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    1N58XX Search Results

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    1n58xx

    Abstract: diode 5817 specifications diode IN 5817 1N MARKING 1N5817 1N5819
    Contextual Info: 1N5817 THRU 1N5819 1.0AMP. Schottky Barrier Rectifier VOLTAGE:20 TO 40V CURRENT:1.0A AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded DEVICE MARKING DIAGRAM Weight: 0.4Gram Approximately 1N58XX KEL High current capability, Low forward voltage drop


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    1n58171n5819do-411n58xx+4db-111diode 5817 specificationsdiode in 58171n marking PDF

    1n58xx

    Abstract: EC21QS03 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5 CD73
    Contextual Info: a FEATURES Wide Input Voltage Range: 3.6 V to 30 V Adjustable and Fixed 3.3 V, 5 V Output Options Integrated 1 A Power Switch Uses Small Surface-Mount Components Cycle-By-Cycle Current Limiting Peak Input Voltage (100 ms): 60 V Thermally Enhanced 8-Lead SOIC Package


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    adp3050200khzc001251n58xx+8ec21qs031n58171n58181n914adp3050-5adp3050aradp3050ar-5cd73 PDF

    1N58XX

    Abstract: EC21QS03 ADP3050-3.3 1N5817 1N5818 1N914 ADP3050 ADP3050-5 ADP3050AR ADP3050AR-5
    Contextual Info: a FEATURES Wide Input Voltage Range: 3.6 V to 30 V Adjustable and Fixed 3.3 V, 5 V Output Options Integrated 1 A Power Switch Uses Small Surface-Mount Components Cycle-By-Cycle Current Limiting Peak Input Voltage (100 ms): 60 V Thermally Enhanced 8-Lead SOIC Package


    Original
    adp3050200khzc34511n58xx+8ec21qs03adp3050-3.31n58171n58181n914adp3050-5adp3050aradp3050ar-5 PDF

    1n58xx

    Abstract: diode 5817 specifications 1N5817 1N5819 5819 5818
    Contextual Info: 1N5817 THRU 1N5819 1.0AMP. Schottky Barrier Rectifier VOLTAGE:20 TO 40V CURRENT:1.0A AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded Weight: 0.4Gram Approximately High current capability, Low forward voltage drop High surge current capability


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    1n58171n5819do-411n58xx+3diode 5817 specifications58195818 PDF

    Contextual Info: Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device DO-41 Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. 1.000 25.40 Min. 0.034(0.90)


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    1n5817-g1n5819-gdo-411n5818t-g+51n5819t-g1n5817a-g1n5818a-g1n5819a-g1n5817b-g PDF

    1N58XX

    Contextual Info: 1N5820 THRU 1N5822 3.0 AMP. Schottky Barrier Rectifier FEATURES • • • • DO-15 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection applications


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    1n58201n5822do-15mil-std-750+31n5821300us1n58xx PDF