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    1N2129A DIODE Search Results

    1N2129A DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    1N2129A DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N2128A

    Abstract: 1N2130A 1N2131A 1N2131AR 1N2129A 1n2129a DIODE
    Contextual Info: 1N2128A thru 1N2131AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF =60 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N2128A R 1N2129A (R) 1N2130A (R) 1N2131A (R)


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    1N2128A 1N2131AR 1N2128A 1N2129A 1N2130A 1N2131A 1N2130A 1N2131A 1N2131AR 1N2129A 1n2129a DIODE PDF

    Contextual Info: 1N2128A thru 1N2131AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF =60 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.


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    1N2128A 1N2131AR 1N2129A 1N2130A 1N2131A cu-65 PDF

    IN2131A

    Contextual Info: International IQ R Rectifier Diodes Fox 1FSM Port Number V RRM V ' f (AV) I faV @ T c (A) (C) (V) 50 Hz (A) 60Hz (A) OR R Q)C(DC) (°C/W) Notes Demand Number Outline Key Standard Recovery 40 140 480 500 1 Q 12 4 0KF100 1000 40 140 480 500 1 9 12 20201 4 0 H F I2 0


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    40HF80 0KF100 40HF140 1N2129A IN2130A 1N2135A 70HF20 70HF40 70HF6Ö 70HF80 IN2131A PDF

    1N2128A(R)

    Contextual Info: 1N2128A R T HRU 1N2138A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 60A 60 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N2128A(R)


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    1N2128A 1N2138A 1N2129A 1N2130A 1N2131A 1N2133A 1N2135A 1N2137A 1N2128A(R) PDF

    IN1183A

    Abstract: IN1183 1N1183A Series peak inverse voltage in3766 BYS50 1N2130A in3768 1N1187 byss0 BY550-1000
    Contextual Info: I C SEMICONDUCTOR T 0 0 2 M 7 T O O O O O l l 013 • INC kflE D EICS Silicon rectifier diodes. 5 Amps, to 60 Amps. V A V 3 t T C ^RRM V rm (V) (A) VsM (A) M ax. F orw ard V oltage D rop at T a = 25 °C V F at 1F(AV) (V) (A) 60 60 60 60 60 60 60 300 300


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    T002M7T DO-201AD. BY550-50 BY550-100 BYS50-200 BYS50-400 BY550-600 BY550-800 BY550-1000 183/1N3765 IN1183A IN1183 1N1183A Series peak inverse voltage in3766 BYS50 1N2130A in3768 1N1187 byss0 PDF

    1N1186RA

    Abstract: 1N1184 1N1183 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB
    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and


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    1N1183, 1N3765, 1N1183A, 1N2128A DO-203AB 1N1183A 1N2128A 1N3765 1N1183 18-Jul-08 1N1186RA 1N1184 1N1183 1N1183A 1N1184A 1N1185A 1N1186A 1N3765 DO-203AB PDF

    1N1184

    Abstract: 1N1189 1N1183 1N1183A 1N1184A 1N1185A 1N2128A 1N3765 DO-203AB
    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and


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    1N1183, 1N3765, 1N1183A, 1N2128A 2002/95/EC DO-203AB 1N1183 1N2128A 18-Jul-08 1N1184 1N1189 1N1183 1N1183A 1N1184A 1N1185A 1N3765 DO-203AB PDF

    1N3765

    Abstract: 1N1183 1N1183A 1N1184A 1N1185A 1N2128A DO-203AB 1N2128
    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and


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    1N1183, 1N3765, 1N1183A, 1N2128A 2002/95/EC DO-203AB 1N1183 1N2128A 11-Mar-11 1N3765 1N1183 1N1183A 1N1184A 1N1185A DO-203AB 1N2128 PDF

    IOR 5250

    Abstract: 1N1183A IN1183 1N212BA IOR 136 1N1183 1N2128A 1N3765 1N11B3 N1190
    Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 Amp Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics ' f îAVi 1N1183 1N3765 1N1183A 35* 35* 40* 1N2128A Units


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    1N11B3, 1N3765, 1N11S3A, 1N212BA 1N1183 1N3765 1N1183A 1N2128A IOR 5250 IN1183 IOR 136 1N11B3 N1190 PDF

    1N119

    Abstract: 1N37 1N213 25MAY 1n1183 1n212
    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and


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    1N1183, 1N3765, 1N1183A, 1N2128A 2002/95/EC DO-203AB 1N1183 1N3765 1N1183A 2011/65/EU 1N119 1N37 1N213 25MAY 1n212 PDF

    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and


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    1N1183, 1N3765, 1N1183A, 1N2128A 2002/95/EC 1N1183 1N2128A 60emarks 2011/65/EU 2002/95/EC. PDF

    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,


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    1N1183, 1N3765, 1N1183A, 1N2128A DO-203AB 1N1183 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,


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    1N1183, 1N3765, 1N1183A, 1N2128A DO-203AB 1N1183 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    160MT160K

    Abstract: bridge rectifier 1BQ40 IRKD56-12 10RIA10 35MB40A 26MT20 P403W ST330C12L0 P101W 26MB80A
    Contextual Info: Index International Rectifier Bridges V RRM Part Number V I O (A) @T C (°C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R ΘJC K/W I RM (µA) Notes Fax-on-Demand Single Phase D-70 Schottky D-70 1BQ20 1BQ40 20 40 1 1 45 45 0.65 0.65 1 1 30 30 31 31 60


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    1BQ20 1BQ40 DF005S DF01S DF02S DF04S DF06S DF08Snge 82RIA40 ST180S04P2V 160MT160K bridge rectifier 1BQ40 IRKD56-12 10RIA10 35MB40A 26MT20 P403W ST330C12L0 P101W 26MB80A PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


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    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF