DS11011 Search Results
DS11011 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
DS1101-1000 | Alesis Semiconductor | ADC Converter | Original | 187.69KB | 9 | ||
DS110-11A | ABB Group | Power Semiconductor Data Book 1976 | Scan | 283.03KB | 6 | ||
DS110-11A | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 140.74KB | 1 |
DS11011 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DS110-11A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)75# V(RRM)(V) Rep.Pk.Rev. Voltage1.1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.2k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25õ |
Original |
DS110-11A Current160 Current40u StyleStF-M12 | |
1N5711 spice
Abstract: 1N5711 1n5711 equivalent
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Original |
1N5711 DO-35 DO-35, MIL-STD-202, DS11011 1N5711 spice 1N5711 1n5711 equivalent | |
Contextual Info: RFDA0047 RFDA0047Digital Controlled Variable Gain Amplifier DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 400MHZ TO 2700MHZ Package: MCM 32-Pin, 7.0mm x 7.0mm Features Dual Channel VGA Frequency Range 400MHz to |
Original |
RFDA0047 RFDA0047Digital 400MHZ 2700MHZ 32-Pin, 12-Bit 50dBc 900MHz | |
1N5711Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection B A · · · C D Mechanical Data · · A DO-35 Case: DO-35, Glass Leads: Solderable per MIL-STD-202, |
Original |
1N5711 DO-35 DO-35, MIL-STD-202, DS11011 1N5711 | |
1N5711Contextual Info: 1N5711 V IS H A Y SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection I Mechanical Data_ • |
OCR Scan |
1N5711 DO-35, MIL-STD-202, DO-35 1N5711 DS11011 | |
Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features_ • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection I T D Mechanical Data_ • • • • • DO-35 |
OCR Scan |
1N5711 DO-35 DO-35, MIL-STD-202, DS11011 | |
1N5711 spice
Abstract: 1N5711
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Original |
1N5711 DO-35, MIL-STD-202, DO-35 DS11011 1N5711 spice 1N5711 | |
5632 transistorContextual Info: RF5632 RF5632 2.3GHz to 2.7GHz Linear Power Amplifier 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER N/C N/C VBIAS VC1 N/C VC2 Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm 24 23 22 21 20 19 N/C 1 18 RF OUT N/C 2 17 RF OUT Features Single 5.0V Power Supply 34dB Small Signal Gain Typ. |
Original |
RF5632 RF5632 24-Pin, 28dBm, 2400MHz 2300MHz 2350MHz 5632 transistor | |
Contextual Info: RF5565 3.3 V, 2.4 GHz 802.11 b/g/n WLAN FRONT END MODULE Package Style: QFN, 16-pin, 3 mm x 3 mm x 0.5 mm Features Integrated 2.5 GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0 V to 4.8 V POUT = 20 dBm, 11g, OFDM at |
Original |
RF5565 16-pin, IEEE802 11b/g/n RF5565 RF5565: DS110112 | |
1N5711Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, |
Original |
1N5711 DO-35, MIL-STD-202, DO-35 1N5711 DS11011 | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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OCR Scan |
11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 | |
1n5711Contextual Info: 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage • • Low Forward Voltage Drop Guard Ring Junction Protection I T D Mechanical Data_ • • • • • DO-35 Case: D O -35, Plastic |
OCR Scan |
1N5711 DO-35 IL-STD-202, 1N5711 DS11011 | |
1N5711Contextual Info: 1N5711 r w \T ^ c c I N C O R P O R A T E SC HO TTK Y BARRIER SW ITCHING DIODE D Features_ • • • • Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection B A A T C D M echanical Data_ |
OCR Scan |
1N5711 DO-35, MIL-STD-202, 1N5711 DO-35 DS11011 | |
DS1101-1000
Abstract: ALESIS SEMICONDUCTOR AL1101 FS48K
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AL1101 24-bit 107dB 107dB 24kHz 55kHz 110mW 48kHz) DS1101-1000 DS1101-1000 ALESIS SEMICONDUCTOR FS48K | |
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