1T22 Search Results

DO250

Contextual Info: LT-3/94 DtfD EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - 1T250 DO220 - DO250 FREQUENCY-VOLTAGE LINEAR TUNING electronics, The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7;1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide

Contextual Info: LT-3/94 electronics EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - XT250 D022D - D0250 FREQUENCY-VOLTAGE LINEAR TUNING inc. - X " — 1— v. D024I 's \ N K323Í — In axial leaded glass DO-7, in the surface mount MSI Case 1M alumina substrate with epoxy encapsulation or in the surface mount MSI-123

Capacitance Varactor Diode

Abstract: MSI Electronics 1M250 D0224 1T25 1T220 D0234 D0246 1M220 1M224
Contextual Info: LT-3/94 D vD SD EVAR TM EXPONENTIAL VARACTOR SERIES for electronics FREQUENCY-VOLTAGE LINEAR TUNING 1M220 - 1M250 1T220 - XT250 D0220 - D025Q inc. 100 The MSI Series 220 EVAK exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide

DO-220

Abstract: D0236 Capacitance Varactor Diode DO220 1H250 1T246 1t234 1X220 D0234 D0250
Contextual Info: r LT-3/94 EVAR EXPONENTIAL VARACTOR for 1M220 - 1H250 1T220 - 1T250 DO220 - D0250 FREQUENCY-VOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide band tuning applications.

Contextual Info: O^OSD SERIES EVAR EXPONENTIAL VARACTOR 1M220 - 1M250 1T220 - 1T250 D0220 - D0250 fo r FREQUENCY-VOLTAGE LINEAR TUNING electronics^ Th e MSI Series 220 EV AR exponential varactor tuning diodeB feature a 7:1 mi ni mu m capa ci ta nc e tuni ng ratio from 0.5 to 10 volts for wi de

D0236

Abstract: FM modulators
Contextual Info: LT-3/94 EVAR EXPONENTIAL VARACTOR SERIES for 1H220 - 1M250 1T220 - 1T250 DO220 - D0250 FREQUENCYVOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volt for wide

zck m1

Abstract: SIEMENS BST ABIAP zck d15 D1113 SIEMENS BST h 05 90 SIEMENS SCR BST smd marking mop smd marking T22 Siemens pulse sequence
Contextual Info: SIEM ENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fc K 166 125 125 125 MHz latency 3 2 3 3 - ÍCK3 6 8 7 8 ns ^AC3 5.5 5.5 5.5 6 Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

Contextual Info: MODELS M, C, T NTC Thermistors C o a te d FEA TU R ES • Small size - conformally coated • Wide resistance range • Available in 11 different R-T curves • Configured for standard PC board mounting or assembly in probes STANDARD ELECTRICAL ERECtFICATIONE and DIMENSIONAL CONFIGURATIONS

Contextual Info: THERMISTORS TYPE X , M , C , F & T C o a te d T h e rm is to rs t FEATURES : Lead Diameter P • Small size—conformal coated • W ide resistance range X, M, C, F and T Styles • Available in 8 different R-T curves are conformally coated, leaded thermistors for

Contextual Info: MODELS M, C, F, T, B NTC Thermistors Coated FEATURES • Small size - conformal coated • Wide resistance range • Available in 11 different R-T curves • Configured for standard P.C. board mounting or assembly in probes STANDARD ELECTRICAL SPECIFICATIONS and DIMENSIONAL CONFIGURATIONS

7M500

Contextual Info: Models M, C, T Vishay Dale NTC Thermistors Coated FEATURES • Small size - conformally coated. • Wide resistance range. • Available in 11 different R-T curves. • Configured for standard PC board mounting or assembly in probes. STANDARD ELECTRICAL SPECIFICATIONS AND DIMENSIONAL CONFIGURATIONS

1V100RK

Abstract: 1T330 1Z56 N2400 1C39RK N5600 1p39 1V75RK N220 N3300
Contextual Info: 1002 Reader's 6/21/99 11:36 AM Page 29 Leaded Temperature Compensating Capacitors • ■ ■ Available in NPO through N5600 dielectrics Specifically designed temperature coefficient characteristic curve Used in high shock and cross over applications Specifications

C704DD7B

Abstract: 1Q0010
Contextual Info: T R D A' A I Q U I N T S E M I C O N D U C T O R , I N C C 0 M M U N I C A î I 0 'I TX, GA9103 Data Comm 265Mbaud Fiber Channel ENDEC Features • TriQuint's GA9103 is one of the three devices of the FC—265 chip set designed to support the requirements of Fiber Channel Standard

ST162t

Abstract: SA1000 2S711 SE6020A SE6020 T05 Package transistor t05 BC412 TC236 NS435
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

transistor 2SC114 replacement

Abstract: 2SC114 transistor usaf516es047m 2SC114 usaf517es060m transistor 2SC114 BC175 transistor usaf516es048m 2sc107 usaf517es060
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

1t22

Abstract: 1T21
Contextual Info: Triple CRT Driver CORPORATION Preliminary Product Information CVA2406T DESCRIPTION FEATURES • • • Rise/Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0ns Swing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65VP-P

Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

1M300

Abstract: 8M3002 1C1001 1M1002 12M1004 7M5002 4T1003 1C4001 2C1000 1C6001
Contextual Info: Models M, C, T Vishay Dale NTC Thermistors Coated FEATURES • Small size - conformally coated. • Wide resistance range. • Available in 11 different R-T curves. • Configured for standard PC board mounting or assembly in probes. STANDARD ELECTRICAL SPECIFICATIONS AND DIMENSIONAL CONFIGURATIONS

1V100RK

Abstract: 1P75 1r33 1u100 1C39RK 1V120
Contextual Info: E Republic Electronics Corp. Ceramic Capacitors for over 45 years TEMPERATURE COMPENSATING CAPACITORS • NPO through N5600 Specifications Electrical Specifications Capacitance: Measured at 1 MHz, 25°C Capacitance Tolerance: Last letter o f part number. B

SIEMENS bst 61

Abstract: SPP03942
Contextual Info: S IE M E N S Overview • HYB 39S13620TQ-6/-7/-8 Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - *CK3 6 8 7 8 ns ?AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

DE275-102N06X2A

Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz
Contextual Info: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate