1N57 Search Results

DS1101

Abstract: 1N5711W 1N5711W-7 1N5711W-7-F J-STD-020A schottky diode sod-123 marking code 12
Contextual Info: SPICE MODEL: 1N5711W 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

N5711* diode Die

Abstract: 1N5712 1N5711 DIE n5711 1N5711 CD2810 CD5711 CD5712 DSB5712
Contextual Info: • 1N5711 AVAILABLE IN JANC • 1N5712 AVAILABLE IN JANC • SCHOTTKY BARRIER DIODE CHIPS FOR GENERAL PURPOSE APPLICATION • SILICON DIOXIDE PASSIVATED CD5711 and CD5712 and CD2810 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES MAXIMUM RATINGS

marking SA

Contextual Info: ADVANCE INFORMATION 1N5711WS SURFACE MOUNT SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for

diode 5082-3080

Abstract: 1N5767 5082-3080 1N5957
Contextual Info: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are

MT29KZZZ4D4RGFAK-5 W

Contextual Info: Microsemi PIN Diodes — Part Number i Microsemi I UPP9401 UM9401 UM9401F UM9401SM UM9402 UM9415 UM9415SM UM9301 UM9301SM 1N5767 1N5957 UM6601 UM6001 UM7301 UM7301SM UM7001 UM7001SM UM7501 UM6201 UM9441 UM7101 UM7101SM UM9601 UM9603 UM9605 UM9607 UPP1001 UM9701

1NS818

Contextual Info: SCHOTTKY RECTIFIER DIODES, AXIAL, GLASS Peak Forward Peak Surge Current Inverse $ 9 3ms Voltage Superimposed I . . £ -B - 3 *> M -1 — Maximum Average Rectified •> <A T„ *C) PtV |V) 1N5711 C 8 5 t0 C8St1 SD101A SDtO tB SD101C I. (Amps)

Contextual Info: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion H t >\ B I • • •

Contextual Info: 1N5719 asi SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: T he1N 5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 100 mA Vr 150 V P diss 250 mW @ Ta = 25 °C Tj -65 to +200 °C

JANTX1N5719

Abstract: Diode LT 443 1N5719 1N5719 JAN 1N5719 JANTX
Contextual Info: HEWLETT g PIN SWITCHING DIODE MILITARY APPROVED MIL-S-19500/443 PACK ARD COMPONENTS JAN 1N5719 1N5719 Features PRODUCTS LARGE DYNAMIC RANGE LOW HARMONIC DISTORTION Maximum Ratings at The JAN Series 1N5719 is a planar passivated silicon PIN diode designed fo r use in RF sw itching circuits. These

JANTX, JX, JAN, Schottky

Abstract: 1N5711UR-1 SCHOTTKY DIODE SOD-80 JANTX
Contextual Info: • 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

1n5711 diode

Contextual Info: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of

1N5711W

Abstract: 1N5711W-7 J-STD-020A
Contextual Info: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance SOD-123 Mechanical Data · · · · · · · · · D H J G Case: SOD-123, Plastic

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N6263 1N5711 Features • • • • 400 mWatt Small Signal Schottky Diode 60 to 70 Volts High Reverse Breakdown Voltage

marking A2 diode SOD 123

Abstract: sod123 diode marking e1 sod123 diode marking A2 diode marking A2 sod123 1N5711W SOD123 Package diode e1 marking L1 sod123
Contextual Info: SOD-123 Plastic-Encapsulate Diode 1N5711W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1N5711WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: 1N5711WS:SA 0.30 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time

1N5774

Abstract: 1N5774 JANTX
Contextual Info: 1N5774 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 9 FEATURES: • • • • 5 QUALIFIED PARTS LISTING: MIL-PRF-19500/474

Contextual Info: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

Contextual Info: 1N5719 asii SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The 1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 1OO mA Vr 15O V Pd i s s 25O mW @ Ta = 25 °C Tj -65 to +2OO 0C

5082-2815

Contextual Info: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS

1N5719

Contextual Info: 1N5719 SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKA. Page 1 of 1 Enter Your Part # Home Part Number: 1N5719 Online Store 1N5719 Diodes SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE Transistors MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Integrated Circuits

Contextual Info: Schottky Diodes 1N5711 Series DESCRIPTION The 1N5711 is a Schottky diode designed with a metalized guard ring to achieve a high voltage breakdown. Features • RoHS Compliant • High voltage breakdown • UHF/VHF detection/pulse applications • Diode matching available

5082-2080

Abstract: 5082-2826 5082-2835 MTTF 5965-8870E Y2272 DOD-HDBK-1686
Contextual Info: Passivated General Purpose Schottky Diodes Reliability Data The following cumulative test results have been obtained from testing performed at HewlettPackard in accordance with the latest revision of MIL-STD-750. Data was gathered from the 1N5711/12 5082-2800/04/05

OC/15

Contextual Info: 1N5711W Surface Mount Schottky Barrier Diode Voltage Range 70 Volts 250m Watts Power Dissipation SOD-123 Features 0.022 0.55 Typ. Min. 0.053(1.35) Max. Low forward voltage drop Guard Ring Construction for Transient Protection Fast switching time Low Reverse Capacitance