1N6641US JANTXV Search Results

Contextual Info: • 1N6639US THRU 1N6641US AVAILABLE INJAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640US JANTX

Abstract: 1N6639US 1N6640US 1N6641US IN6639US 1N6641US JANTXV
Contextual Info: 1N6639US 1N6640US 1N6641US • 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640US JANTXV

Abstract: in6639us
Contextual Info: •1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 >SWITCHING DIODES 1N6639US 1N6640US 1N6641US • NON-CAVITY GLASS PACKAGE ■METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6639US

Abstract: 1N6640US 1N6641US
Contextual Info: • 1N6639US THRU 1N6641US AVAILABLE IN JAN, PER MIL-PRF-19500/609 1N6639US 1N6640US 1N6641US JANTX, JANTXV AND JANS • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640US

Contextual Info: 1N6639US THRU 1N6641 US AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6639US PER MIL-PRF-19500/609 1N6640US SWITCHING DIODES 1N6641US NON-CAVITY GLASS PACKAGE METALLURGiCALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N6640US

Abstract: 1N6641 1N6640 JANTX 1N6640US JANS 1N6639 JANTXV 1N4150 1N6639 1N6639US 1N6640 1N6641US
Contextual Info: 1N6639 1N6640 1N6641 FEATURES • Available in axial leaded and surface mount configurations • Ultra Fast Reverse Recovery Time • Very low Capacitance • Metallurgically Bonded • Non-cavity glass package • Available as JANTX, JANTXV and JANS per MIL-S-19500/609

003S5

Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING

609g

Abstract: 1N4150 metallurgically JANS1N4150UR-1 1N6640 1N6641 JANS1N6640US 1N6640US 1N6639 1N6639US 1N6641US
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2010. MIL-PRF-19500/609G w/AMENDMENT 1 3 June 2010 SUPERSEDING MIL-PRF-19500/609G 8 July 2009 PERFORMANCE SPECIFICATION SHEET

DO-213AA 1N4148

Abstract: sem 5020 MLL4148-1 JANTXV1N4148UR-1 LT 7247 lt 7246 1N4148 DL-35 PACKAGE microsemi DL4448 JANTX1N4148
Contextual Info: Signal/General Purpose Diodes Part Number JANTXV1N4454-1 JANTXV1N4454-1 JANTXV1N4454UR-1 ESA1N4150-1 ESA1N4151-1 BAS16 1N4148 1N4149 1N4446 1N4447 1N4448 1N4448 1N4449 1N914 OL4148 DL4448 DL914 A (B) MLL4148-1 MLL4454-1 MMBD4148 MMBD7000 MMBD914 JAN1N4148-1