IRF255 Search Results

IRF254

Abstract: IRF255 IRF256 IRF257 IIRF257 IRF25
Contextual Info: Rugged Power MOSFETs IRF254, IRF255 IRF256, IRF257 File Number 2300 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDsioni = 0.14 O and 0.17 Q n -c h a n n e l e n h a n c e m e n t m ode U Features: • Single pulse avalanche energy rated

IRF254

Contextual Info: SI H ARRIS IRF254, IRF255 IRF256, IRF257 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 22A and 20A , 2 75 V - 250V BOTTOM VIEW • r o s o n = 0 . 1 4 i l a n d 0 . 1 7 0 SOURCE • S in g le P u ls e A v a la n c h e E n e rg y R a te d

Contextual Info: IRF255 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D)12 @Temp (øC)100 IDM Max (@25øC Amb)80 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

irf244

Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
Contextual Info: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s

irf113

Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
Contextual Info: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

irf113

Abstract: IRF224 buz90 buzh F133 IRF035 IRF034 IRF123
Contextual Info: - 250 T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E

IRF254

Contextual Info: ^ n a s? ! 2 J H A R R oDsaiafl I • has I R F S 2 5 / R F 2 , I R F 4 5 6 , 2 5 5 / R F 2 5 7 N-Channel Power MOSFETs Avalanche Energy Rated A u g u st 1991 Package Features T O -2 0 4 A E • 22A and 20A, 275V - 250V BOTTOM VIEW • rDS on = 0-14H and 0 .1 7 ii

idm 73

Abstract: IRF244
Contextual Info: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation

irfp254

Contextual Info: N-CHANNEL POWER MOSFETS IRFP254/255 FEATURES • • • • • • • • Lower Ros <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRF224

Abstract: IRF154 N IRF034 IRF035 IRF123 IBF220
Contextual Info: - 250 - T a = 2 5 <1C f t m € tt Vd s Vg s l: 1D SS Jg s s Pd Id Vg s th) 4- Vd g If (V) * /CH * /CH (A) (W) (V) (nA) (V) C m A) Vd s (V) (V) Id (mA) (V) 25 T O - 2 2 0 A B 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E 25 10 9. 3 18 13 0 0 * 650* 100* 25 T O - 2 0 4 A E

IRF224

Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
Contextual Info: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250

irf113

Abstract: 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Ig s s Pd Id * /CH Vd g a t§ <Ta=25^C V g s th) Id s s rain * /CH Id nA) & F os(on) Vd s = Vg s max ft & Id (on) Ciss g fs Coss ft Crss Vg s =0 (max) *typ V g s (0) (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ)

1RF350

Abstract: 1RF320 irf244 IRF242 IRF243 IRF245 IRF252 1RF450 Siliconix
Contextual Info: - ft A gj £ *± Vd s or € £ Vg s Pd Id m a t § <Ta=25^C Ig s s Vg s Id s s th) ft & F os on) Vd s = & I d (on) Coss Ciss g fs * /CH rain * /CH Vg s = 0 (*typ) (*typ) (*typ) Id *typ Vg s *typ Id (max) (max) (max) Vd s (A) (A) (V) (S) (A) (pF) (pF) (pF)

irf244

Abstract: IRF242 IRF243 IRF245 IRF252
Contextual Info: - ft A gj £ *± Vds or € £ Vgs Pd Id * /CH Vdg a t§ <Ta=25^C I gss rain * /CH Vg s * V) (V) (W) (A) Vgs th) I dss (nA) (V) (H A ) (V) (V) (V) Id (nA) ft & I d (on) Coss Ciss g fs ft Crss Vgs =0 (max) *typ (0 ) Vg s (V) *typ (A) Id (A) Vgs (V) *typ (S)

IRFP237

Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
Contextual Info: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13

ec a063

Abstract: IRF254 6710 mosfet
Contextual Info: HE D I 4flSS4S2 OCICHIEO 7 | Data Sheet No. PD-9.589A INTERNATIONAL R E C T IF IE R T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRF254 IRF25S HEXFET TRANSISTORS iJ IM-CHAIMIMEL 250 Volt, 0.14 Ohm, HEXFET TO-204AE TO-3 Hermetic Package

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog