MR2500 Search Results

MR251

Abstract: MR2510
Contextual Info: Looking For MR2500, MR2501, MR2502, MR2504, MR2506, MR2508, MR2510 Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP BUTTON DIODES MECHANICAL SPECIFICATION FEATURES Suggested Alternative For The MR2500, MR2501,

MR3492

Abstract: MR3495 MR3493 1N1164 MR2502 MR2504 MR2510 MR3491 MR2500 MR2501
Contextual Info: STANDARD RECOVERY RECTIFIERS continued lo, AVERAGE FORWARD RECTIFIED CURRENT (A) 25 *0 CASE 35 193-03 Plastic Note 2 43-05 257-01 / V rrm 50 MR2500 MR3491 1N1183 100 MR2501 MR3492 1N1164 200 MR2502 MR3493 1N1186 400 MR2504 MR3495 1N1188 600 MR2506 800 MR2508

ierc heatsink

Abstract: motorola bridge rectifier mda diode bridge 3510 MDA3500 309A-02 motorola bridge rectifier MR2500 diode bridge 3506 diode bridge 3504
Contextual Info: 12E MOTOROLA SC -CDIODES/OPTOÏ D g b3fc.72SS D t m t i f l S 1 | rr-3t3-ö7 MOTOROLA MDA3500 Seríes SEM ICONDUCTOR TECHNICAL DATA RECTIFIER ASSEMBLY . . . utilizing individual void-free molded MR2500 Series rectifiers, interconnected and mounted on an electrically isolated aluminum

R2501

Abstract: R2502 MR2506 motorola silicone controlled rectifier motorola bridge rectifier MR2500 MR2501 MR2502 MR2504 R2500
Contextual Info: MOTOROLA Order this document by MR2500/D SEMICONDUCTOR TECHNICAL DATA Medium-Current Silicon Rectifiers MR2500 Series . . . compact, highly efficient silicon rectifiers for medium–current applications requiring: MR2504 and MR2510 are Motorola Preferred Devices

2506L

Abstract: 2500L 2501L MR2500L MR2512L 2504L
Contextual Info: MR2500L - MR2512L AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 25 Amperes MR - L FEATURES : * * * * * 0.053 1.35 0.050 (1.27) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.246 (6.25)

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com MR2500L - MR2512L AUTOMOTIVE

Contextual Info: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com MR2500 - MR2512 AUTOMOTIVE

TC 2608

Abstract: MR2500S HP 2602
Contextual Info: MR2500S Series SILICON MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS . . . compact, highly e fficient silicon rectifiers fo r medium-current applications requiring: DIFFUSED JUNCTION 50-1000 • High Current Surge - 600 Amperes •

MR250-4

Abstract: 2508 pb MR2500 MR2512 MR2506 MR250-1 MR2504
Contextual Info: MR2500 - MR2512 AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 25 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.342 8.69 0.332 (8.43) 5° NOM * Pb / RoHS Free

R2501

Abstract: R2506 motorola button diode R-2501
Contextual Info: MOTOROLA Order this document by MR250Q/D SEMICONDUCTOR TECHNICAL DATA Medium -Current Silicon Rectifiers MR2500 Series . . . compact, highly efficient silicon rectifiers for medium-current applications requiring: MR2504 and MR2510 are Motorola Preferred Devices

MR2510

Abstract: MR2500 MR2512
Contextual Info: MR2500 - MR2512 AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 25 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.342 8.69 0.332 (8.43) 5° NOM 0.246 (6.25)

2502M

Abstract: MR2500M MR2501M MR2504M
Contextual Info: Looking For MR2500M, MR2501M, MR2502M, MR2504M, MR2506M, MR2508M, MR2510M Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP BUTTON DIODES MECHANICAL SPECIFICATION FEATURES

2501 datasheet

Abstract: MR2500 MR2512 MR2510
Contextual Info: MR2500 - MR2512 AUTOMOTIVE RECTIFIER DIODES MR PRV : 50 - 1200 Volts Io : 25 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 0.342 8.69 0.332 (8.43)

2506L

Abstract: 2501L 2500L MR2500L MR2512L mr 420
Contextual Info: MR2500L - MR2512L AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 25 Amperes D6 FEATURES : * * * * * 1.00 25.4 MIN. 0.360 (9.1) 0.340 (8.6) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: www.eicsemi.com MR2500L - MR2512L AUTOMOTIVE RECTIFIER DIODES PRV : 50 - 1200 Volts Io : 25 Amperes D6 FEATURES : * * * * * 1.00 25.4 MIN. 0.360 (9.1) 0.340 (8.6) High current capability High surge current capability High reliability Low reverse current

TMPZ84C

Abstract: 2 pins crystal oscillator TMPZ84C60P T6497 tokyo denpa
Contextual Info: _ TOSHIBA I N T E G R A T E D CIRCUIT TMPZ84C60P TECHNICAL DATA TMPZ84C60P CMOS Z80 Clock Generator/Controller 1. General Description and Features The TMPZ84C60P is a clock generator/controller for the TLCS-Z80 CMOS Family (Microprocessor (MPU) and its peripheral LSI's) fabricated with

Mallory MR100P

Abstract: MR100P M200P MR600P 1K Linear Taper Pot mallory 170 M500P MR5000P LW100 MR15P
Contextual Info: Type MR - 3 Watt Wirewound Controls Power Rating: Ohms Tolerance: Dielectric Strength: Stop Strength: Operating Torque: Resistance Taper: Mechanical Rotation: Electrical Rotation: Contact Arm: 3 Watts @ 55gC Derate linearly to 0 @ 105gC ȗ20% Standard (Other tolerances available)

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor