1SV16 Search Results

1SV160

Contextual Info: 1SV160 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Receiver • Small package. • Low series resistance: rs = 0.7 Ω typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage

1SV162

Abstract: C25V
Contextual Info: TOSHIBA { D I S CR ET E/ OP TO} 9097250 TOSHIBA b7 DISCRETE/OPTO D eT| TOTTSSD 0 0 D ‘ìB7fl 3 ^|~ ' ~ 67C 09378 Silicon Epitaxial Planar Type 1SV162 Variable Capacitance Diode Unit in nnn TV TUNER, VHF BAND ELECTRONIC TUNING APPLICATIONS. FEATURES: . High Capacitance Ratio

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV160 Unit in mm AFC A P P LIC A T IO N FOR FM RECEIVER Small Package. Low Series Resistance + 0 25 1. 5 - 0 ] 5 . rs = 0.7fi Typ. QEE J M A X IM U M R ATIN G S (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV161

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV161 Unit in mm C A TV T U N IN G . • • • • High Capacitance Ratio : G2 V ^ C 2 5 V = 10.5 Typ. Low Series Resistance : rs = 0.6fl (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

1SV162

Contextual Info: TOSHIBA { D IS CR ETE/ OP TO} 9097250 TOSHIBA b7 DISCRETE/OPTO D eT | TOTTSSD 0 0 D ‘ìB7fl 3 " j ” ' ~ o T r o U f- 67C 09378 Silicon Epitaxial Planar Type 1SV162 Variable Capacitance Diode Unit in nnn TV TUNER, VHF BAND ELECTRONIC TUNING APPLICATIONS.

Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SV160 U nit in mm AFC APPLICATIO N FOR FM RECEIVER • • Small Package. Low Series Resistance : rs = 0.7H Typ. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range

1SV161

Contextual Info: 1SV161 SILICON EPITAXIAL PLANAR TYPE CATV TUNING. Unit in mm + CU 5 1.5-ai 5 dc3 FEATURES: 4- I . High Capacitance Ratio : C2V/C25V=10.5 Typ. . Low Series Resistance : rs=0.6n (Typ.) X < . Excellent C - V Characteristics, and small Tracking Error. a p w

1SV160

Contextual Info: 1SV160 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Receiver • Small package. • Low series resistance: rs = 0.7 Ω typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

Contextual Info: 1SV160 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Receiver • Small package. · Low series resistance: rs = 0.7 Ω typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage

1SV16

Abstract: 1SV160
Contextual Info: 1SV160 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV160 AFC Application for FM Receiver • Small package. · Low series resistance: rs = 0.7 Ω typ. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage

Contextual Info: TOSHIBA 1SV160 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 6 0 AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance : rç = 0.7ft Typ. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage Junction Temperature

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

3SK121

Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Contextual Info: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

Contextual Info: 900 MHz SILICON MMIC DOWN CONVERTER UPC1686G UPC1686GV INTERNAL BLOCK DIAGRAM FEATURES • WIDE-BAND OPERATION: DC to 890 MHz • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation • BALANCED AMPLIFIER FOR VOLTAGE CONTROLLED OSCILLATORS: Up to UHF Frequency

1SV160

Contextual Info: 1SV 160 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE AFC APPLICATION FOR FM RECEIVER Small Package. Low Series Resistance SILICON EPITAXIAL PLANAR TYPE 1 S V 1 60 Unit in mm : rs = 0.70 Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature

Contextual Info: NEC UPC1687B UPC1687G 900 MHz SILICON MMIC DOWN CONVERTER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE BF08 • WIDE-BAND OPERATION: DC to 890 MHz • SMALL PACKAGE 1.27 ± 0.1 1 27 1.27 ± 0.1 ± 0.1 • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

Contextual Info: NEC 900 MHz MIXER, OSCILLATOR SILICON MMIC UPC1685B UPC1685G OUTLINE DIMENSIONS FEATURES Units in mm • W ID E-BAN D OPERATION: DC to 890 MHz OUTLINE BF08 • SMALL PACKAGE 7.0±0.5 • • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

diode A2 12

Abstract: 1SV163 PD6465 uPD6464
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1SV164

Abstract: 1SV191 UPC1686 UPC1687 UPC1687G UPC1687G-E1
Contextual Info: 900 MHz SILICON MMIC DOWN CONVERTER FEATURES UPC1687G CONVERSION GAIN AND NOISE FIGURE vs. FREQUENCY 16 • WIDE-BAND OPERATION: DC to 890 MHz Conversion Gain, CG dB • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation • BALANCED AMPLIFIER FOR VOLTAGE

Contextual Info: 900 MHz MIXER, OSCILLATOR SILICON MMIC FEATURES_ UPC1685G CONVERSION GAIN vs. FREQUENCY • WIDE-BAND OPERATION: DC to 890 MHz Conditions; V c c • 5 V • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation