1SS39 Search Results

Contextual Info: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)

1SS393

Contextual Info: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage

1SS391

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15

1SS393

Contextual Info: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Contextual Info: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 1SS393 TOSHIBA TOSHIBA DIODE 1 SS393 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC-70 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance

Contextual Info: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

Schottky Diode Marking sc-70

Contextual Info: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic

1SS390

Contextual Info: 1SS390 SURFACE MOUNT PIN DIODE VOLTAGE POWER 35 Volts 200 mW FEATURES Very low series resistance at 100MHz 0.45 Ω typical@IF=2mA Low capacitance (0.8pF typical@VR=6V) Surface mount package ideally suited for automatic insertion Pb free product are available : 99% Sn above can meet RoHS

1SS397

Contextual Info: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance

1SS399

Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min.) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance

Contextual Info: 1SS390 Diodes Band switching diode 1SS390 zApplication High frequency switching zExternal dimensions Unit : mm 0.8±0.05 zLead size figure (Unit : mm) 0.12±0.05 0.8 1.7 1.2±0.05 zFeatures 1) Ultra small mold type. (EMD2) 2) High reliability 1.6±0.1 0.6

Contextual Info: 1SS390 Diodes Band switching diode 1SS390 zApplication High frequency switching zExternal dimensions Unit : mm 0.8 0.12±0.05 0.6 0.8±0.05 zLead size figure (Unit : mm) 1.6±0.1 1.2±0.05 1.7 zFeatures 1) Ultra small mold type. (EMD2) 2) High reliability

1SS395

Contextual Info: TOSHIBA 1SS395 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23V (Typ.) @Ijr = 5mA 1.25 ± 0.1 3 oo + I - -EB 2 M A X IM U M RATINGS (Ta = 25°C)

1SS399

Contextual Info: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance

1SS394

Contextual Info: 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM

1SS390

Contextual Info: 1SS390 Diodes Band switching diode 1SS390 !External dimensions Units : mm !Applications High frequency switching CATHODE MARK 1.6±0.1 1.2±0.05 !Features 1) Extremely Small surface mounting type. (EMD2) 2) High reliability. !Construction Silicon epitaxial planar

1SS394

Contextual Info: 1SS394 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS394 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA

Contextual Info: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating