1N5711 DIODE Search Results

MIL-PRF-19500-444

Abstract: JANTX, JX, JAN, Schottky 1n5711 equivalent 1N5711-1 DSB5712 DSB2810 1N5711 1N5712 1N5712-1 1N6857-1
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JANTXV AND JANS

1N5712 JANTX

Abstract: 1N5712-1 JANTX diode 1n5711 1N5711 JANTXV 1N5711-1 N5711 1N5711 1N5712 1N5712-1 DSB2810
Contextual Info: • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV 1N5711 and 1N5711-1 • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV and • SCHOTTKY BARRIER DIODES 1N5712-1 • HERMETICALLY SEALED and • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION DSB5712 and DSB2810

IR 10e

Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
Contextual Info: Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a

Contextual Info: 1N5711-1 1N5711US-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5111, REV. - SJ SX SV SS SWITCHING DIODE 1N5711-1, 1N5711US-1 • Hermetic, non-cavity glass package  Metallurgically bonded  Physical dimensions: Axial lead similar to DO-35 and surface mount similar to D-5D

1N5711 spice

Abstract: 1N5711 1n5711 equivalent
Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE SPICE MODEL: 1N5711 Features • · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Glass

diode t25 13 Go

Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
Contextual Info: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in

Contextual Info: 1N5711 asi SCHOTTKY BARRIER DIODE DESCRIPTION: The 1N5711 is a Silicon Small Signal Schottky Diode for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS If 15 mA Vr 70 V P diss 250 mW @ Ta = 25 °C Tj -65 °C to +200 °C

N5711* diode Die

Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
Contextual Info: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS

1n5711 diode

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

C8510

Contextual Info: I n ter n a tio n a l 1N5711 & 1N5711-1 S e m ic o n d u c to r , I n c . C8510 & C8511 SCHOTTKY BARRIER DIODES FEATURES 1 H e rm e t ic a lly S e a le d M e t a l u r g ic a l ly B o n d e d D o u b le Plug C o n s t ru c t io n :o .06 8/.0 73 1.73/1.93 1.0 0

Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features_ • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection I T D Mechanical Data_ • • • • • DO-35

1NS818

Contextual Info: SCHOTTKY RECTIFIER DIODES, AXIAL, GLASS Peak Forward Peak Surge Current Inverse $ 9 3ms Voltage Superimposed I . . £ -B - 3 *> M -1 — Maximum Average Rectified •> <A T„ *C) PtV |V) 1N5711 C 8 5 t0 C8St1 SD101A SDtO tB SD101C I. (Amps)

1n5711 diode

Abstract: 1N6263 1N5711 1n5711 equivalent DO-204AH LL5711 LL6263
Contextual Info: 1N5711 and 1N6263 Vishay Semiconductors formerly General Semiconductor Schottky Diodes DO-204AH DO-35 Glass Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage

SEMICONDUCTO applications

Abstract: DSAIH0002555 melf Schottky glass
Contextual Info: DO-35 Glass Applications 1 1N5711, 1N6263& SD101 series Schottky Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, higJ* ! f rformance replacement for small signal devices. Exce|ent applications. DO -35 Glass Package * Six Sigma; quality

Contextual Info: 1N5711 / 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal

1N5711 SMD

Abstract: sd101 BKC Semiconductors 1N6263
Contextual Info: DO-35 Glass Ì Applications 1N5711, Ì 1N6263& SD101 series j Schotte Diodes Guard ring protected schottky barrier. Low forward drop. Fast switching, high performance replacement for small signal devices. Excellent protection for MOS devices. Used in steering, biasing andcoupling

Schottky Diodes

Abstract: MP2811 mp2835 1n5713 MP2801 1N5712 MP2233 MP2800 MP2087 MP2097
Contextual Info: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com General Purpose Schottky Diodes Part Number Case Style MP2087 MP2088 MP2097 MP2810 MP2811 1N5712 1N5713 MP2835 MP2836 MP2800 MP2801 1N5711 MP2232

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

IN5711

Abstract: melf Schottky glass jan In5711 SCHOTTKY DIODE SOD-80 JANTX
Contextual Info: SCHOTTKY BARRIER DIODES metelics FOR GENERAL PURPOSE APPLICATIONS CORPORATION FEATURES • High Breakdown Voltage to 70 Volts • Available in Chips, Glass Package Or Double Slug Melf Package • 1N5711 Available in JAN, JANTX and JANTXV • Packages Metallurgical^ Bonded

1n6263

Abstract: 1N5711 1n5711 diode
Contextual Info: 1N5711 and 1N6263 Schottky Diodes DO-204AH DO-35 Glass Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal

1N5711

Contextual Info: 1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request

Contextual Info: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,

1n5711 die

Abstract: MIL-PRF-19500-444 microsemi 1n5712 1N5711 1N5712 CD2810 CD5711 CD5712 CD6857 CD6858
Contextual Info: • 1N5711 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/444 CD2810 CD5711 CD5712 CD6857 CD6858 CD6916 • 1N5712 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED

Contextual Info: DIGITRON SEMICONDUCTORS 1N5711, 1N5712 & 1N6263 • • SCHOTTKY DIODES For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices.