 Features DO-41 Glass max. 0.82 ・反向漏电流小。 Low reverse leakage ・齐纳击穿阻抗低。Low zener impedance ・最大功率耗散1000mW。 Maximum power dissipation of 1000 mW min. 27.5 ・高稳定性和可靠性。 High stability and high reliability

zener diode 1NU 9F

Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Contextual Info: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:

1Z10

Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

DO-41S

Abstract: DO-15L 1Z220 U1DL49 CRH01 1FWJ43N CMZ24 U05NH 2z16 CRS01
Contextual Info: [ 4 ] 推奨品種一覧表 [ 4 ] 推奨品種一覧表 <新規設計時の推奨品 新規設計時の推奨品> 新規設計時の推奨品 一般整流ダイオード ピーク繰り返し逆電圧 パッケージ 100 V 0.7 A 平均順電流 1A 400 V 600 V

zener diodes 10z6.2

Abstract: 1S265 Toshiba 02BZ2.2 1S2452-1S2454 10Z15-M 02BZ2.2 05Z30 10Z12-M 05Z16L 02z18a
Contextual Info: TOSHIBA {DISCRETE/OPTO} 3e] ZENER DIODES \ _ 9097250 TOSHIBA <DI S C R E T E / O P T O > . “ 39 C 0 2 2 2 1 I ZENER DIODES Vz Typical Value 2 5 0 mW Type " 0.5 W Type 1 W Type 1W Type {Plastic Mold Type {Metal Typ« DE • TDTTESO □□□2221 1 I ’

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

1Z16

Abstract: 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A
Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage

1z390

Contextual Info: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage

zener VZ 1.2 v

Abstract: zener diode IN 825 zener diode 561 1Z150 351 zener diode toshiba zener LZ47 0424g lZ33 1Z33
Contextual Info: b7 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA D eT | I C H T S S D DI S C R E T E / O P T O 1 Z 3 3 -1 Z 3 9 0 67C 09387 OOOTBñ? 4 D T"//“/3 Silicon Diffused Type Zener Diode Unit in mm Toshiba Zener Diode 1Z390 series are designed for surge voltage suppressors to protect the voltage sensitive

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published