1N5808 Search Results

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Abstract: 16664 JANTX1N5811US UES1303 21156 109-53 UES1303SM RSF0820
Contextual Info: Microserri Ultra Fast Rectifiers Part Number Microsemi Division Package Outline Type 1 Mil |Spec 1 Data Sheet ID IO Amps VR | IFSM V F @ I 3 (Volts) l (Amps) iVoits) . 'J ., : 50 ; 150 SF61 Chatsw orth D 0 -2 0 1 A D STD 14795 6 1N5808 W atertow n

LL4004

Abstract: LL4003 LL4001 LL4002 1N5807 1N5808 1N5809 1N5810 1N5811 BES1301
Contextual Info: B K C INTERNATI ON AL i> 3ÜE • 117^03 DD0G 30b 1 ■ ^ 0 3 ^ “7 1N5807 Series • Fast Switching Rectifiers in “B” Body Package ! Type 1N5807 1N5808 1N5809 1N5810 1N5811 Peak Invera» Voltage MIN. PIV Breakdown Voltage (MIN.) Bv@ lOOpA Average Rectified

Contextual Info: DIGITRON SEMICONDUCTORS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 RECTIFIERS HIGH EFFICIENCY 2.5 AMP TO 20 AMP MAXIMUM RATINGS Peak Inverse Voltage 2.5 Amp Series 6 Amps Series 20 Amp Series 50V 1N5802 1N5807 1N5812 75V 1N5803 1N5808 1N5813 100V 1N5804 1N5809

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

1N5811

Abstract: 1N5807 1N5808 1N5809 1N5810
Contextual Info: Micro/semi Corp. 1N5807 thru 1N5811 W M x fm V ^ Thp d'Ode e *p e rís ^JANSÍ SANTA ANA, CA F o r m o re in f o r m a ti o n call: 714 979-8220 ULTRA FAST RECTIFIERS FEATURES • M ICRO MINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

S25400

Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. RECTIFIER DIE 7 7 .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE

MB345

Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339
Contextual Info: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

Ultra Fast Rectifiers

Abstract: SUES1306G SUES SUES1102
Contextual Info: ULTRA FAST RECOVERY RECTIFIERS GLASS 2A THRU 6A GLASS AXIAL 50V THRU 800V DESCRIPTION FEATURES: These hermetically sealed glass rectifiers are used in switching power supplies and regulators up to 800 V. The ultra high speed characteristics and the availability of high voltage are not commonly

IN5809

Abstract: 1N5815 Diode
Contextual Info: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FE A T U R E S DESCRIPTION • • • • Th is series of High Efficiency Power Rectifiers allows c ircu it designers to design high current, high frequency sup­

BKC Semiconductors

Contextual Info: 6 Amp Voidless Fast Switching Rectifiers 1N5807 thru 1N5811 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power supplies.

IN649

Abstract: BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020
Contextual Info: R ectifiers 1N645 Series • 40 0m A Rectifiers in DO-35 Package 1 M axim um A verag e R ectified C urrent P eak inve rse V olta ge M IN . (P fV ) B re akd ow n V oltage (M IN .) @ 100 |iA (B v ) ('o' Co) 25" C 150" C Forw ard V oltage Drop (V F) @ l F 4 00 m A

IN5811

Abstract: IN5810 1N5811 100S 1N5807 1N5808 1N5809 1N5810
Contextual Info: rfHV 1N5807 thru 1N5811 K •1 Microsemi Corp. FEA T U R ES • • • • • • • • RECTIFIERS Microm iniature package. V oid le ss hermetically sealed g la s s package. Triple layer passivation. M e tallu rgical^ bonded. Ultra fast recovery. H igh su rge capability and extrem ely stable characteristics.

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

100 Amp current 1000 volt diode

Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150
Contextual Info: .25 TO 100 AMP FAST AND ULTRA-FAST RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED FAST AND ULTRA-FAST RECOVERY DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS

SD5171

Abstract: IN6095 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151
Contextual Info: OPTEK TECHNOLOGY INC 4&E D • L^úSflO 0001427 TTl ■ OTK FAST RECOVERY RECTIFIERS 1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 T 03-15 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is

JTX 1N5811

Abstract: 1N5807 1N5808 1N5809 1N5810 1N5811 FSM 12.5 BKC Semiconductors
Contextual Info: 6 Amp Voidless Fast Applications Switching Rectifiers 1N5807 thru 1N5811 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are idiai for use inaireraft or satellite power supplies. Checked items

USD1120

Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Contextual Info: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A

DIODE 1N649

Abstract: SZUFD16 1.5ke series SZU16 Sussex Semiconductor 1N4172A 1N4973 SFD16 S100 p4k 20a
Contextual Info: TM SUSSEX SEMICONDUCTOR, INC. DIES AND CELLS SECTION 7 SUSSEX TABLE OF CONTENTS SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 941 768-6800 • FAX: (941) 768-6868 TABLE OF CONTENTS DEVICE TYPE PAGE NUMBER 1. TRANSIENT SUPPRESSOR DIES