1N3840 Search Results

Contextual Info: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m

4E20-8

Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

fri07

Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

1N3842

Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Contextual Info: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current

shockley diode application

Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
Contextual Info: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has

4E50M-28

Abstract: FR103 1N3772
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

3S41SL

Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
Contextual Info: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28

1N5411

Abstract: 1N5760 DIODE GE 103717 1N5758 1N5761 germanium motorola 2n491 1N5759 Hitron
Contextual Info: PART NUMBER INDEX Part Number Manufacturer 1N3299 AmerMicroSC Mcrwv Diode 1N3300 AmerMicroSC Mcrwv Diode 1N3300A AmerMicroSC 1N3301 Mcrwv Diode 1N3301 A 1N3302 Mcrwv Diode 1N3302A 1N3303 CrimsonSemi 1N3303A Mcrwv Diode 1N3304 AmerMicroSC Mcrwv Diode 1N3304A

shockley diode

Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
Contextual Info: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060