1N118 Search Results

1N1189

Abstract: 1S119 1N118U 1N1186 1N1187 1N1188 1S1190 INII83 1J1O
Contextual Info: EDAL INDUSTRIES INC 4SE D 3CH571b 0000272 2bfl IEDL / -~oi t Bv . PIV_ Io .Saa.,Table. o 1?. A, - JM. Is . AMPS Vf _ v @ JHA. @ _ ptv _LjL *r _ 1Q mA C Case @ Jilû. o _C o Case JiáL _C Case o <3 2M STYLE DO-5 STAMP EdaL P/N PIT EQUIV. TO P/ET 1N1183 1N118U

A44E

Abstract: GE A40B 14C40 1N2481 A40E in3900 1N5332 1N1184 1N3899 A44M
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­

1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A

Outline Dimensions

Contextual Info: Outline Dimensions Vishay Semiconductors DO-203AB DO-5 for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) Ø 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) Ø 4.10 (0.16) Ø 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX.

1N3765

Abstract: 1N1183 1N1183A 1N1184A 1N1185A 1N2128A DO-203AB 1N2128
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

Contextual Info: INTER N ATIO NA L SEMICONDUCTOR INC. 1N1183 thru 1N1190R , SILICON POWER RECTIFIERS VO LTAG E 100 to 600 Volts C U R R E N T - 35 Ampere Avg. M E C H A N IC A L C H A R A C T E R IS T IC S B ase Steel stud and base with a %-28 U N F-2A thread for through mounting on a heat sink. Nickel plating

1N1186RA

Abstract: 1N1184 1N1183 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and

1N1190A

Contextual Info: MCC 1N1183A THRU 1N1190A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 40 Amp Rectifier 50 to 600 Volts High Surge Capability Low Leakage Low Forward Voltage Drop

Contextual Info: 1N1186+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

Contextual Info: 1N1186R+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

1N1186

Contextual Info: 1N1186/R asii SILICON RECTIFIER DESCRIPTION: The 1N1186/R R ectifier is Designed fo r G eneral Purpose P ow er Supply A pplications. PACKAGE STYLE DO- 5 • 1N1186 -A n o d e to Case • 1N118R - Cathode to Case MAXIMUM RATINGS Vr w M 200 V Io 35 A avg @ Te $ 1 4 0 OC

Contextual Info: 1N1183A thru 1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Contextual Info: 1N1183A thru 1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features • High Surge Capability • Types up to 600 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N3765

Abstract: 1 J 250 1N1184 1N1183 1N1183A 1N1184A 1N1185 1N1185A 1N1190 1N3768
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765-1N3768 Dim. Inches M illim eter Minimum Maximum Minimum Maximum Notes _ _ .6 8 7 .7 9 3 1.00 .4 5 3 .2 0 0 .4 5 0 .2 4 9 .3 7 5 1 6 .9 5 17 .4 4 2 0 .1 4 2 5 .4 0 11.50 5 .0 8 11.43 6 .3 2 9 .5 2 .6 6 7 .0 8 0

N117

Abstract: 1N126A 1n117 1N1171 1N118 1N118A Germanium Power Diodes "Germanium Diode" Germanium power
Contextual Info: 92D 00409 ¡353303 C E N T R A L O E M I C O N D U C T O R T-Of ~t>l D 1 N 1 17 1N118 1N118A INI c 26 1 NI 26 a GERMANIUM DIODE JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N117, IN118, 1N1I8A, 1N126, 1N126A types are gold bonded germanium diodes mounted in a hermetically sealed .glass case, designed for general purpose applications.

Contextual Info: VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

Contextual Info: 1N118A Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current70m V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)40m I(RM) Max.(A) Reverse Current100u @V(R) (V)(Test Condition)50

Contextual Info: rZ 7 SGS-THOMSON 1N1186 —> 90 Ä 7# [*^® M O T e*S 1N3766 /1 N3768 RECTIFIER DIODES • STANDARD RECTIFIER ■ HIGH SURGE CUR RENT CAPABILITY ■ LOW FORW ARD VOLTAGE DROP ABSOLUTE MAXIMUM RATINGS (limiting values Parameter Value Unit Average forward current *

BROWN BOVERI

Abstract: S3550 1N2131 R3520 1N2131 diode N2135 1N1184A 1N1186A 1N2129 R3510
Contextual Info: BBC BROWN BOVERI «FMC B R O W N , B O V E R I & C IE A K T IE N G E S E L L S C H A F T M A N N H E IM Silicon Power Rectifiers Geschäftsbereich Halbleiter und Stromrichter Telefon 06206 503-1, Telex 04-65727 Postfach 200, D-6840 Lampertheim Series 35

DIODE 1n1183

Abstract: A44E ge company 1N3909-13 1N5332 A40F SCR Handbook, General electric 4JA4 2540 stud diode
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 600 § 500 s z 400 5 300 §H 200 _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 3000 V3 2000

D2103

Abstract: D2101 D1300 S3900SF 1N285 S3900MF D1201P 1N5213 1N538 S3901S
Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550

S3901S

Abstract: S3900SF S3900MF rca thyristor scr 50a to 65 S3903MF 1N3194 SCR 50A S3900S S3901MF
Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW ATT Commutating Retrace 8A 100A 'T (R M S) 'TSM (60 Hz) 400 450 500 550 600 650 700 750 ig t M RCA GTO's 45 4 S3900MF S3900S S3900SF 30 4 ^ a)

BROWN BOVERI

Abstract: N4528 S3480 equivalent n246 1N1184 1N1186 1N2459 R3410 R3420 n2283
Contextual Info: BROWN BOVERI -FMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEIM Silicon Avalanche Power Rectifiers BBC G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 50 3-1 , T elex 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim Series 34

S3901S

Abstract: D1201P 1N538 150a gto 1N539 S3900E 1N5214 S3900S S3900SF S3901M
Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550