1SS396 Search Results

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS396 TOSHIBA TOSHIBA DIODE 1SS39 6 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING 0.5 2 5 0.3 + 0.25 + . - Low Forward Voltage Low Reverse Current Small Package V f 3 —0.54V (Typ.) I r = 5/¿A (Max.) SC-59 ,1.5-0.15

SMD MARKING T9

Abstract: marking t9 sot-23 1SS396 marking t9
Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS396 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.23V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max.) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

1SS396

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max.) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max.) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

1SS396

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max.) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max.) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

1SS396

Abstract: TO-236MOD 000707EAA
Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max.) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)

TO-236MOD

Abstract: 1SS396 SP-150
Contextual Info: 1SS396 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS396 ○ 低電圧高速スイッチング用 : : : z 外形が小さい。 z 順方向電圧が低い。 z 逆電流が小さい。 単位: mm SC–59 VF 3 = 0.54V (標準)

1SS396

Abstract: i300n
Contextual Info: TOSHIBA 1SS396 TOSHIBA DIODE 1 SS3 9 6 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING +0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package VF 3 - 0.54V (Typ.) I r = 5/¿A (Max.) SC-59 -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: Product specification 1SS396 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.23V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max.) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5

Contextual Info: 1SS396 TO SHIBA TOSHIBA DIODE 1 SS396 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING + 0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package + 0.25 .1.5-0.15 VF 3 = 0.54V (Typ.) Ir = 5/*A (Max.)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

transistor t348

Abstract: transistor t349 transistor t342 t326 Transistor GRM40F104Z50PT diode t318 t324 transistor t345 diode T207 DIODE t349 diode
Contextual Info: MF1556-02 On-The-Go Device Controller LSI S1R72005 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

transistor t348

Abstract: transistor t349 t345 diode transistor t342 T328 GRM40F104Z50PT diode t318 S M T209 ttl 7436 T203 DIODE
Contextual Info: 82C871 USB 2.0 82C871 On-The-Go Controller Data Book 912-2003-001 Revision 1.1 25 March 2003 Rev.1.1 OPTi Technologies, Inc. Page 1 Copyright Copyright 2003 OPTi Technologies, Inc. All rights reserved. No part of this publication may be reproduced, transmitted,

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード