1RF2 Search Results

PICO base station

Abstract: transistor 386 PIN DIAGRAM signal path designer RF2123
Contextual Info: BFB MICRO-DEVICES "•* « - > 1RF2123 HIGH POWER AMPLIFIER Typical Applications • 915 MHz ISM Band Applications Commercial and Consumer Systems • Driver stage for GSM Base Stations Portable Battery Powered Equipment • Base Station Equipment Product Description

IRF232

Abstract: IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF233 varo diode diode oa 90
Contextual Info: Standard Power MOSFETs- IRF220, IRF221, IRF222, IRF223 I q . O BAIN CU RR EN T AMPERES Tc . CASE TEM PERATU RE <°C) F ig. 112 — T y p ic a l O n-R esistance V s. D ra in C u rre n t 20 40 Fig. 13 — M a x im u m D ra in C u rre n t V s. Case T e m p e ra tu re

1RF250

Abstract: IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD
Contextual Info: MOTOROLA SC X S T R S /R 14E D I F b 3 ti7 E 5 4 QDÔTbLi fc, | MOTOROLA •a SEM ICONDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 Pow er Field E ffect Transìstor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for low

ir 222

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

N555N

Abstract: LDR Cds RF221 250M IRF220 IRF221 IRF222 IRF223
Contextual Info: 01 3875081 G E SOLID D E ~ | 3Ö7SDÖ1 STATE Standard Power MOSFETs 0 1E ODlflETT 18279 “ File N u m b e r 1 56 7 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N EL EN H A N C E M E N T M OD E 4.0A and 5.0A, 150V-200V

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

Contextual Info: ispPAC 80 In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 750kHz) — Continuous-Time Fifth Order Low Pass Topology

murata npo

Abstract: Murata
Contextual Info: FPGA Power Module 12V input, 8 Outputs at 2A to 8A Reference Design PRD1366 FEATURES Low cost Meet’s Specification for AVNET Mini Module Plus for Xilinx 7 series Kintex FPGA Hard wired turn on sequence High Efficiency >93% at full load 12 V input +/-10%

pac81

Abstract: PG1AB C213 C231 C435
Contextual Info: ispPAC81 In-System Programmable Analog Circuit October 2001 Data Sheet Functional Block Diagram Features • In-System Programmable ISP Analog • • • • • • Instrument Amplifier Gain Stage Precision Active Filtering (10kHz to 75kHz) Continuous-Time Fifth Order Low Pass Topology

JR 200 RF TRANSMITTER

Abstract: TX 433 N bx 433MHz VCO FM PLL
Contextual Info: H bÌBÌ MICRO DEVICES RF2926 4 3 3 /8 6 8 /9 1 5 MHZ FM/AM/FSK/ASK/OOK DUAL CONVERSION TRANSCEIVER T y p ic a l A p p lic a tio n s • Wireless Meter Reading • Wireless Data Transceiver • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems

C213

Abstract: C231 C435 PG1AB
Contextual Info: In-System Programmable Analog Circuit October 2001 Data Sheet Features Functional Block Diagram • In-System Programmable ISP Analog • • • • • • Instrument Amplifier Gain Stage Precision Active Filtering (10kHz to 75kHz) Continuous-Time Fifth Order Low Pass Topology

IRF 850

Abstract: IRf 92 0151 623 13a 8Q DIODE irf640 IRF340 IRF350 IRF440 IRF450 IRF740
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\Wi i v i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

irf 111

Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

irf 80 n

Abstract: irf 30A IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 VNP002A
Contextual Info: Ü Ü A C D ^ U /C D M i v i a D r /\W i iv iv ^ i v T T k iv r i i i i i v t iv u v iw i C A lA A ^ /\r f^ .n \M é g ^ i^ v iv i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: BV qss Volts 4 5 0 -5 0 0 TO-3 TO-220 S ilic o n ix

irf113

Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
Contextual Info: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id

irf250 dc motor

Abstract: IRF250 ic data
Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a

Contextual Info: ispPAC 80 In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 750kHz) — Continuous-Time Fifth Order Low Pass Topology

IRF254

Contextual Info: SI H ARRIS IRF254, IRF255 IRF256, IRF257 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 22A and 20A , 2 75 V - 250V BOTTOM VIEW • r o s o n = 0 . 1 4 i l a n d 0 . 1 7 0 SOURCE • S in g le P u ls e A v a la n c h e E n e rg y R a te d

Contextual Info: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf*234 n

Contextual Info: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =

TMS 1600

Contextual Info: ispPAC 80 TM In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 500kHz) — Continuous-Time Fifth Order Low Pass Topology

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

3849

Contextual Info: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V

C213

Abstract: C231 C435
Contextual Info: ispPAC 80 In-System Programmable Analog Circuit Features Functional Block Diagram • IN-SYSTEM PROGRAMMABLE ISP ANALOG — Instrument Amplifier Gain Stage — Precision Active Filtering (50kHz to 750kHz) — Continuous-Time Fifth Order Low Pass Topology