DS1101 Search Results

Contextual Info: DS1101SM10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.0k @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25k¥ V(FM) Max.(V) Forward Voltage1.07 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

GEC 44 3A

Contextual Info: AUGUST 1995 DS1101SG DS4166-2.3 DS1101SG RECTIFIER DIODE APPLICATIONS KEY PARAMETERS • Rectification. VRRM IF AV IFSM ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. 1800V 1730A 31250A ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

GEC 44 3A

Abstract: DS4166-2 DS1101SG13
Contextual Info: AUGUST 1995 DS1101SG DS4166-2.3 DS1101SG RECTIFIER DIODE APPLICATIONS KEY PARAMETERS • Rectification. VRRM IF AV IFSM ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. 1800V 1730A 31250A ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

GEC 44 3A

Abstract: DS1101SG18 DS1101SG DS1101SG13 DS1101SG14 DS1101SG15 DS1101SG16 DS1101SG17
Contextual Info: AUGUST 1995 DS1101SG DS4166-2.3 DS1101SG RECTIFIER DIODE APPLICATIONS KEY PARAMETERS • Rectification. VRRM IF AV IFSM ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. 1800V 1730A 31250A ■ Welding. ■ Battery Chargers. FEATURES ■ Double Side Cooling.

Contextual Info: DS1101SM12 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.1k @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25k V(FM) Max.(V) Forward Voltage1.07 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

Contextual Info: Si GEC P L E S S E Y AUGUST 1995 SEMI CO NDUC TOR S DS4166-2.3 DS1101SG RECTIFIER DIODE KEY PARAMETERS APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers. V RRM F AV FSM 1800V 1730A

Contextual Info: DS1101SM11 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.1k @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage1.1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25k V(FM) Max.(V) Forward Voltage1.07 @I(FM) (A) (Test Condition)1.8k @Temp. (øC) (Test Condition)25#

S4 DIODE schottky

Abstract: L2 diode SOD123 Diode S4 APD400 marking L2 SOD123 DS1101 SD103AW SD103BW SD103CW
Contextual Info: SD103AW - SD103CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance E D A B Mechanical Data · · · · SOD-123 Case: SOD-123, Plastic

DS1101

Abstract: 1N5711W 1N5711W-7 1N5711W-7-F J-STD-020A schottky diode sod-123 marking code 12
Contextual Info: SPICE MODEL: 1N5711W 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion

DS1101

Abstract: S3 marking DIODE J-STD-020A SD101AW SD101BW SD101CW SD101CW-7-F marking code sk DIODE
Contextual Info: SPICE MODELS: SD101AW SD101BW SD101CW SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance SOD-123 Mechanical Data

Contextual Info: CHERRY DS S e r i e s S o l id S t a t e S e n s o r FEATURES: • Fits mounting dimensions of popular snap-action switches • Tested to over 10 million operations • High ratio and standard ratio actuator position • Available with lever, roller, and simulated roller actuators

S3 marking DIODE

Abstract: diode marking code 7 marking code Sk transistors J-STD-020A SD101AW SD101AW-7 SD101BW SD101CW
Contextual Info: SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance SOD-123 Mechanical Data · · · · · · · ·

marking code s4 diode

Abstract: device marking code S4 DS1101 diode marking code 7 DIODE marking S4 sod DIODE S4 S4 Schottky s6 SOD-123 J-STD-020A SD103AW
Contextual Info: SD103AW - SD103CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time SOD-123 Mechanical Data · · · · · · · · · D H G Case: SOD-123, Plastic

Contextual Info: 1N5711W SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideally Suited for Automatic Insertion H t >\ B I • • •

DS1101

Abstract: device marking code S4 SD103AW SD103AW-7-F SD103BW SD103BW-7-F SD103CW
Contextual Info: SD103AW - SD103CW SCHOTTKY BARRIER DIODE Features • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Lead Free/RoHS Compliant Note 3 SOD-123 Mechanical Data • • • • • • • • • • Case: SOD-123 Case Material: Molded Plastic. UL Flammability

RF9802

Contextual Info: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE Features GND RX1 RX2 RX3 19 18 17 2 16 RX4 Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND

band 1 duplexer

Abstract: RF1196 1085MHz umts duplexer LTE duplexer
Contextual Info: RF1196 RF1196SDM with Integrated B1 Duplexer: QB GSM, TB UMTS SDM WITH INTEGRATED B1 DUPLEXER: QB GSM, TB UMTS Package: Module, 4.5mmx4.5mmx1.0 mm RF1196 GSM Rx1 GSM Rx2 Features        GSM Rx3 Very Low IL and High Isolation: GSM LB Tx: 1.1dB

Contextual Info: M ic r o c h ip 27HC1616 256K 16K X 16 High Speed CMOS EPROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55 ns access time available • CMOS Technology for low power consumption —90 mA Active current —50 mA Standby current

Contextual Info: RF5602 RF56023.3V to 5.0 V, 2.3GHz to 2.7GHz Linear Power Amplifier 3.3V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER Features GND VCC2 VCC2 14 13 BIAS VCC 1 12 RF OUT Single 3.3V to 5V Supply st 2% EVM RMS at 25dBm, 4.2V PDOWN Integrated Power Detector on Die

4342414

Abstract: microprocessor 80386 internal architecture 27HC1616-55 27HC1616-70
Contextual Info: & 27HC1616 Microchip 256K 16K X 16 High Speed CMOS Erasable PROM FEATURES DESCRIPTION • 16 bit configuration • High speed performance —55ns access time available • CMOS Technology for low power consumption —90mA Active current —50mA Standby current

s4 sod-123

Abstract: SD103AW-7-F SOD-123 marking code 24 "MARKING CODE S4" device marking code S4 DS1101 MARKING S4 MARKING S4 diode schottky J-STD-020D SD103AW
Contextual Info: SD103AW - SD103CW SCHOTTKY BARRIER DIODE Please click here to visit our online spice models database. Features Mechanical Data • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Lead, Halogen and Antimony Free, RoHS Compliant "Green"

1N6263

Contextual Info: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •

Contextual Info: SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE Features • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time E D Mechanical Data · · · · · · A B Case: SOD-123, Plastic Polarity: Cathode Band

Contextual Info: SD101AW - SD101CW SCHOTTKY BARRIER SWITCHING DIODE SPICE MODEL: SD101AW SD101CW Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance SOD-123 Mechanical Data