1N5625 V Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N5624-1N5627 GLASS PASSIVATED RECTIFIER MAXIMUM RATINGS and ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Characteristics Symbol 1N5624 1N5625 1N5626 1N5627 Unit Maximum peak repetitive reverse voltage VRRM 200 400

DIODE 1N5625 V

Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5625

Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5624

Abstract: 1N5625 1N5626 1N5627 BYW82 BYW83 BYW84 BYW85 BYW86
Contextual Info: BYW82.BYW86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Controlled avalanche characteristics D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW82 – 1N5624 BYW83 – 1N5625

1N5625

Abstract: 1N5405 1n5401 1n5402 1N5404 1N5404 equivalent 1N5406 1N5400 1N5403 CPR2-010
Contextual Info: Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 @ TA (oC) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE GPR-1A DO-15 DO-201AD GPR-3A VRRM (VOLTS) 50 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 400 1N5550 1N5624 1N5551 1N5625

Contextual Info: 1N5625+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)70’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)25’

1N5625

Abstract: 1n5627
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

1N5625

Abstract: 1N5624
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of

A15D

Abstract: 1N5625 A14F DT230 ge a15a 1n5626 jantx 1N5627 JANTX 1n5626 1N5624
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

1N5625 PIV

Abstract: 1N5060 BYW55 1N4248 1n5062 1N5061 1N5059 1N5625 byw55 byw56 1N4245
Contextual Info: Sinterglass Rectifiers Part No. 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5614 1N5616 1N5618 1N5620 1N5622 G1A G1B G1D G1G G1J G1K G1M BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M

1N5179

Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D A15M A15N
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 ! j 600 § 500 s 400 5 300 z § H O > 200 _l fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK A V ER A G E C U R R E N T -A M P E R E S S T A N D A R D RECTIFIERS SELECTOR GUIDE

powerex nd

Contextual Info: 7 2 9 4 6 2 1 POWEREX INC 74 d F | 7 5 T 4 L ,2 1 0001333 T "|~ Ittri MnnntoH Rectifier TRANSIENT VOLTAGE PROTECTED 5.0 Amps 200-800 Volts THE G E N ER A L ELECTRIC A15 IS A 5.0 A M PERE RATED, A X IA L LEADED G E N ER A L PURPOSE RECTIFIER. ITS DUAL H EA T SIN K CONSTRUCTION

Contextual Info: Rectifiers, General purpose Continued 3.0 2.0 lo (AMPS) @ T a (°C) 75 50 75 55 75 IFSM (AMPS) 50 50 200 100 125 CASE G P R -1A D O -15 V R R M (VOLTS) 50 I/ D O-201 A D G P R -3A 1N5400 100 CPR2-010 CR2-010 1N5401 200 CPR2-020 CR2-020 1N5402 300 1N5550

In5062

Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Contextual Info: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149

A14F

Abstract: DT230 a15m 1N5624
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 30 00

A114F

Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —

1N5624

Abstract: 1N5625 1N5626 1N5627
Contextual Info: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of

ge a15a

Abstract: A114A A15E A15A A14A-P A115B A115A A114B A115D A15C
Contextual Info: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS

1N5624

Abstract: 1N5625 1N5626 1N5627
Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4)

Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 3 .0 Amperes FEATURES CASE STYLE G3 ♦ Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded constructed ♦ Hermetically sealed package

A114B

Abstract: A114A A115B A115F A115C A115A A115D A114F A14P GER4007
Contextual Info: R EC T IFIER S rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE R EC T IFIER S

JANTX 1N4001

Abstract: 1N4001.4007 A15E A114A a115F A115A GER4007 ln4001 A114C A14P
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 15 0 0 1000 900 600 « 700 !j 600 § 500 s z 400 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 1 0 0 14 0 2 5 0 4 0 0 750 IK A V ERA G E C U R R E N T -A M P E R ES S T A N D A R D RECTIFIERS SELECTOR GUIDE

diode A14A

Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

A115A

Abstract: A115F A115D A14F GER4007 A114A A114C A115B A115C GER4001
Contextual Info: RECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS