1N5832 Search Results

1N5832

Contextual Info: 1N5832 1N5833 1N5834 MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5834 are M oto ro la P referred D evices S w itchm ode Pow er R e c tifier SCHOTTKY B A R R IE R R EC TIFIE R S . . . e m p lo y in g th e S c h o ttk y B a r r ie r p rin c ip le in a la rg e a r e a m e ta l- to - s ilic o n p o w e r d io d e .

Vrsm

Abstract: 1N5832
Contextual Info: Switchmode Power Rectifier Schottky Diode [1N5832 ] Technical Data Typical applications : Ideally suited for use as Rectifiers in low voltage , High frequency invertors , Free wheeling diodes and polarity protection diodes. Type No. V RRM V RSM Volts (Volts)

Contextual Info: 1N5832 R THRU 1N5834(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES STUD TYPE 40 A Features 40Amp Rectifier 10-30 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

Contextual Info: 1N5832 thru 1N5834R Silicon Power Schottky Diode VRRM = 10 V - 30 V IF = 40 A Features • High Surge Capability • Types up to 30V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

Contextual Info: 1N5832 thru 1N5834R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 40 A Features • High Surge Capability • Types from 20 V to 40V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

12v dc full wave bridge rectifier

Abstract: 5000 watt full bridge design 1N5S34
Contextual Info: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

u1560

Abstract: 1N5832
Contextual Info: 1N5832 1N5833 1N5834 M M O T O R O L A SCHOTTKY B A R R IE R R E CT IFIE R S H O T C A R R I E R POW ER R E C T I F I E R 4 0 AMPERE 20,30.40 VO LTS . . . e m p l o y in g t h e S c h o t t k y B a r r ie r p r in c ip le in a la rg e a r e a m e t a l t o -s ilic o n p o w e r

1N5832

Contextual Info: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

1n5832

Contextual Info: MCC 1N5832
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU 1N5834 Features • • • • 40 Amp Schottky Barrier Rectifier 20 to 40 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MCC ' M W 4 0 AM PERE S C H O T T K Y / DO-5 20 30 40 1N5832 1N5833 1N5834 40 40 40 Package Outline Pg. A-10 75 75 75 800 800 800 20 20 20 70 70 105 400 400 600 250* 250* 125* 125 125 125 125 125 125 125 125 200 200 200 200 200 200 200 200 0.1 0.1 0.1 0.1

1N5832

Abstract: 1N5833 1N5834
Contextual Info: Transys 1N5832 R THRU 1N5834(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 40 A Features 40Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

Contextual Info: DIGITRON SEMICONDUCTORS 1N5832-1N5834 40 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +175°C TJ Operating junction temperature range -65 to +125°C RθJC Maximum thermal resistance 1.0°C/W junction to Case

BYS35-50

Abstract: 1N5882 BYS35-45 BYS60-45 BYS60-50 motorola sd51 MBR6030L "Schottky Rectifiers" Schottky Rectifiers 1N5834
Contextual Info: SCHOTTKY RECTIFIERS continued l0 , AVERAGE FORWARD RECTIFIED CURRENT (A) 30 CASE 35 40 50 56-02 Metal 60 257-01 Metal (Zffl D05 004 vrrm 20 BYS35-20* 1N5832 30 BYS35-30* 1N5833 1N5834 SD41 MBR3545 lo TC) Tj MAX SD51 BYS35-45* BYS60-45* BYS60-50 600

Contextual Info: 1N5832 thru 1N5834R Silicon Power Schottky Diode VRRM = 10 V - 30 V IF = 40 A Features • High Surge Capability • Types up to 30V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

1N5832(R)

Contextual Info: 1N5832 R 1N5833(R) 1N5834(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODE MODULE TYPE S 40A Features 40Amp Rectifier 20~40 Volts High Surge Capability Types Up to 40 V VRRM DO- 5 (DO-203AB) M Maximum Ratings J Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

1N5834

Abstract: 1N5832 1N5833 C120 C180 D0213AB
Contextual Info: 40 Amp Schottky Rectifier 1N5832 - 1N5834 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes A B C D E F G H J K M N P Notes: 1. Full threads within 2 1 /2 threads 2. Stud is Cathode. 1,2 .669 -.422 .115 -.220 - .687 .7 94 1.00 .453

Naina Semiconductor

Abstract: 1N5832 DO-203AB
Contextual Info: 1 1N5832 Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss Electrical Ratings TC = 250C, unless otherwise noted

NSD30

Contextual Info: 2848793 DIODES INCORPORATE TMD D 1 20407^3 OODGSb? ^ SCHOTTKY BARRIER RECTIFIERS diodes incorporated TYPE O P E R A T IN G T E M P E R A T U R E RAN GE 20 to 45V -65°C to +125°C 50 and 60V -65° C to +150° C S T O R A G E T E M P E R A T U R E RA N G E -65°C to +150°'

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

INTEX

Abstract: D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830
Contextual Info: INTEX/ SEMITRÔNICS CORP 000032^ 27E D h m semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

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MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B