4E20-8
Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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uf4001uf4002uf4003uf4004+13uf4005uf4006uf40074e20-81n32991n33001n3300a1n33031n3303a1n33041n34891n3489a1n3490
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fri07
Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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uf4001uf4002uf4003uf4004+13uf4005uf4006uf4007fri071n38421n32991n38364e20-31n38444e20-84e50-m-281n33001n3300a
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1N3842
Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Contextual Info: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current
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125pauf4001uf4002uf4003+14uf4004uf4005uf4006uf40071n38424e20-284e20-34e30-81n34901n32991n38391n33001n3300a1n3303
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shockley diode application
Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
Contextual Info: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has
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8000/nominalshockley diode applicationshockley diodeshockley diode applications+71n38352sc 945 p transistordiode shockley1n3837shockley diode high voltage and high currentshockleyclevite
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4E20-28
Abstract: 4E20-8 4E20-M-3 4E30-M-3 4E50M-28 4E50 1N4007V AUO-002 4E303 4E20
Contextual Info: AMERICAN POIilER 073713S 5«iE D DEVICES 0DDDD7D DM7 • A P D / ^ c V - / J » 1N4001-1N4007 p o w e r d e v i c e s , inc. SEMICONDUCTORS 1A plastic silicon rectifiers MECHANICAL CHARACTERISTICS - .010 : 002 NOM DIA I'61 1.1 FEATURES • Low cost • High current capability
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073713s1n4001-1n4007do-411n4001+151n40021n4o031n40041n40051n40061n40074e20-284e20-84e20-m-34e30-m-34e50m-284e501n4007vauo-002 4e3034e20
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4E50M-28
Abstract: FR103 1N3772
Contextual Info: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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125pauf4001uf4002uf4003+7uf4004uf4005uf4006uf40074e50m-28fr1031n3772
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3S41SL
Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
Contextual Info: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28
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shockley
Abstract: 4E30-8 1N3839 1N3299 1N3836 1N3842 4E20-28 4E20-3 4E20-8 4E20-M-28
Contextual Info: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E 20-M -8 4E20-28 20±4 20±4 20±4 20±4 20 ± 4 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4
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3541sldo-7/do-354e20-34e20-m-3+124e20-84e20-m-84e20-284e20-m-284e30-34e30-m-3shockley4e30-81n38391n32991n38361n3842
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shockley
Abstract: 4E20-8 4E30-8 1N3844 1n3842 4E20-28 4E20-3 4E20-M-28 4E20-M-3 4E20-M-8
Contextual Info: F E NUI AL EL EC T RO NI CS /APD Û3 DE I 3541SL.3 DODDÌEE 3 T DO-7/DO-35 Case Switching Voltage Typo ' 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 - — 14-25 — 14-25 — 4E20-M-28 4E30-3 4E30-M-3 4E30-8 4E30-M-8 20 ± 4 30±4 30 ± 4 30 ± 4
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4E20-28
Abstract: 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20-8 4E20
Contextual Info: 53E D AMERICAN POWER DEVICES • D73713S Q000Q25 4 .■ 5 FOUR-LAYER DIODES “ — - — - - i I DO-7/DO-35 Case Type Switching Voltage Vs ± V @ 25°C v 4t?20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 20±4 20±4 20±4 20 ± 4 20±4 4E20-M-28
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shockley diode
Abstract: shockley diode shockley Thyristor Shockley diode GG 26 4E204 diac bidirectional diode 4E50M28 1N3772 1N3835
Contextual Info: TRIGGERS & SWITCHES Item Number Part Number Manufacturer Switching Voltage Min V Max Pulse ITRM @ Width (s) (A) Is Max VT Max (A) (A) @ IT IH Max (A) (A) Operating Temperature (Oe) Min Max Package Style Diac, (Bidirectional Diode Thyristor) (Cont'd) 060
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1n37711n3300a1n33004e20m28+114e20m8shockley diodeshockleydiode shockleythyristor shockleydiode gg 264e204diac bidirectional diode4e50m281n37721n3835
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shockley
Abstract: 4E20-28 395 transistor clevite 4E20-8 4e20m-8 4G200M 4E20A 4J50-25 4E30-8
Contextual Info: TRANSISTOR PA L O 1801 ALTO PAGE PLANT MILL ROAD • PALO ALTO. CALIFORNIA A D iv is io n o f C /e vite C o rp o ra tio n 4-LAYER MIL-LINE 1-99 100-499 4E20M-8 5.00 4.00 4E20M-28 4.80 4E30M-8 500-1999 E DIODES S E R I E S IN 1-99 100-499 500-1999 3.30 IN 3831
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4e20m-84e20m-284e30m-84e30m-28+154e40m-84e40m-284e50m-84e50m-284e100m-84e100m-28shockley4e20-28395 transistorclevite4e20-84g200m4e20a4j50-254e30-8
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