1SS36 Search Results

Contextual Info: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 1SS368 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS368 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Vf 3 - 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.)

Contextual Info: 1SS361F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361F Ultra High Speed Switching Applications Unit in mm z Small package : 1608 Flat lead z Excellent in forward current and forward voltage characteristics : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 0.4 Absolute Maximum Ratings (Ta = 25°C) 1 0.4

Contextual Info: Product specification 1SS366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 mounting and permits 1SS366-applied equipment to be made smaller. Small interterminal capacitance. +0.1 1.3-0.1 +0.1 2.4-0.1 Series connection of 2 elements in a very small-sized package facilitates high-density

1SS367

Contextual Info: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage

Contextual Info: 1SS364 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS364 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Or = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SHIBA 1SS361 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS361 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm 1 .6 Í0 .2 • Sm all Package • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Sm all Total Capacitance , 0 . 8 ± 0.1

Contextual Info: 1SS360F T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F ULTRA HIGH SPEED SWITCHING APPLICATIONS Small Package Excellent in Forward Current Characteristics Fast Reverse Recovery Time Small Total Capacitance : 1608 Flat Lead and Forward Voltage

Marking Code "s3" diode

Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

ISV80

Abstract: 1S2186 1SS238 1SS241 1SS364 1SV26 1SV27 1SV28 1SV34 1SV35
Contextual Info: 176 - - fe * m Vr r m £ V 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 ÄS ÄS ÄS 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 am um BM 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1S V 121 1S V 122 1SV128 1SV156 1 S V 157 1 SV 172 1 S V 178

1SV196

Abstract: 1sv128 1SV156 ISV80 MA555 1S2186 1SS238 1SS241 1SS364 1SV26
Contextual Info: - 176 - m £ 1S 218 6 ISSI 55 1SS238 1SS241 1SS364 1SV26 1 SV 2 7 1SV28 1SV34 1SV35 1SV36 1 SV 3 7 1SV46 1SV47 1SV48 1SV48-1 1SV48-2 1SV65 1SV66 1SV77 1SV80 1SV99 1SV121 1SV122 1SV128 1SV156 1 SV157 1 SV 172 1 SV178 1SV187 1SV195 1SV196 1SV233 1SV234 1SV246

X3-DFN0603-2

Contextual Info: 1SS361LP3 ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • • • • • • • Case: X3-DFN0603-2 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0

1ss368

Contextual Info: 1SS368 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)

1SS360F

Contextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm Small package : 1608 Flat lead Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.)

Contextual Info: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.)

1SS361FV

Contextual Info: 1SS361FV 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS361FV ○ 超高速スイッチング用 単位: mm 項目 せ ん 頭 せ ん 平 均 許 ジ 単位 VRM 85 V 電 圧 圧 VR 80 V 頭 順 電 流 IFM 300* mA 整 流 電 流

1SS362FV

Contextual Info: 1SS362FV 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS362FV 単位: mm せ ん 頭 せ ん 平 均 サ ジ 単位 VRM 85 V 電 圧 VR 80 V 頭 順 電 流 IFM 300* mA 整 流 電 流 IO 100* mA IFSM 1* A 電 ー 定格 逆 逆

1SS361CT

Contextual Info: 1SS361CT TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361CT Ultra High Speed Switching Application Small package z Low forward voltage: z Fast reverse recovery time: trr = 1.6 ns typ. 0.05±0.03 Absolute Maximum Ratings (Ta = 25°C) Characteristic Rating

S3 marking DIODE

Abstract: 1SS367
Contextual Info: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol

Contextual Info: 1SS361LPH4 SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • Fast Switching Speed • • Ultra-Small Leadless Surface Mount Package 1.0 x 0.6mm • • Ultra-Low Profile Package (0.4mm) • Low Forward Voltage (Typ of 0.9V) • Moisture Sensitivity: Level 1 per J-STD-020

1SS360F

Contextual Info: 1SS360F TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.)

SS369

Contextual Info: 1SS369 TOSHIBA TOSHIBA DIODE 1 SS3 69 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Low Forward Voltage Low Reverse Current : Vp 3 = 0.54V (TYP.) *T ti = * „ A ÍM A Y 1 0.8 ±0.1 n MAXIMUM RATINGS (Ta = 25°C)