1N 4000 DIODE Search Results

5V1 85C

Abstract: bzx 86 c BZX 86c BZ 6V2 1N4189 BZX 24 85C 85C3V3 85c 3v3 85c 5V6 bz-86
Contextual Info: DO 41 CB 101 Types V Z T /l2 T * IV) nom 1N 4 7 6 3 A 1N 4764 A 91 1N4187 B 110 120 100 1N 4188 B 1N 4189 B rZT/»ZT* (n ) max >ZT ImA) 250 350 2,8 3000 0,25 0,09 5 69 10 2,5 2,3 2 0,09 0,10 5 5 76 84 9,4 450 3000 0,25 4000 0,25 4500 0,25 0,10 5 91 8,6 7,8

P200H

Abstract: PH 1n 40 50 20800-3 ir 150h M300K F40H P56H hf80 1n 48 ph
Contextual Info: DIODES DE REDRESSEMENT HAUTE TENSION high voltage rectifier diodes V RWM vF V RRM TYPES 100 JUA min. V VR (V) 200 mA ME ME ME ME ME / tamb = 25°C 20 F 40 F 60 F 80 F 100 F 250 mA 2 0 0 /400 mA EV EV EW EW mA D 40 H D 60 H D 80 H D 150 H D 200 H L D 250 H L

diode IN 5397

Abstract: 1N 5392 DIODE diode in 5392 T3 marking 1N 4000 diode diode 1n5392 diode 1n5397 1N5392-T3 1N5392-TB 1N5399
Contextual Info: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic

diode 1n5397

Abstract: 1N5392
Contextual Info: 1N5391 – 1N5399 WTE POWER SEMICONDUCTORS Pb 1.5A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-15, Molded Plastic

1N2919

Abstract: CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique
Contextual Info: high voltage rectifier diodes o diodes de redressement haute tension THOMSON-CSF Types / T a m il 250 itiA •o Vr r m mA (V) = 50°C M 15 K/1N2887 M 20 K/1N 2891 1N 2897 M 30 K/1N 2901 1N 2905 M 40 K/1 N 2911 1N 2915 M 50 K/1N 2919 1N2921 M 60 K/1 N 2923

Contextual Info: RECTIFIER DIODES, Standard Recovery, Plastic Package ISI P a rt N um ber M axim um R ectified Current at T. Peak in ve rse Voltage I A m ps i f i l i Ptv (Veits) Average 1194001 50 1N 4002 100 4N 4003 200 1N 4004 400 75 1194000 600 1N 4006 800 i „ « (A m ps)

M605

Abstract: 100-C IN3283 BAY25 me120
Contextual Info: DIODES DE REDRESSEMENT HAUTE TENSION , high voltage rectifier diodes 41 10 m A / ta m b = 25°C t vj = •f r m (mA) 125° C fi 'o (A) C„ = > > Vra @ 100 fiA min. (V) o “H > TYPES Ir vF = 'o *amb — ' 25°C (V) 2 pF ( 0 V) <É- W @ if Vr Vr *amb 100-C

IN3029B

Abstract: IN3036 4170B zener diodes 1N serie 1N4164 IN3037B 1N4171 IN3016B IN3048B IN3029
Contextual Info: DIODES DE RÉGULATION DE TENSION , zener diodes Ps TYPES 1w / 1N 4158 B 1 N 4159 B 1N 4160 B 1N 4161 B 1N 4162 B 1 N 4163 B 1N 4164 B 1N 4165B 1N 4166 B 1N 4167B 1N 4168 B 1N 4169 B 1N4170B 1N4171 B 1N 4172 B 1N 4173B 1N 4174 B 1N 4175B 1N4176B 1N 4177B 1N 4178B

Contextual Info: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.

1N4148

Abstract: 4148
Contextual Info: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.

pa 3029 b

Abstract: b3436 1N3019B 1N3027 1N3026B 1N3041
Contextual Info: s 7 SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MDÊ^OIILiKginSQIfülOtgi ZENER DIODES STANDARD ZENER DIODES Type rZT'IZT* V Z T 'IZ T * rZK 1 >ZK 'ZT* “ VZ •r ' v R VR •ZM V (mA) P ackage Tam b 25° C min nom max (ß) (V) 1W / Tamb 1N 3016 B 1N 3017 B

4742A

Abstract: 4735 zener zener 4733 4732A 4739A 4749A 4731A 1N4187
Contextual Info: o zener diodes diodes zener THOMSON-CSF Types Vzr/IZT* rZT/l2T* nom V max A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A B B B B B B B 3,3 3,6 3,9 4,3 4,7 5,1 5,6 6,2 6,8 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39

1N4739

Abstract: zener 4733 1N4189 4742A SGS-THOMSON ZENER DIODES
Contextual Info: n Z Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M Q » [i[L [E g ? [M « S ZENER DIODES STANDARD ZENER DIODES Type 1 W VZT ' 'ZT* rZ T 'IZ T * nom max (V) (0) 'ZT* rZK 1 'ZK max (mA) (O) typ (10«/°C) 1 Tamb = 50°C Tj max = 200°C P 1N 4728 A 1N 4729 A

zener IN 5232

Abstract: 2SA 5242 5234 IN5221B IN5221
Contextual Info: zener diodes diodes zener Typo« THOMSON-CSF VZT/'ZT* nom V 500 mW IN 5221 B 1N 5222 B 1N 5223 B 1N 5224 B 1N 5225 B 1N 5226 B 1N 5227 B 1N 5228 B 1N 5229 B 1N 5230 B 1N 5231 B 1N 5232 B 1N 5233 B 1N 5234 B 1N 5235 B 1N 5236 B 1N 5237 B 1N 5238 B 1N 5239 B

zener diodes 1N serie

Abstract: 957b IN981B bzx96 IN4370 1N4371 bzx 96 ZENER bzx 46 c 20 969B ZENER bzx 46 c
Contextual Info: zener diodes diodes zener Types v z t / iz t * nom V THOMSON-CSF 'ZT/IZT* >ZT max Ci) Im AI rZK / IZK max (0) (mA) 400 m W / Tam b = 50°C Tj m ax = 175°C 1N 4370 1N4371 1N 4372 1N 746 1N 747 1N 748 1N 749 1N 750 1N 751 1N 752 1N 753 1N 754 1N 755 1N 756

tt 3043

Abstract: TT 3034 zener diodes 1N serie 1N3022
Contextual Info: zener diodes THOMSON-CSF diodes zener Types vzt m in 1w / / 'z t nom V »ZT/'ZT m ax 'Z T m ax «2) Im A ) m ax C2) 3,3 3,1 3,4 3,6 3,7 3,9 4,0 4,3 4,4 4,7 4,8 5,1 5,2 5,6 5,8 6,2 6.4 6,8 7,0 7,5 7,7 8,2 8,5 9,1 10 9,4 10,4 11 12 11,4 12,4 13 13,8 15 15,3

E80F

Abstract: MINI-MELF DIODE RED CATHODE
Contextual Info: SCHOTTKY DIODES PACKAGING Quantity per rac. or box Buffix following standard part number Packing Leade DO 35 DO 41 53 mm e xlaj reel No standard execution 4000 3000 26 mm axial Am m opack box — B2 4000 3000 reel — AR 2 (cathode up) — AR 1 (cathode down)

diode 4483

Abstract: 1N4471
Contextual Info: 1 N 4 4 6 0 thru 1N4496 and N 6 4 8 5 thru ^ 1 Micmemi Corp. / J SANTA ANA, CA For more information call: 714 979-8220 The diode experts SCOTTSDALE, AZ ☆JANS* 1.5 WATT GLASS ZENER DIODES FE A T U R E S • • • • • • • • M ic ro m in iatu re p ack age.

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

zener IN 5232

Abstract: 5277A 1N52658
Contextual Info: C T SGS-THOMSON *7 # GENERAL PURPOSE & INDUSTRIAL m m ì& jè w w è s ZENER DIODES PREFERRED SERIES JEDEC SERIES Type STANDARD ZENER DIODES Vz t ' I z t * rZT 1 *2T* 'Z T * rZK 1 'Z K Ir ' V r “ VZ Vr Tam b 25 °C 500 mW / nom m ax V (O) Tgirij) — 75°C Tj max

4493U

Abstract: 1N4471
Contextual Info: Square ended SMD 1N4464US thru 1N4496US Applications 1.5 watt Voidless Zeners Hard GlassTungsten MELF "A” Package For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These zener diodes are ideal for

IN3046

Abstract: 1N3016 1N3040 1N3029B 1N3042 1n3029
Contextual Info: f Z 7 SGSTHOMSON ^ 7# [ M » i L i O T ( « ( 5S 1 N 3 0 1 6 B -> 1N 3051 B ZENER DIODES • VOLTAGE RANGE : 6.8V TO 200V ■ WELDED, HERMETICALLY SEALED METAL CASE ■ PACKAGE ACCORDING TO NORMALIZATION CCTU : F61 AND JEDEC DO-13 DESCRIPTIO N 1W silicon Zener diodes.

IN3016

Contextual Info: SbE D rz 7 • 7 CÌ2 CÌ237 0 0 m S 2 tï bfl? ■ S G T H S G S -T H O M S O N _I L I M « ! 1 N 3 0 1 6 B~>1N 3051 B S G S-TH0HS0N ZENER DIODES ■ VOLTAGE RANGE : 6.8V TO 200V ■ WELDED, HERMETICALLY SEALED METAL CASE ■ PACKAGE ACCORDING TO NORMALIZATION

Contextual Info: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 M¡erosemi Corp. j ' The dtOOe experts SCOTTSDALE, 4 / ☆JANS^ 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • M ic ro m in ia tu re packag e. H ig h p e rfo rm a n c e characteristics. S ta b le o p era tio n at te m p e ra tu re s to 2 0 0 ° C .