1N1186 Search Results

MR3492

Abstract: MR3495 MR3493 1N1164 MR2502 MR2504 MR2510 MR3491 MR2500 MR2501
Contextual Info: STANDARD RECOVERY RECTIFIERS continued lo, AVERAGE FORWARD RECTIFIED CURRENT (A) 25 *0 CASE 35 193-03 Plastic Note 2 43-05 257-01 / V rrm 50 MR2500 MR3491 1N1183 100 MR2501 MR3492 1N1164 200 MR2502 MR3493 1N1186 400 MR2504 MR3495 1N1188 600 MR2506 800 MR2508

R30420

Contextual Info: Standard Recovery Rectifiers : , P a rt N um ber M icrosem i i D ivision Microsemi Sì;?,. Package O utline Type f ' M il Spec Data S h e e t ID IO Am ps VR IFSM V F @ IO ; (V olts) j (A m p s) [ (V olts) I I ' r REC 1N1185A 1N1186 1N1186A 1N1186A JA N 1N 1186

Contextual Info: 1N1186+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

1N1181

Abstract: 1N1189A 1N118 1N1183A 1N1186A 1N1187A 1N1190A A100A Edal
Contextual Info: EDAL IN DUS TRI ES INC BCHSTlb 0000273 1TH mZT>L MSE D /-O Ì-/J — t * Bv - PIV Io See.Table. kO A <§ Is 200 AMPS Vf 1.1 v @ Ir Ir ' » C Case 1-00 A <§ -21 PIV @ -121 <3 STYLE DO-* STAMP Bdal. P/N EQUI V. TO P/N 1N1183A 1N1181|A 1N118£A 1N1186A

70HF120

Abstract: 85HF120 88HF120 85hf80
Contextual Info: International llORlRectifier Rectifiers Standard Recovery 40-85 Amps Part Number •f <AV TC Vr r m V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 43HF10 43HF20 43HF40 43HF60 43HF80 43HF100 43HF120 43HF140

Contextual Info: 1N1186+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

Contextual Info: 1N1186/R asi SILICON RECTIFIER DESCRIPTION: The 1N1186/R Rectifier is Designed for General Purpose Power Supply Applications. PACKAGE STYLE D O - 5 • 1N1186 -A n o d e to Case • 1N118R - Cathode to Case MAXIMUM RATINGS V rwM 200 V lo 35 A a v g @ Tc = 140 °C

86HF12

Abstract: 1N1185A 70HF120 b5ta
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4A 5S 452 O Q l O b T S 2 International ïô r I Rectifier Rectifiers, Standard Recovery 40 TO 85 AMPS v Part RRM ’ f AV @TC number *FSM ^ 50Hz (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100

1N1184

Abstract: part marking Ht1 DO-203AB Package 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

1n1186a

Abstract: 70HF120 88hf100
Contextual Info: International 6HIRectifier Diodes Standard Recovery 40-85 Amps lF AV @Tc Pari Number Vr r m (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 1N2128A 1N2129A 1N2130A 1N2131A 1N2133A 1N2135A 1N2137A 1N2138A 50

85hf120

Abstract: 70hf120 73HF40 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A R7B24 1N1189A
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4A 5S 452 O Q l O b T S 2 International ïô r I Rectifier Rectifiers, Standard Recovery 40 TO 85 AMPS Part v RRM ’f AV @TC number *FSM ^ 50Hz (V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100

1N5171

Abstract: 1n5625 piv MR1215SL 1N5172 1N5198 1N5199 1N5201 1N5173 1M3886 1N3768
Contextual Info: o o GENERAL PURPOSE RECTIFIERS ADC CASE 1A 2A A 5us C 5us C 5us 1N5170: 1NS171 1N5172 D 5us 1N5197 1N4517 1N5199 1N5624 1N5550 SPD546A 1N4245 1N5614 1N5059 12A 35A 100A DO-4 5us 1N1199A DO-5 5us 1N1183 G 5us 1N1124A 1N1200A 1N1201A 1N1202A 1N1184 1N1185 1N1186

Contextual Info: 1N1186+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

1N1186

Contextual Info: 1N1186/R asii SILICON RECTIFIER DESCRIPTION: The 1N1186/R R ectifier is Designed fo r G eneral Purpose P ow er Supply A pplications. PACKAGE STYLE DO- 5 • 1N1186 -A n o d e to Case • 1N118R - Cathode to Case MAXIMUM RATINGS Vr w M 200 V Io 35 A avg @ Te $ 1 4 0 OC

21135

Abstract: DO21 ST3010A DO-21 1N3659
Contextual Info: Microsemi Standard Recovery Rectifiers Part Number REC 1N2160 1N1434 1N3659 : 1N1435 1N3660 ST3010 ST3010A 1N1436 i 1N3661 ! ST3020 ST3020A : 1N1437 1N3B63 ST3040 ST3040A 1N1438 ST3060 ! ST3060A ST3080 ST3080A i ST30100 ; ST30100A i 1N1186 1N4525 I R3520PF

Contextual Info: rZ 7 SGS-THOMSON 1N1186 —> 90 Ä 7# [*^® M O T e*S 1N3766 /1 N3768 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CUR RENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS (limiting values Parameter Value Unit Average forward current *

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N2788

Abstract: 7c122 S3420 1N1184 silicon power rectifier 1N1186 1N2459 1N2461 1N3968 R3410
Contextual Info: fl5 COORS COMPONENTS INC DE1E43D00L, □D0004cl Silicon Power Rectifiers Series 34 45 AMP Avg; Vrbm to 1200 Vblts _ • ■ ■ ■ ■ 82 0 0 0 04 9 Glass to metal construction Low forward voltage drop Excellent thermal fatigue capability High surge current capability

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

A44E

Abstract: n3903 N1183A IN1188 A139 1N1183A-90A 1N3909-13 1N5332 A40F 1N1190 JANTX
Contextual Info: FAST R E C O V E R Y R E C T IF IE R S S E L EC T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s z 400 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R E C T IF IE R S SE L EC T O R GUIDE

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

A139

Abstract: SCR Handbook, General electric IN1188 24kf A40F 1N3909-13 1N5332 sk51
Contextual Info: FAST RECOVERY RECTIFIERS SELECTOR GUIDE 2000 1500 « 1000 900 600 700 !j 600 § 500 s z 400 5 300 §H 200 _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE C U R R EN T -A M PER ES STANDARD RECTIFIERS SELECTOR GUIDE 300 0 V3 2000