1N3876 Search Results

Contextual Info: 1N3876 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current6.0 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)20 @I(R) (A) (Test Condition)4.0 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)6.0

tt 3043

Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Contextual Info: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,

CP CLARE hg 1004

Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any